'RF Switch' related articles 1

  1. 2009/10/22 PE42510A - SPDT High Power UltraCMOS™ RF Switch 30 - 2000 MHz
Product Description
The following specification defines an SPDT (single pole double throw) switch for use in cellular and other wireless applications. The PE42510A uses Peregrine’s UltraCMOS™ process and it also features HaRP™ technology enhancements to deliver high linearity and exceptional harmonics performance. HaRP™ technology is an innovative feature of the UltraCMOS™ process providing upgraded linearity performance.
The PE42510A is manufactured on Peregrine’s UltraCMOS™ process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS.

*No blocking capacitors required
*50 Watt P1dB compression point
*10 Watts <8:1 VSWR (Normal Operation)
*29 dB Isolation @800 MHz
*< 0.3 dB Insertion Loss at 800 MHz
*2fo and 3fo < -84 dBc @ 42.5 dBm
*ESD rugged to 2.0 kV HBM
*32-lead 5x5 mm QFN package

PE42510AMLI, PE42510AMLI-Z, EK42510-01

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