ㅁ TYPICAL RDS(on) = 0.48 W
ㅁ EXTREMELY HIGH dv/dt CAPABILITY
ㅁ 100% AVALANCHE TESTED
ㅁ VERY LOW INTRINSIC CAPACITANCES
ㅁ GATE CHARGE MINIMIZED

DESCRIPTION
This power MOSFET is designed using the company’s consolidated strip layout-based MESH
OVERLAY process. This technology matches and improves the performances compared with
standard parts from various sources.

APPLICATIONS
ㅁ HIGH CURRENT SWITCHING
ㅁ UNINTERRUPTIBLE POWER SUPPLY (UPS)
ㅁ DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

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