Description
The M29W800F is available as known good dice.
Numonyx defines known good dice as standard products offered as dice and tested for functionality and speed. Numonyx's known good die products are as reliable and of the same quality as products delivered in packages.
This datasheet describes the features specific to parts sold as known good dice. It should be read in conjunction with the M29W800F datasheet that detailfully describes the device operation. The M29W800F datasheet is available from the Numonyx website: www.numonyx.com.
The M29W800FB-KGD is a 8-Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a single-word basis using a 2.7 V to 3.6 V. On power-up the memory defaults to its read mode where it can be read in the same way as a ROM or EPROM.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental program or erase commands from modifying the memory. Program and erase commands are written to the command interface of the memory. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.
The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
The blocks in the memory are asymmetrically arranged. The first or last 64 Kbytes have been divided into four additional blocks. The 16-Kbyte boot block can be used for small initialization code to start the microprocessor, the two 8-Kbyte parameter blocks can be used for parameter storage and the remaining 32-Kbyte is a small main block where the application may be stored.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic.

Features
*Supply voltage
–VCC = 2.7 V to 3.6 V for program, erase and read
*Access times: 90 ns
*Programming time
–10 μs per byte/word typical
*19 memory blocks
-1 boot block (top or bottom location)
–2 parameter and 16 main blocks
*Program/erase controller
– Embedded byte/word program algorithms
*Erase suspend and resume modes
– Read and program another block during erase suspend
*Unlock bypass program command
– Faster production/batch programming
*Temporary block unprotection mode
*Common flash interface
-64-bit security code
*Low power consumption
-Standby and automatic standby
*100,000 program/erase cycles per block
*Electronic signature
-Manufacturer code: 0020h
-Bottom device code M29W800FB: 225Bh

M29W800FB9D11

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