Description
The RF650 radio transceiver module provides a reliable wireless communications for the transfer of data at Gaussian Frequency Shift Keying (GFSK), Manchester encoded, RF data rates of up to 100 kbps. Their unique features of narrow band operation and user channel selection combined with excellent interference rejection make them an ideal choice for next generation applications. The transceivers have the functions of a complete radio modem and simply require CMOS/TTL data at the transmit input and the corresponding transceiver(s) output the same data. Preamble and CRC are automatically generated and added to the RF transmission.
Operating within the 433MHz band the modules operate in user selectable channels. The RF650 can use any channel in 100kHz steps. The modules both use a crystal controlled design which provides narrow band performance which is far superior to other wideband ‘SAW’ based designs.
Possible applications include one-to-one and multi-node wireless links in applications including car and building security, EPOS, inventory tracking, remote industrial process monitoring and computer networking. Because of their small size and low power requirements, both modules are ideal for use in portable, batterypowered applications such as hand-held terminals.

Features
*Intelligent Modem RF Transceiver
*RF Data Rates to 100 kbps
*Up to 250 metres Range
*Selectable ‘Narrowband’ RF Channels
*Crystal Controlled RF Design
*Supply Voltage 3.3V
*Serial Data Interface with Handshake
*Host Data Rates up to 38,400 Baud
*Very Stable Operating Frequency
*Low Profile Ceramic DIL Package
*Operates from –20 to +70 0C
*Evaluation Board for Rapid Development

Applications
*Wireless Security Systems
*EPOS Terminals
*Sensor Data logging
*Remote Telemetry & Telecommand
*Remote Meter Reading

RF650-868, RF650-EVAL

Trackback :: http://datasheetblog.com/trackback/2504

댓글을 달아 주세요 Comment

Description
The Si4720/21 is the first single chip FM radio transceiver. The proven and patented digital architecture of the Si4720/21 combines the functionality of the Si470x FM radio receiver with the Si471x FM transmitter, offering full FM receive and transmit capabilities in a single, ultra-small 3x3x0.55 mm QFN package. The device leverages Silicon Lab's highly successful and proven FM technology, and offers unmatched integration and performance allowing FM receive and transmit to be added to any portable device by using a single chip. As with the Si470x and Si471x products, the Si4720/21 offers industry leading size, performance, low power consumption, and ease of use.
The Si4720/21's digital integration reduces the required external components of traditional offerings, resulting in a solution requiring only an external inductor and bypass capacitor, and a PCB space of approximately 15 mm2. The Si4720/21 is layout compatible with Silicon Laboratories' Si470x FM radio receivers, Si473x AM/FM radio receivers, and the Si471x FM radio transmitter solutions, allowing a single PCB layout to accommodate a variety of music features. High yield manufacturability, unmatched performance, easy design-in, and software programmability are key advantages of the Si4720/21.
The Si4721 is the industry's first single-chip integrated FM radio transceiver including both receive and transmit support for the European Radio Data System (RDS) and the U.S. Radio Broadcast Data System (RBDS). RDS allows digital information sent from the broadcaster to be displayed, such as station ID, song name and music category. In Europe, alternate frequency (AF) information is also provided to automatically change stations in areas where broadcasters use multiple frequencies. In transmit mode, digital information such as artist name, song title, music category, and branded messaging can be transmitted and displayed on any RDS/RBDS receiver.
Users are responsible to adjust their system's radiated power levels to comply with local regulations on RF transmission (FCC, ETSI, ARIB, etc.).

Features
*Integrated FM antenna support
*Excellent real-world performance
*Only two external components required
*Worldwide FM band support (76 to 108 MHz)
*RDS/RBDS processor (Si4721)
*Frequency synthesizer with integrated VCO
*Adjustable seek parameters
*Adjustable mono/stereo blend
*Adjustable soft mute
*Programmable transmit output voltage control
*Audio dynamic range control
*Advanced modulation control
*Analog/digital audio interface
*Programmable reference clock input
*Programmable pre/de-emphasis (50/75 μs)
*2-wire and 3-wire control interface
*Integrated LDO regulator
*2.7 to 5.5 V supply voltage
*3x3x0.55 mm 20-pin Pb-free QFN package

Applications
*Cellular handsets/hands free
*MP3 players
*Portable media players
*GPS/navigation devices
*Satellite digital audio radios
*Personal computers

SI4721

Trackback :: http://datasheetblog.com/trackback/2381

댓글을 달아 주세요 Comment

DESCRIPTION
The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to 520-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=30W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that VGG is 4V (typical) and 5V (maximum).
At VGG=5V, the typical gate currents are 1mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES
*Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
*Pout>30W, ηT>42% @ VDD=12.5V, VGG=5V, Pin=50mW
*Broadband Frequency Range: 450-520MHz
*Metal shield structure that makes the improvements of spurious radiation simple
*Low-Power Control Current IGG=1mA (typ) @ VGG=5V
*Module Size: 67 x 18 x 9.9 mm
*Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power.

RA30H4552M1-101

Trackback :: http://datasheetblog.com/trackback/2358

댓글을 달아 주세요 Comment

DESCRIPTION
The RA55H3340M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES
*Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
*Pout>55W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW
*Broadband Frequency Range: 330-400MHz
*Low-Power Control Current IGG=1mA (typ) at VGG=5V
*Module Size: 66 x 21 x 9.88 mm
*Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

RA55H3340M-101

TAG Amp, Mobile, Radio

Trackback :: http://datasheetblog.com/trackback/2211

댓글을 달아 주세요 Comment

• Addressed Mode With Acknowledge
• Broadcast Mode
• Automatic Retry
• Serial Interface
• Stand Alone Operation
• Achieves Maximum Range From RF Modules
• Flow Control Option
• Two Telemetry I/O Lines (addressed mode only)
• Compatible With Most RF Modules

The RF600T provides a simple interface between TTL level asynchronous serial data sources and standard RF modules (Transceiver, Transmitter or Receiver).
The device allows for either broadcast or addressed point to point modes of operation and is simple to use with minimal interface required.
Data packet generation is automatically performed along with ‘Manchester’ encoding and CRC based error checking.
In addition, in addressed mode, automatic retries ensure that the host is informed of successful or failed data packet delivery.
The RF600T uses control lines to handle the flow of data to and from the host, and incorporates a 190 byte data buffer.

Typical Applications
• Wireless RS232
• Cable Replacement
• Alarm Systems
• Communications Systems
• Local Area Networking

Hardware Features
• 3.0 – 5.5V Operation. (2.0 – 5.5V optional)
• 190 Byte Internal Buffer
• ‘Manchester’ Modulation On Radio Link
• CRC Error Checking
• 18 pin DIP/SOIC Package
• 2 Digital Telemetry Lines (addressed mode only)
• Asynchronous Serial Host Interface

RF600T-SO

Trackback :: http://datasheetblog.com/trackback/1537

댓글을 달아 주세요 Comment

Features
• Integrated RF transceiver and modem for Bluetooth wireless technology.
• Manufactured using low-power 0.18-micron CMOS process technology.
• Digital baseband interface connects directly to an integrated Bluetooth controller.
• Direct conversion RF architecture improves receiver-blocking performance.
• Low out-of-band spurious emissions minimize interference with mobile phone operations.
• Hardware AGC dynamically adjusts receiver performance in changing environments.
• 50 Ω RF I/O does not need additional external impedance matching components.
• On-chip voltage regulation simplifies system design.
• -88 dBm receiver sensitivity and +2 dBm transmitter power typical performance specifications.
• Bluetooth Specification V2.0 qualified. Complies with Bluetooth specifications V1.1, V1.2 and V2.0.

Applications
• Mobile phones with integrated controller for Bluetooth wireless technology.

Description
The following figure shows the SiW1721B Radio Modem functional block diagram. During the receive process, the radio signal is taken from the single-ended RF input pin that feeds into the low noise amplifier (LNA). The signal from the LNA is directly down-converted to I/Q baseband, filtered with an anti-aliasing filter, and converted to a digital signal with a high resolution analog-to-digital converter. The critical channel filtering is done in the digital domain for stable and repeatable performance. The signal is then processed by a high performance GFSK demodulator. The IC has multiple internal selfcalibration circuits to maintain stable and repeatable performance from part-to-part as well as over the full temperature range.
The IC has two fully integrated regulators: one for the radio (analog regulator) and one for the digital logic (digital regulator). The digital regulator can be used to supply a Bluetooth baseband controller. Both regulators can be bypassed if external regulation is desired.
Note: When bypassing the analog regulator, the VBATT_ANA and VCC_OUT pins must be tied together and the external analog voltage (1.8 V) should be applied to the VBATT_ANA pin. When bypassing the digital regulator, the VBATT_DIG pin should be left unconnected and the external digital voltage (1.8 V) should be applied to the VBB_OUT pin.
The IC also provides power on reset and glitch-free clock start-up. A reference PLL can be enabled to support a number of different reference frequencies.
Digital control functions and a programming interface provide radio modem control and a flexible interface to external Bluetooth link controllers.
TAG Modem, Radio

Trackback :: http://datasheetblog.com/trackback/1220

댓글을 달아 주세요 Comment

GENERAL DESCRIPTION
The TEA5768HL is a single-chip electronically tuned FM stereo radio for low-voltage applications with fully integrated IF selectivity and demodulation. The radio is completely adjustment-free and only requires a minimum of small and low cost external components. The radio can be tuned to the European, US and Japanese FM bands.

FEATURES
· High sensitivity due to integrated low-noise RF input amplifier
· FM mixer for conversion to IF of the US/Europe
  (87.5 MHz to 108 MHz) and Japanese
  (76 MHz to 91 MHz) FM band
· Preset tuning to receive Japanese TV audio up to 108 MHz
· RF Automatic Gain Control (AGC) circuit
· LC tuner oscillator operating with low cost fixed chip inductors
· FM IF selectivity performed internally
· No external discriminator needed due to fully integrated FM demodulator
· Crystal reference frequency oscillator; the oscillator operates with a 32.768 kHz clock crystal or with a 13 MHz crystal and with an externally applied 6.5 MHz reference frequency
· PLL synthesizer tuning system
· I2C-bus
· 7-bit IF counter output via the I2C-bus
· 4-bit level information output via the I2C-bus
· Soft mute
· Signal dependent mono to stereo blend [Stereo Noise Cancelling (SNC)]
· Signal dependent High Cut Control (HCC)
· Soft mute, SNC and HCC can be switched off via the I2C-bus
· Adjustment-free stereo decoder
· Autonomous search tuning function
· Standby mode
· Two software programmable ports
· Bus enable line to switch the bus input and output lines into 3-state mode

Trackback :: http://datasheetblog.com/trackback/114

댓글을 달아 주세요 Comment

DESCRIPTION
The TDA7560 is a breakthrough BCD (Bipolar / CMOS / DMOS) technology class AB Audio
Power Amplifier in Flexiwatt 25 package designed for high power car radio
The fully complementary P-Channel/N-Channel output structure allows a rail to rail output voltage swing which, combined with high output current and minimised saturation losses sets new power references in the car-radio field, with unparalleled distortion performances.

FEATURES
• SUPERIOR OUTPUT POWER CAPABILITY:
  4 x 50W/4W MAX.
  4 x 45W/4W EIAJ
  4 x 30W/4W @14.4V, 1KHz, 10%
  4 x 80W/2W MAX.
  4 x 77W/2W EIAJ
  4 x 55W/2W @14.4V, 1KHz, 10%
• EXCELLENT2W DRIVINGCAPABILITY
• HI-FI CLASS DISTORTION
• LOW OUTPUT NOISE
• ST-BY FUNCTION
• MUTE FUNCTION
• AUTOMUTE AT MIN. SUPPLY VOLTAGE DETECTION
• LOW EXTERNAL COMPONENT COUNT:
  – INTERNALLY FIXED GAIN (26dB)
  – NOEXTERNAL COMPENSATION
  – NOBOOTSTRAP CAPACITORS
• ON BOARD 0.35A HIGH SIDE DRIVER

PROTECTIONS:
• OUTPUT SHORT CIRCUIT TO GND, TO VS, ACROSS THE LOAD
• VERYINDUCTIVE LOADS
• OVERRATING CHIP TEMPERATURE WITH SOFT THERMAL LIMITER
• LOAD DUMP VOLTAGE

Trackback :: http://datasheetblog.com/trackback/92

댓글을 달아 주세요 Comment