Description
The AFP02N8-212, 213 are general purpose packaged PHEMT chips that have excellent gain and noise performance through X band, making them suitable for a wide range of commercial applications. The devices employ 0.7 mm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable part. Available in metal ceramic packages with a choice of two lead lengths. The
components are also available in tape and reel and are ready for automatic insertion equipment.

Features
*Low Noise Figure, 1.55 dB @ 4 GHz
*High Associated Gain, 13 dB @ 4 GHz
*High MAG, > 15 dB @ 4 GHz
*0.7 mm Ti/Pd/Au Gates
*Passivated Surface
*Low Cost Metal Ceramic Package
*Available with Two Lead Lengths
*Available in Tape and Reel Packaging

AFP02N8-213
TAG Chips, pHEMT

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Product Description
Sirenza Microdevices’ SUF-6000 is a high gain broadband 2-stage amplifier covering 2-16 GHz for wideband communication and general purpose applications. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5V supply. Its compact size make it ideal for high-density multi-chip module applications.

Product Features
*Broadband Performance
*High Gain = 17.4 dB @ 14 GHz
*P1dB = 12.0 dBm @ 14 GHz
*IP3 = 24.9 dBm @ 14 GHz
*5V Operation, No Dropping Resistor
*Low Gain Variation vs. Temperature
*Patented Thermal Design
*Patented Self-Bias Darlington Circuit

Applications
*Broadband Communications
*Test Instrumentation
*Military & Space
*LO and IF Mixer Applications
*High IP3 RF Driver Applications

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Description
Mimix's pHEMT technology is tested and proven in military, space and commercial applications. Mimix's proven workhorse, the CF001-03, is now available in packaged form as the CFS0103-SB.
The CFS0103-SB is a high dynamic range, low noise, pHEMT packaged in a 4-lead SOT-343 surface mount plastic package. It is intended for many applications operating in the 0.1 GHz to 10 GHz frequency range.
Mimix's high performance packaged pHEMTs are ideal for use in all applications where low noise figure, high gain, medium power and good intercept is required. The CFS0103-SB is the perfect solution for the first or second stage of a base station LNA due to the excellent combination of low noise figure and linearity. It is also well suited as a medium power driver stage in pole-top amplifiers and other transmit functions, particularly as the low thermal resistance allows extended power dissipation when voltage and current are adjusted for increased power and linearity.

Features
*AIGaAs/InGaAs/AIGaAs Pseudomorphic High Electron Mobility Transistor (pHEMT)
*High Dynamic Range
*Low Current and Voltage
*Bias Point 3V and 40 mA
*0.4 dB Noise Figure at 2 GHz
*16 dBm P1dB at 2 GHz
*26 dBm OIP3 at 2 GHz
*300 m Gate Width
*Excellent Uniformity
*Low-Cost, Surface-Mount Package (SOT-343)
*RoHS Compliant Construction
*Low Thermal Resistance: 170ºC/W

Applications
*Low Noise Amplifiers and Oscillators Operating over the RF and Microwave Frequency Ranges
*Cellular/PCS/GSM/W-CDMA
*Mobile Handsets, Base Station Receivers and Tower-Mount Amplifiers
*Wimax, WLAN, LEO, GEO, WLL/RLL, GPS and MMDS Applications
*General Purpose Discrete pHEMT for Other Ultra Low-Noise and Medium Power Applications

CFS0103-SB-0G00, CFS0103-SB-0G0T, PB-CFS0103-SB-00A0

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Description
Mimix's pHEMT technology is tested and proven in military, space and commercial applications. Mimix's proven workhorse, the CF003-03, has been fabricated in the Company's in-house foundry for over 19 years and is now available in packaged form as the CFS0303-SB.
The CFS0303-SB is a high dynamic range, lownoise, pHEMT packaged in a 4-lead SOT-343 surface-mount plastic package. It is intended for many applications operating in the 0.1GHz to 10GHz frequency range.
Mimix's high performance packaged pHEMTs are ideal for use in all applications where low-noise figure, high gain, medium power and good intercept is required. The CFS0303-SB is the perfect solution for the first or second stage of a base station LNA due to the excellent combination of low-noise figure and linearity. It is also well suited as a medium power driver stage in pole-top amplifiers and other transmit functions, particularly as the low thermal resistance allows extended power dissipation when voltage and current are adjusted for increased power and linearity.

Features
*AIGaAs/InGaAs/AIGaAs Pseudomorphic High Electron Mobility Transistor (pHEMT)
*High Dynamic Range
*Low Current and Voltage
*Bias Point 3V and 60 mA
*0.3 dB Noise Figure at 2 GHz
*17 dBm P1dB at 2 GHz
*33 dBm OIP3 at 2 GHz
*600 m Gate Width: 50 Output Impedance
*Excellent Uniformity
*Low-Cost, Surface-Mount Package (SOT-343)
*Ro-HS Compliant Construction
*Low Thermal Resistance: 98ºC/W

Applications
*Low Noise Amplifiers and Oscillators Operating over the RF and Microwave Frequency Ranges
*Cellular/PCS/GSM/W-CDMA
*Mobile Handsets, Base Station Receivers and Tower-Mount Amplifiers
*Wimax, WLAN, LEO, GEO, WLL/RLL, GPS and MMDS Applications
*General Purpose Discrete pHEMT for Other Ultra Low-Noise and Medium Power Applications

CFS0303-SB-0G00, CFS0303-SB-0G0T

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