DESCRIPTION
The Simtek STK10C48 is a fast static RAM with a nonvolatile element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in the Nonvolatile Elements. Data may easily be transferred from the SRAM to the Nonvolatile Elements (the STORE operation), or from the Nonvolatile Elements to the SRAM (the RECALL operation), using the NE pin. Transfers from the Nonvolatile Elements to the SRAM (the RECALL operation) also take place automatically on restoration of power. The STK10C48combines the high performance and ease of use of a fast SRAM with nonvolatile data integrity.
The STK10C48 features industry-standard pinout for nonvolatile RAMs.

FEATURES
*25ns, 35ns and 45ns Access Times
*STORE to Nonvolatile Elements Initiated by Hardware
*RECALL to SRAM Initiated by Hardware or Power Restore
*Automatic STORE Timing
*10mA Typical ICC at 200ns Cycle Time
*Unlimited READ, WRITE and RECALL Cycles
*1,000,000 STORE Cycles to Nonvolatile Elements
*100-Year Data Retention over Full Industrial Temperature Range
*Commercial and Industrial Temperatures
*28-Pin 300 mil PDIP, 300 mil SOIC and 350 mil SOIC Packages

STK10C48-PF25I, STK10C48-NF25I, STK10C48-SF25I, STK10C48-P25I

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GENERAL DESCRIPTION
The 32K x 8 High Temperature Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s HTMOS™ technology, and is designed for use in systems operating in severe high temperature environments.
The RAM requires only a single 5 V ± 10% power supply and has CMOS compatible I/O. Power consumption is typically less than 30 mW/MHz in operation, and less than 10 mW when de-selected. The RAM read operation is fully asynchronous, with an associated typical access time of
50 ns at 5 V.
The RAM provides guaranteed performance over the full -55 to +225°C temperature range. Typically, parts will operate up to +300°C for a year, with derated performance. All parts are burned in at 250°C to eliminate infant mortality.

FEATURES
*Specified Over -55 to +225°C
*Fabricated with HTMOS™ IV Silicon on Insulator (SOI)
*Read/Write Cycle Times £ 50 ns Support 20 MHz Clock
*Asynchronous Operation
*CMOS Input/Output Buffers
*Single 5 V ± 10% Power Supply
*Hermetic 28-Lead Ceramic DIP

APPLICATONS
*Down-Hole Oil Well
*Avionics
*Turbine Engine Control
*Industrial Process Control
*Nuclear Reactor
*Electric Power Conversion
*Heavy Duty Internal Combustion Engines

HT6256DC, HT6256DB

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DESCRIPTION
The Simtek STK10C68 is a fast static RAM with a nonvolatile element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in Nonvolatile Elements. Data may easily be transferred from the SRAM to the Nonvolatile Elements (the STORE operation), or from the Nonvolatile Elements to the SRAM(the RECALL operation), using the NE pin. Transfers from the Nonvolatile Elements to the SRAM (the RECALL operation) also take place automatically on restoration of power. The STK10C68 combines the high performance and ease of use of a fast SRAM with nonvolatile data integrity.
The STK10C68 features industry-standard pinout for nonvolatile RAMs. MIL-STD-883 and Standard Military Drawing (SMD #5962-93056) devices are available.

FEATURES
*25ns, 35ns, 45ns and 55ns Access Times
*STORE to Nonvolatile Elements Initiated by Hardware
*RECALL to SRAM Initiated by Hardware or Power Restore
*Automatic STORE Timing
*10mA Typical ICC at 200ns Cycle Time
*Unlimited READ, WRITE and RECALL Cycles
*1,000,000 STORE Cycles to Nonvolatile Elements (Industrial/Commercial)
*100-Year Data Retention (Industrial/Commercial)
*Commercial, Industrial and Military Temperatures
*28-Pin DIP, SOIC and LCC Packages

STK10C68-5PF25M, STK10C68-PF25M, STK10C68-5SF25M, STK10C68-SF25M

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DESCRIPTION
The STK25C48 is a fast SRAM with a nonvolatile element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in the Nonvolatile Elements. Data transfers from the SRAM to the Nonvolatile Elements (the STORE operation) can take place automatically on power down using charge stored in system capacitance. Transfers from the Nonvolatile Elements to the SRAM (the RECALL operation) take place automatically on restoration of power. The nvSRAM can be used in place of existing 2K x 8 SRAMs and also matches the pinout of 2K x 8 battery-backed SRAMs, EPROMs and EEPROMs, allowing direct substitution while enhancing performance. No support circuitry is required for microprocessor interfacing.

FEATURES
*Nonvolatile Storage without Battery Problems
*Directly Replaces 2K x 8 Static RAM, Battery- Backed RAM or EEPROMs
*25ns, 35ns and 45ns Access Times
*STORE to Nonvolatile Elements Initiated by AutoStore™ on Power Down
*RECALL to SRAM Initiated by Power Restore
*10mA Typical ICC at 200ns Cycle Time
*Unlimited READ, WRITE and RECALL Cycles
*1,000,000 STORE Cycles to Nonvolatile Elements
*100-Year Data Retention over Full Industrial Temperature Range
*Commercial and Industrial Temperatures
*24-Pin 600 PDIP Package

STK22C48-WF25I, STK22C48-W25I, STK22C48-WF45I, STK22C48-W45I

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DESCRIPTION
The Simtek STK16CA8 is a fast static RAM with a nonvolatile element in each static memory cell. The embedded nonvolatile elements incorporate Simtek’s QuantumTrap™ technology producing the world’s most reliable nonvolatile memory. The SRAM provides unlimited read and write cycles, while independent, nonvolatile data resides in the nonvolatile elements. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) can take place automatically on power down or under software control. An internal capacitor guarantees the STORE operation, even under extreme power-down slew rates or loss of power from “hot swapping”. Transfers from the nonvolatile elements to the SRAM (the RECALL operation) take place automatically on restoration of power. Initiation of STORE and RECALL cycles can also be controlled by entering control sequences on the SRAM inputs. The STK16CA8 is pin-compatible with 128k x 8 SRAMs and batterybacked SRAMs, allowing direct substitution while providing superior performance.

FEATURES
*25ns, 35ns and 45ns Access Times
*Directly Replaces 128K x 8 Static RAM, Battery-Backed RAM or EEPROM
*Transparent Data Save on Power Down
*STORE to QuantumTrap™ Nonvolatile Elements is Initiated by Software or AutoStore-Plus™on Power Down
*RECALL to SRAM Initiated by Software or Power Restore
*5mA Typical ICC at 200ns Cycle Time
*Unlimited READ and WRITE Cycles to SRAM
*100-Year Data Retention to Quantum Trap
*Single 3V +20%, -10% Operation
*Commercial and Industrial Temperatures
*32-Pin DIP Package

STK16CA8-WF45I, STK16CA8-W45I, STK16CA8-WF35I, STK16CA8-W35I

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Description
The Hitachi HM628512 is a 4-Mbit static RAM organized 512-kword ´ 8-bit. It realizes igher density, higher performance and low power consumption by employing 0.5 mm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is available for high density mounting. LP-version is suitable for battery backup system.

Features
*High speed: Fast access time:
-55/65/70 ns (max)
*Low power
-Standby: 10 mW (typ) (L/L-SL version)
-Operation: 75 mW (typ) (f = 1 MHz)
*Single 5 V supply
*Completely static memory No clock or timing strobe required
*Equal access and cycle times
*Common data input and output: Three state output
*Directly TTL compatible: All inputs and outputs
*Capability of battery backup operation (L/L-SL version)

HM628512P-5, HM628512P-7, HM628512LP-5, HM628512LP-7A, HM628512LP-7

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GENERAL DESCRIPTION
The K6T2008V2A and K6T2008U2A families are fabricated by SAMSUNG¢s advanced CMOS process technology. The family support various operating temperature ranges and have various package types for user flexibility of system design. The family also support low data retention voltage for battery backup operation with low data retention current.

FEATURES
*Process Technology: TFT
*Organization: 256Kx8
*Power Supply Voltage
-K6T2008V2A Family: 3.0V~3.6V
-K6T2008U2A Family: 2.7V~3.3V
*Low Data Retention Voltage: 2V(Min)
*Three State Outputs
*Package Type: 32-TSOP1-0820F, 32-TSOP1-0813.4F 48-FBGA-6.00x7.00

K6T2008V2A-B, K6T2008U2A-B, K6T2008V2A-F, K6T2008U2A-F

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