W9812G6IH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 2M words × 4 banks × 16 bits. W9812G6IH delivers a data bandwidth of up to 200M words per second (-5). For different application, W9812G6IH is sorted into the following speed grades: -5/-6/-6C and -75. The –5 is compliant to the 200MHz/CL3 specification. The –6/-6C/-6I is compliant to the 166MHz/CL3 specification (the -6I grade which is guaranteed to support -40°C ~ 85°C). The -75 is compliant to the 133MHz/CL3 specification.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9812G6IH is ideal for main memory in high performance applications.

*3.3V ± 0.3V Power Supply
*Up to 200 MHz Clock Frequency
*2,097,152 Words × 4 banks × 16 bits organization
*Self Refresh Mode
*CAS Latency: 2 and 3
*Burst Length: 1, 2, 4, 8 and full page
*Burst Read, Single Writes Mode
*Byte Data Controlled by LDQM, UDQM
*Auto-precharge and Controlled Precharge
*4K Refresh cycles / 64 mS
*Interface: LVTTL
*Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant

W9812G6IH-5, W9812G6IH-6, W9812G6IH-6C, W9812G6IH-6I, W9812G6IH-75

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