Product Description
The following specification defines an SPDT (single pole double throw) switch for use in cellular and other wireless applications. The PE42510A uses Peregrine’s UltraCMOS™ process and it also features HaRP™ technology enhancements to deliver high linearity and exceptional harmonics performance. HaRP™ technology is an innovative feature of the UltraCMOS™ process providing upgraded linearity performance.
The PE42510A is manufactured on Peregrine’s UltraCMOS™ process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS.

Features
*No blocking capacitors required
*50 Watt P1dB compression point
*10 Watts <8:1 VSWR (Normal Operation)
*29 dB Isolation @800 MHz
*< 0.3 dB Insertion Loss at 800 MHz
*2fo and 3fo < -84 dBc @ 42.5 dBm
*ESD rugged to 2.0 kV HBM
*32-lead 5x5 mm QFN package

PE42510AMLI, PE42510AMLI-Z, EK42510-01

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Product Description
The PE42641 is a HaRP™-enhanced SP4T RF Switch developed on the UltraCMOS™ process technology. This switch contains 4 identical WEDGE/CDMA compliant TX paths and can be used in various GSM and WCDMA mobile applications as well as other wireless applications up to 3000MHz. It is also suitable for antenna band switching and switchable matching networks for cellular and non-cellular mobile applications. It integrates on-board CMOS control logic with a low voltage CMOS-compatible control interface and requires no DC blocking capacitors. This RoHS-compliant part is available in a standard 3x3x0.75mm QFN package.
Peregrine’s HaRP™ technology enhancements deliver high linearity and exceptional harmonics performance. It is an innovative feature of the UltraCMOS™ process, providing performance superior to GaAs with the economy and integration of conventional CMOS.

Features
*Symmetric, High-Power SP4T: All ports WEDGE/CDMA-Compliant
*Very Low Insertion Loss: 0.45 dB @ 1000 MHz, 0.6 dB @ 2000 MHz
*HaRPTM - enhanced Technology for Unparalleled Linearity
-Low harmonics of 2fo = -86 dBc and 3fo = -81 dBc at +35 dBm
-IMD3 of -110 dBm at WCDMA Band I
-IIP3 of +68 dBm
*Very high isolation: 35 dB @ 900 MHz, 29 dB @ 1900 MHz
*Exceptionally high ESD tolerance:
-Class 3 (4.0 kV HBM) on ANT pin
-Class 2 (2.0 kV HBM) on all pins
*Integrated decoder for 2-pin control
-Accepts 1.8 V and 2.75 V levels
*Low 4.5 ohm series ON resistance
*No blocking capacitors required

EK-42641-01, PE42641MLI, PE42641MLI-Z

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Product Description
The PE4259 UltraCMOS™ RF Switch is designed to cover a broad range of applications from near DC through 3000 MHz.
This reflective switch integrates on-board CMOS control logic with a low voltage CMOS-compatible control interface, and can be controlled using either single-pin or complementary control inputs. Using a nominal +3-volt power supply voltage, a typical input 1 dB compression point of +33.5 dBm can be achieved.
The PE4259 SPDT High Power UltraCMOS™ RF Switch is manufactured in Peregrine’s patented Ultra Thin Silicon UTSi®) CMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.

Features
*Single-pin or complementary CMOS logic control inputs
*Low insertion loss: 0.35 dB at 1000 MHz, 0.5 dB at 2000 MHz
*Isolation of 30 dB at 1000 MHz, 20 dB at 2000 MHz
*Typical input 1 dB compression point of +33.5 dBm
*Ultra-small SC-70 package

4259-01, 4259-02, 4259-00, 4259-51, 4259-52

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Product Description
The PE3501 is a high-performance dynamic UltraCMOS™ prescaler with a fixed divide ratio of 2. Its operating frequency range is 400 MHz to 3.5 GHz. The PE3501 operates on a nominal 3 V supply and draws only 12 mA. It is packaged in a small 8-lead TSSOP and is ideal for frequency scaling and microwave PLL synthesis solutions.
The PE3501 is manufactured on Peregrine’s UltraCMOS™ process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance
of GaAs with the economy and integration of conventional CMOS.

Features
*High-frequency operation: 400 MHz to 3500 MHz
*Fixed divide ratio of 2
*Low-power operation: 12 mA typical @ 3 V
*Small package: 8-lead TSSOP
*Low cost

3501-51, 3501-52, 3501-00

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