PRODUCT DESCRIPTION
The SST39WF400A device is a 256K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39WF400A writes (Program or Erase) with a 1.65-1.95V power supply. This device conforms to JEDEC standard pin assignments for x16 memories.
Featuring high-performance Word-Program, the SST39WF400A device provides a typical Word-Program time of 28 μsec. The device uses Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation. To protect against inadvertent writes, it has on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, this device is offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years.
The SST39WF400A device is suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, it significantly improves performance and reliability, while lowering power consumption. It inherently uses less energy during Erase and Program than alternative flash technologies. When programming a flash device, the total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles.
To meet surface mount requirements, the SST39WF400A is offered in both a 48-ball TFBGA package and 48-ball Micro-Packages. See Figures 1 and 2 for pin assignments.

FEATURES
*Organized as 256K x16
*Single Voltage Read and Write Operations
– 1.65-1.95V
*Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
*Low Power Consumption (typical values at 5 MHz)
– Active Current: 5 mA (typical)
– Standby Current: 1 μA (typical)
*Sector-Erase Capability
– Uniform 2 KWord sectors
*Block-Erase Capability
– Uniform 32 KWord blocks
*Fast Read Access Time
– 90 ns
– 100 ns
*Latched Address and Data
*Fast Erase and Word-Program
– Sector-Erase Time: 36 ms (typical)
– Block-Erase Time: 36 ms (typical)
– Chip-Erase Time: 140 ms (typical)
– Word-Program Time: 28 μs (typical)
*Automatic Write Timing
– Internal VPP Generation
*End-of-Write Detection
– Toggle Bit
– Data# Polling
*CMOS I/O Compatibility
*JEDEC Standard
– Flash EEPROM Pinouts and command sets
*Packages Available
– 48-ball TFBGA (6mm x 8mm)
– 48-ball WFBGA (4mm x 6mm) Micro-Package
– 48-bump XFLGA (4mm x 6mm) Micro-Package

SST39WF400A-90-4C-B3K, SST39WF400A-90-4C-B3KE

Trackback :: http://datasheetblog.com/trackback/2250

댓글을 달아 주세요 Comment

PRODUCT DESCRIPTION
The SST39WF800A device is a 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology.
The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
The SST39WF800A writes (Program or Erase) with a 1.65-1.95V power supply.
This device conforms to JEDEC standard pin assignments for x16 memories.
Featuring high-performance Word-Program, the SST39WF800A device provides a typical Word-Program time of 28 μsec.
The device uses Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation.
To protect against inadvertent writes, it has on-chip hardware and software data protection schemes.
Designed, manufactured, and tested for a wide spectrum of applications, this device is offered with a guaranteed typical endurance of 100,000 cycles.
Data retention is rated at greater than 100 years.
The SST39WF800A device is suited for applications that require convenient and economical updating of program, configuration, or data memory.
For all system applications, it significantly improves performance and reliability, while lowering power consumption.
It inherently uses less energy during Erase and Program than alternative flash technologies.
When programming a flash device, the total energy consumed is a function of the applied voltage, current, and time of application.
Since for any given voltage range, the SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies.
These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred.
Therefore the system software or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles.
To meet surface mount requirements, the SST39WF800A is offered in a 48-ball TFBGA package and a 48-ball Micro- Package.

FEATURES
* Organized as 512K x16
* Single Voltage Read and Write Operations
- 1.65-1.95V
* Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
* Low Power Consumption (typical values at 5 MHz)
- Active Current: 5 mA (typical)
- Standby Current: 5 μA (typical)
* Sector-Erase Capability
- Uniform 2 KWord sectors
* Block-Erase Capability
- Uniform 32 KWord blocks
* Fast Read Access Time
- 90 ns
* Latched Address and Data
* Fast Erase and Word-Program
- Sector-Erase Time: 36 ms (typical)
- Block-Erase Time: 36 ms (typical)
- Chip-Erase Time: 140 ms (typical)
- Word-Program Time: 28 μs (typical)
* Automatic Write Timing
- Internal VPP Generation
* End-of-Write Detection
- Toggle Bit
- Data# Polling
* CMOS I/O Compatibility
* JEDEC Standard
- Flash EEPROM Pinouts and command sets
* Packages Available
- 48-ball TFBGA (6mm x 8mm)
- 48-ball WFBGA (4mm x 6mm) Micro-Package
- 48-ball WFBGA (5mm x 6mm) Micro-Package
- 48-ball XFLGA (5mm x 6mm) Micro-Package
* All non-Pb (lead-free) devices are RoHS compliant

Trackback :: http://datasheetblog.com/trackback/1746

댓글을 달아 주세요 Comment