DESCRIPTION
The NEZ1011-3E and NEZ1414-3E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 W external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The device incorporates a WSi (tungsten silicide) gate structure for high reliability.

FEATURES
*High Output Power : Po (1 dB) = +34.0 dBm typ.
*High Linear Gain : 8.5 dB typ. (NEZ1011-3E), 7.5 dB typ. (NEZ1414-3E)
*High Efficiency : 30 % typ.
*Input and Output Internally Matched for Optimum performance

NEZ1414-3E
TAG band, GaAs, Power

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DESCRIPTION
 The TK10931V is an IF system IC designed for communications equipment.
The TK10931V contains the following functions:
Oscillator
Mixer
FM IF Limiter
Quadrature Detector
AM AGC Amplifier
Squelch Noise Amplifier
AM Detector
Squelch Rectifier
RSSI Output
RF AGC Output
Squelch Comparator
The TK10931V is suited for Amateur radios, CB radios, and Wide-Band receivers.
The TK10931V is available in the very small TSSOP-24 surface mount package.

FEATURES
* Simultaneous Operation (AM Section, FM Section)
* AM Section with ON/OFF Control Input
* AGC Amplifier Control Input
* AGC Amplifier Output
* High-speed FM Limiter Amplifier (Up to 11 MHz)
* RF AGC Output (for External RF Amplifier)
* Built-in Noise Squelch Circuit (Noise Amplifier, Rectifier, Comparator)
* Wide Range Voltage Operation (2.5 V to 8.5 V)
* Very Small Package (TSSOP-24)

APPLICATIONS
* Amateur Radios
* CB Radios
* Utility Radios
* Scanner Receivers

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Features
· Operation on 434.075, 868.40 and 914.5 MHz
· X2011 version includes integrated pcb loop antenna (434 & 868 MHz versions)
· Double RF filtering = High Reliability RF Link
· Data rates to 20 kbps (Wide-band 64 kbps version available to order)
· -112 dBm receiver sensitivity (434 version)
· CD and RSSI outputs
· Crystal stabilised accurate RF, hence narrower BW filter utilised
· Results in over 300m range
· EN 300 220-1, 300 683 & FCC compliant
· Immune to Tetra and High power Radio Amateur Repeater Stations

Applications
· EPOS Terminals
· Wireless Networking
· Domestic And Commercial Wireless Security Systems
· Panic Attack Facility
· Remote Control For Cranes Etc

General Description
The X2010 radio transceiver module was designed to provide reliable wireless operation at
moderate data rates for use throughout the world.
Its unique features of narrower RF channel bandwidths and hence high interference rejection
capability at SAW module prices make the X2010 the ideal choice for next generation applications.
Available at several frequency options, these modules have been designed to provide a reliable
wire free link within the presence of other interference at the same frequency, accounting for
the increased traffic from other legal users of the radio spectrum.
The transmitter section uses a PLL design that utilises a highly stable and accurate reference
crystal oscillator.
This results in a RF transmission tightly controlled in its frequency spread and over its operating temperature range.
This is exploited in the receiver design.
The receiver section uses a single conversion super-het design, again using PLL technology.
Hence narrower bandwidth RF filters are utilised which result in superior rejection of interference as well as providing good receiver sensitivity and hence range.

X2011
X2011-868
X2010-915

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DESCRIPTION
The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 4W (TYP.) @ f=7.1~7.7GHz
High power gain
GLP = 9 dB (TYP.) @ f=7.1~7.7GHz
High power added efficiency
P.A.E. = 30 % (TYP.) @ f=7.1~7.7GHz
Low distortion [ item -51 ]
IM3= -45 dBc(TYP.) @Po=25dBm S.C.L.

APPLICATION
item 01 : 7.1~7.7 GHz band power amplifier
item 51 : 7.1~7.7 GHz band digital radio communication

QUALITY GRADE
IG

RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 1.2 (A) Refer to Bias Procedure
RG= 100 (ohm)
TAG band, Internal

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FEATURES
• LOW VOLTAGE OPERATION: VDD1 = VDD2 = 3.0 V, fRF = 889 to 960 MHz @ POUT = +8 dBm
• LOW DISTORTION: PADJ1 = 60 dBc TYP @ VDD = 3.0 V, POUT = +8 dBm, VAGC = 2.5 V
• LOW CURRENT OPERATION : IDD = 25 mA TYP @ VDD = 3.0 V, POUT = +8 dBm, VAGC = 2.5 V
• EXTERNAL INPUT AND OUTPUT MATCHING
• VARIABLE GAIN CONTROL FUNCTION : G = 40 dB TYP @ VAGC = 0.5 to 2.5 V
• 6 PIN SUPER MINI-MOLD PACKAGE

DESCRIPTION
NEC's UPG2106TB is a GaAs MMIC for PA driver amplifiers with variable gain functions which was developed for L-band applications. The device can operate with 3.0 V, having high gain and low distortion.

APPLICATION
• CELLULAR HANDSETS AND OTHER PORTABLE

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