*Schottky Barrier Chip
*Ideally Suited for Automatic Assembly
*Low Power Loss, High Efficiency
*Surge Overload Rating to 100A Peak
*For Use in Low Voltage Application
*Guard Ring Die Construction
*Plastic Case Material has UL Flammability Classification Rating 94V-O

Mechanical Data
*Case: SMA/DO-214AC, Molded Plastic
*erminals: Solder Plated, Solderable per MIL-STD-750, Method 2026
*Polarity: Cathode Band or Cathode Notch
*Marking: Type Number
*Weight: 0.064 grams (approx.)
*Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4

SX32-T3, SX33-T3, SX34-T3, SX35-T3, SX36-T3, SX38-T3, SX39-T3, SX310-T3

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Alpha’s product line of silicon Schottky diode chips are intended for use as detector and mixer devices in hybrid integrated circuits at frequencies from below 100 MHz to higher than 40 GHz. Alpha’s “Universal Chip” design features a 4 mil diameter bond pad that is offset from the semiconductor junction preventing damage to the active junction as a result of wire bonding.
As power-sensing detectors, these Schottky diode chips all have the same voltage sensitivity so long as the output video impedance is much higher than the video resistance of the diode. Figure 1 shows the expected detected voltage sensitivity as a function of RF source impedance in an untuned circuit. Note that sensitivity is substantially increased by transforming the source
impedance from 50 Ω to higher values. Maximum sensitivity occurs when the source impedance equals the video resistance.
In a detector circuit operating at zero bias, depending on the video load impedance, a ZBD device with RV less than 10 kΩ may be more sensitive than a low barrier diode with RV greater than 100 kΩ. Applying forward bias reduces the diode video resistance as shown in Figure 2. Lower video resistance also increases the video bandwidth but does not increase voltage sensitivity, as shown in Figure 3. Biased Schottky diodes have better temperature stability and also may be used in temperature compensated detector circuits.
P-type Schottky diodes generate lower 1/F noise and are preferred for Doppler mixers and biased detector applications. The bond pad for the P-type Schottky diode is the cathode. N-type Schottky diodes have lower parasitic resistance, RS, and will perform with lower conversion loss in mixer circuits. The bond pad for the N-type Schottky diode is the anode.

*For Detector and Mixer Applications
*Low Capacitance for Usage Beyond 40 GHz
*ZBD and Low Barrier Designs
*P-Type and N-Type Junctions
*Large Bond Pad Chip Design

CDC7631-000, CDB7619-000, CDB7620-000, CDF7621-000, CDF7623-000

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*Low forward voltage drop
*High current capability
*High reliability
*High surge current capability

Mechanical Data
*Case: TO-220AB molded plastic
*Epoxy: UL94V-0 rate flame retardant
*Terminals: Solderable per MIL-STD-202, method 208
*Polarity: Color band denotes cathode end
*Mounting position: Any
*Approx. Weight: 1.16 grams

SR10C20C-G, SR10C40C-G, SR10C60C-G, SR10C80C-G, SR10C100C-G

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*Forward Voltage : VF=0.71V (TYP.)
*Forward Current : IF(AV)=100mA
*Repetitive Peak Reverse Voltage : VRM=30V

*Low Current Rectification

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Dual center tap schottky rectifier designed for high frequency miniature Switched Mode Power Supplies.

-High junction temperature capability
-Good trade off between leakage current and forward voltage drop
- Low leakage current


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* Low forward Voltage
* Designed for mounting on small surface.
* Extremely thin/leadless package.
* Majority carrier conduction.

Mechanical data
* Case: SOD-523F (1608) Standard package , molded plastic.
* Terminals: Gold plated, solderable per MIL-STD-750, method 2026.
* Polarity: Indicated by cathode band.
* Mounting position: Any.
* Weight: 0.003 gram (approximately).

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* Lower forward voltage than any ultrafast rectifier: VF < 0.59 V at 150 °C
* Fast switching speed
* Soft recovery characteristics
* Highly stable over temperature
* Pb / RoHS Free

* Case : SMC Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.21 gram

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* Schottky Barrier Chip
* Guard Ring for Transient Protection
* Low Forward Voltage Drop
* Low Reverse Leakage Current
* High Surge Current Capability
* Plastic Material has UL Flammability Classification 94V-O

Mechanical Data
* Case: ITO-220A, Full Molded Plastic
* Terminals: Plated Leads Solderable per MIL-STD-202, Method 208
* Polarity: See Diagram
* Weight: 2.24 grams (approx.)
* Mounting Position: Any
* Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
* Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4

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* Dual Output Boost for Dual Display Devices
* Drives Up to Six White LEDs and OLED/LCD Bias
* Internal Power Switches and Schottky Diodes
* Independent Dimming and Shutdown
* 200mV High Side Sense on LED Driver Allows
“One-Wire Current Source”
* Wide Input Voltage Range: 2.5V to 12V
* Wide Output Voltage Range: Up to 32V
* 2.3MHz PWM Frequency for LED Driver
* PFM for OLED Driver is Non-Audible Over Entire Load Range
* Open LED Protection (27V Maximum on CAP1 Pin)
* OLED Output Disconnect
* Available in 12-Pin DFN Package
* 1mm Tall Solution Height

* Cellular Phones
* PDAs, Handheld Computers
* Digital Cameras
* MP3 Players
* GPS Receivers

The LT®3498 is a dual output boost converter featuring a 2.3MHz PWM LED Driver and PFM OLED Driver. It includes an internal power switch and Schottky diode for each driver. Both converters can be independently shut down and modulated. This highly integrated power solution is ideal for dual display electronic devices.
The 2.3MHz step-up converter is designed to drive up to six white LEDs in series from a Li-Ion cell. The device features a unique high side LED current sense that enables the part to function as a “one-wire” current source—one side of the LED string can be returned to ground anywhere. Traditional LED drivers use a grounded resistor to sense LED current, requiring a 2-wire connection to the LED string.
The PFM OLED driver is a low noise boost converter that features a novel control technique.
The converter controls power delivery by varying both the peak inductor current and switch off time. This technique results in low output voltage ripple, as well as, high effi ciency over a wide load range. The off time of the switch is not allowed to exceed a fi xed level, guaranteeing a switching frequency that stays above the audio band.

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This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes.

* Guardring for Stress Protection
* Low Forward Voltage
* 175°C Operating Junction Temperature
* Epoxy Meets UL 94 V-0 @ 0.125 in
* Short Heat Sink Tab Manufactured - Not Sheared!
* This is a Pb-Free Device

Mechanical Characteristics:
* Case: Epoxy, Molded, Epoxy Meets UL 94 V-0
* Weight: 1.7 grams (approximately)
* Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
* Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
* Device Meets MSL1 Requirements
* ESD Ratings: Machine Model, C (>400 V)

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