PRODUCT DESCRIPTION
The AWT6275 meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4 mm x 4 mm x 1.5 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.

FEATURES
*InGaP HBT Technology
*High Efficiency:
-43% @ POUT = +27.5 dBm
-21% @ POUT = +16 dBm
-15% @ POUT = +7 dBm
*Low Quiescent Current: 16 mA
*Low Leakage Current in Shutdown Mode: <1 μA
*VREF = +2.85 V (+2.75 V min over temp)
*Optimized for a 50 Ω System
*Low Profile Miniature Surface Mount Package Option: 1.1 mm Max
*RoHS Compliant Package, 250 oC MSL-3
*HSDPA Capable

APPLICATIONS
*Dual Band WCDMA Wireless Handsets
*Dual Mode 3GPP Wireless Handsets

AWT6275RM20P8

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DESCRIPTION
The SP6122 is a PWM/PFM minimum on-time controller designed to work from a single 3V-5.5V input supply. It is engineered specifically for size and minimum component count, simplifying the transition from a linear regulator to a switcher solution. However, unlike other “micro” parts, the SP6122 has an array of value added features such as optional hiccup mode, over current protection, TTL enable, “jitter and frequency stabilization” and a fault flag pull-down pin. Combined with reference and driver specifications usually found on more expensive integrated circuits, the SP6122 delivers great performance and value in an 8 pin MSOP package.

FEATURES
*Optimized for Single Supply, 3V-5.5V Applications
*High Efficiency, Greater than 90% Possible
*20ns/1nF PFET Output Driver
*Fast Transient Response
*Open Drain Fault Output Pin
*Internal Soft Start Circuit
*Accurate 1.5% Reference
*Programmable Output Voltage or Fixed 1.5V Output
*Loss-less Adjustable Current Limit with High side RDS(ON) Sensing
*Hiccup or Lock-up Fault Modes
*Low 5μA Sleep Mode Quiescent Current
*Low 300μA Protected Mode Quiescent Current
*Ultra Low, 150μA Unprotected Mode Quiescent Current
*High Light Load Efficiency
*Offered in Tiny 8 pin MSOP Package

APPLICATIONS
*Video Cards
*High Power Portable
*Microcontrollers
*I/O & Logic
*Industrial Control
*Distributed Power
*Low Voltage Power

SP6122ACU, SP6122ACU/TR, SP6122ACU-1.5, SP6122ACU-1.5/TR

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PRODUCT DESCRIPTION
The SST12LP07 is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology.
The SST12LP07 can be easily configured for high-power applications with good power-added efficiency while operating over the 2.4- 2.5 GHz frequency band. This device typically provides 29 dB gain with 22% power-added efficiency @ POUT = 22 dBm for 802.11g and 21% poweradded efficiency @ POUT = 22 dBm for 802.11b.
The SST12LP07 has excellent linearity, typically ~2.5% added EVM at 19 dBm output power which is essential for 54 Mbps 802.11g/n operation while meeting 802.11g spectrum mask at 22 dBm. The SST12LP07 can also be configured for high-efficiency operation, typically 17 dBm linear 54 Mbps 802.11g output power at 85 mA total power consumption. High-efficiency operation is desirable in embedded applications such as in hand-held units.
The SST12LP07 also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. Ultra-low reference current (total IREF ~2 mA) makes the SST12LP07 controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST12LP07 ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications.
The SST12LP07 has an excellent on-chip, single-ended power detector, which features wide-range (~20 dB) with dB-wise linearization and high stability over temperature (<+/-0.3 dB 0°C to +85°C), frequency (<+/-0.3 dB across Channels 1 through 14), and output load (<+/-0.4 dB
with 2:1 output VSWR all phases). The excellent onchip power detector provides a reliable solution to board-level power control.
The SST12LP07 is offered in a 16-contact VQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions.

FEATURES
*High Gain:
-Typically 29 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C
*High linear output power:
->26 dBm P1dB
--Please refer to “Absolute Maximum Stress Ratings” on page 4
-Meets 802.11g OFDM ACPR requirement up to 22 dBm
-~2.5% added EVM up to 19 dBm for 54 Mbps 802.11g signal
-Meets 802.11b ACPR requirement up to 22 dBm
*High power-added efficiency/Low operating current for both 802.11g/b applications
-~22%/220 mA @ POUT = 22 dBm for 802.11g
-~21%/230 mA @ POUT = 22 dBm for 802.11b
*Single-pin low IREF power-up/down control
-IREF <2 mA
*Low idle current
-~70 mA ICQ
*High-speed power-up/down
-Turn on/off time (10%- 90%) <100 ns
-Typical power-up/down delay with driver delay included <200 ns
*High temperature stability
-~1 dB gain/power variation between 0°C to +85°C
*Low shut-down current (< 0.1 μA)
*Excellent On-chip power detection
-<+/- 0.3dB variation between 0°C to +85°C
-<+/- 0.4dB variation with 2:1 VSWR mismatch
-<+/- 0.3dB variation Ch1 through Ch14
*20 dB dynamic range on-chip power detection
*Simple input/output matching

APPLICATIONS
*WLAN (IEEE 802.11g/b)
*Home RF
*Cordless phones
*2.4 GHz ISM wireless equipment
*Packages available
-16-contact VQFN – 3mm x 3mm
*All non-Pb (lead-free) devices are RoHS compliant

SST12LP07-QVCE-K, SST12LP07-QVCE

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Description
The GAL20V8Z and GAL20V8ZD, at 100 μA standby current and 12ns propagation delay provides the highest speed and lowest power combination PLD available in the market. The GAL20V8Z/ZD is manufactured using Lattice Semiconductor's advanced zero power E2CMOS process, which combines CMOS with Electrically Erasable (E2) floating gate technology.
The GAL20V8Z uses Input Transition Detection (ITD) to put the device in standby mode and is capable of emulating the full functionality of the standard GAL20V8. The GAL20V8ZD utilizes a dedicated power-down pin (DPP) to put the device in standby mode. It has 19 inputs available to the AND array.
Unique test circuitry and reprogrammable cells allow complete AC, DC, and functional testing during manufacture. As a result, Lattice Semiconductor delivers 100% field programmability and functionality of all GAL products. In addition, 100 erase/write cycles and data retention in excess of 20 years are specified.

Features
*ZERO POWER E2CMOS TECHNOLOGY
-100μA Standby Current
-Input Transition Detection on GAL20V8Z
-Dedicated Power-down Pin on GAL20V8ZD
-Input and Output Latching During Power Down
*HIGH PERFORMANCE E2CMOS TECHNOLOGY
-12 ns Maximum Propagation Delay
-Fmax = 83.3 MHz
-8 ns Maximum from Clock Input to Data Output
-TTL Compatible 16 mA Output Drive
-UltraMOS® Advanced CMOS Technology
*E2 CELL TECHNOLOGY
-Reconfigurable Logic
-Reprogrammable Cells
-100% Tested/100% Yields
-High Speed Electrical Erasure (<100ms)
-20 Year Data Retention
*EIGHT OUTPUT LOGIC MACROCELLS
-Maximum Flexibility for Complex Logic Designs
-Programmable Output Polarity
-Architecturally Similar to Standard GAL20V8
*PRELOAD AND POWER-ON RESET OF ALL REGISTERS
-100% Functional Testability
*APPLICATIONS INCLUDE:
-Battery Powered Systems
-DMA Control
-State Machine Control
-High Speed Graphics Processing
*ELECTRONIC SIGNATURE FOR IDENTIFICATION

GAL20V8ZD, GAL20V8Z-12QP, GAL20V8Z-12QJ, GAL20V8ZD-12QP
TAG E2CMOS, PLD, Power

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DESCRIPTION
The EP1551 is a small, high efficiency, five-channel, power-supply for digital still and video cameras. It consists of:
*Step-up DC-DC converter with on-chip power MOSFETs for 3.3V main system supply with up to 95% efficiency. It accepts inputs from 0.7V to 5.5V and regulates a resistor-adjustable output from 2.7V to 5.5V.
*Step-down main DC-DC converter with on-chip power MOSFETs for 1.5V DSP core supply with up to 92% efficiency. It can operate from the Step-up main system supply providing buck-boost capability with up to 90% compound efficiency, or it can run directly from battery if buck-boost operation is not needed.
*PWM controller with external FET for Step-up DC-DC converter for 5V motor actuator
*PWM controller with external FET for 15V LCD supply
*PWM controller with external FET and transformer for –7.5V and +15V CCD Bias
All DC-DC channels operate at one fixed frequency settable from 100KHz to 1MHz to optimize size, cost and efficiency. Other features include soft-start, power-OK outputs, and overload protection. The EP1551 is available in apace saving QFN-32 5 x 5 mm packages. An evaluation kit is also available to expedite design.

FEATURES
*Up to 95% efficiency Step-up and up to 92% efficient Step-down converters
*Combine Step-up and Step-down for up to 87% efficiency buck-boost operations
*Minimum 0.7V input voltage
*2μA shutdown mode
*Internal soft start control
*Overload protection
*Compact QFN-32 5 x 5 mm package

APPLICATIONS
*Digital still camera
*Digital video camera
*PDA
*MP3
*PMP
*Portable DVD Player
*Car navigation
TAG Power, Supply

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DESCRIPTION
The PA12 is a state of the art high voltage, very high output current operational amplifier designed to drive resistive, inductive and capacitive loads. For optimum linearity, especially at low levels, the output stage is biased for class A/B operation using a thermistor compensated base-emitter voltage multiplier circuit. The safe operating area (SOA) can be observed for all operating conditions by selection of user programmable current limiting resistors. For continuous operation under load, a heatsink of proper rating is recommended. The PA12 is not recommended for gains below –3 (inverting) or +4 (non-inverting).
This hybrid integrated circuit utilizes thick film (cermet) resistors, ceramic capacitors and semiconductor chips to maximize reliability, minimize size and give top performance. Ultrasonically bonded aluminum wires provide reliable interconnections at all operating temperatures. The 8-pin TO-3 package is hermetically sealed and electrically isolated. The use of compressible isolation washers voids the warranty.

FEATURES
*LOW THERMAL RESISTANCE — 1.4°C/W
*CURRENT FOLDOVER PROTECTION — NEW
*HIGH TEMPERATURE VERSION — PA12H
*EXCELLENT LINEARITY — Class A/B Output
*WIDE SUPPLY RANGE — ±10V to ±50V
*HIGH OUTPUT CURRENT — Up to ±15A Peak

APPLICATIONS
*MOTOR, VALVE AND ACTUATOR CONTROL
*MAGNETIC DEFLECTION CIRCUITS UP TO 10A
*POWER TRANSDUCERS UP TO 100kHz
*TEMPERATURE CONTROL UP TO 360W
*PROGRAMMABLE POWER SUPPLIES UP TO 90V
*AUDIO AMPLIFIERS UP TO 120W RMS

PA12A

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DESCRIPTION
NEC's UPG2010TB is a single control GaAs MMIC L-band SPDT (Single Pole Double Throw) switch for mobile phone and L-band applications.
This device can operate from 0.5 to 2.5 GHz, with low insertion loss and high isolation.
This device is housed in a 6-pin super minimold package, suitable for high-density surface mounting.

FEATURES
*SUPPLY VOLTAGE:
-VDD = 2.7 to 3.0 V (2.8 V TYP.)
*SWITCH CONTROL VOLTAGE:
-Vcont (H) = 2.7 to 3.0 V (2.8 V TYP.)
-Vcont (L) = −0.2 to +0.2 V (0 V TYP.)
*LOW INSERTION LOSS:
-LINS1 = 0.25 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
-LINS2 = 0.30 dB TYP. @ f = 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
-LINS3 = 0.35 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V(Reference value)
*HIGH ISOLATION:
-ISL1 = = 28 dB TYP. @ f = 0.5 to 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
-ISL2 = 25 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V(Reference value)
*POWER HANDLING:
-Pin (0.1 dB) = +33.0 dBm TYP. @ f = 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
*HIGH-DENSITY SURFACE MOUNTING:
-6-pin super minimold package (2.0 × 1.25 × 0.9 mm)

APPLICATIONS
*L-band digital cellular or cordless handsets
*PCS, W-LAN, WLL and BluetoothTM
*Short Range Wireless

UPG2010TB-E3-A

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DESCRIPTION
The AIC1527 is a quad high-side power switch for self-powered and bus-powered Universal Serial Bus (USB) applications. One high-side switch is a MOSFET with 110mW RDS(ON), which meets USB voltage drop requirements for maximum transmission wire length.
Multi-purpose open-drain fault flag output indicates over-current limiting, thermal shutdown, or undervoltage lockout for each channel. Output current is typically limited to 1A, well below the 5A safety requirement, and the thermal shutdown function independently controls each channel
under overcurrent condition.
Guaranteed minimum output rise time limits inrush current during hot plug-in, minimizing EMI
and preventing the voltage at upstream port from dropping excessively.

FEATURES
*110mW (5V Input) High-Side MOSFET Switch.
*500mA Continuous Load Current per Channel.
*220mA Typical On-State Supply Current.
*1mA Typical Off-State Supply Current.
*Current-Limit / Short Circuit Protection.
*Thermal Shutdown Protection under Overcurrent Condition.
*Undervoltage Lockout Ensures that Switch is off at Start Up.
*Output can be Forced Higher than Input (Off-State).
*Open-Drain Fault Flag.
*Slow Turn ON and Fast Turn OFF.
*Enable Active-High or Active-Low.

APPLICATIONS
*USB Power Management.
*Hot Plug-In Power Supplies.
*Battery-Charger Circuit.

AIC1527-0CN, AIC1527-1CN, AIC1527-0CS, AIC1527-1CS

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General Description
The kB2338A is a high efficiency, 3W mono class-D audio power amplifier. A low noise, filterless PWM architecture eliminates the output filter, reducing external component count, system cost, and simplifying design.
Operating in a single 5V supply, kB2338A is capable of driving 4Ω speaker load at a continuous average output of 3W/10% THD+N or 2W/1% THD+N. The kB2338A has high efficiency with speaker load compared to a typical class AB amplifier. With a 3.6V supply driving an 8Ω speaker , the efficiency for a 400mW power level is 88%. In cellular handsets, the earpiece, speaker phone, and melody ringer can each be driven by the kB2338A. The gain of kB2338A is externally configurable which allows independent gain control from multiple sources by summing signals from seperate sources.
The kB2338A is available in space-saving WCSP and DFN packages.

Features
*Unique Modulation Scheme Reduces EMI Emissions
*Efficiency at 3.6V With an 8-Ω Speaker:
-88% at 400 mW
-80% at 100 mW
*Low 2.38-mA Quiescent Current and 0.5-μA Shutdown Current
*2.5V to 6.0V Wide Supply Voltage
*Optimized PWM Output Stage Eliminates LC Output Filter
*Improved PSRR (-72 dB) Eliminates Need for a Voltage Regulator
*Fully Differential Design Reduces RF Rectification and Eliminates Bypass Capacitor
*Improved CMRR Eliminates Two Input Coupling Capacitors
*Internally Generated 250-kHz Switching Frequency
*Integrated Pop and Click Suppression Circuitry
*1.5mm x 1.5mm Wafer Chip Scale Package (WCSP) and 3mm x 3mm DFN-8 package
*RoHS compliant and 100% lead(Pb)-free

Applications
*Cellular Phone
*Portable Electronic Devices
*PDAs and Smart Phones
*Portable Computer

KBA2338-WCSP

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PRODUCT DESCRIPTION
The SST12LP10 is a high-performance power amplifier based on the highly-reliable InGaP/GaAs HBT technology.
The SST12LP10 can be easily configured for high-power, high-efficiency applications with superb power-added efficiency while operating over the 2.4~2.5 GHz frequency band. It provides over 26 dB gain with 19% power-added efficiency @ POUT = 20 dBm for 802.11g and 30% poweradded efficiency @ POUT = 24 dBm for 802.11b.
The SST12LP10 has excellent linearity (over 20 dBm linear output with total system EVM<5%) which is essential for 54 Mbps 802.11g operation.
The power amplifier IC also features easy board-level usage along with high-speed power-up/down control and ultra-low reference current (~3 mA). These features coupled with low operating current make the SST12LP10 ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications.
The SST12LP10 is offered in 16-contact VQFN package. See Figure 1 for pin assignments and Table 1 for pin descriptions.

FEATURES
*High Gain:
–>26 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C
*High linear output power:
–~27 dBm P1dB
–Meets 802.11g OFDM ACPR requirement up to 23 dBm
–Over 20 dBm linear output with total system EVM<5% for 54 Mbps 802.11g signal
–Meets 802.11b ACPR requirement up to 24 dBm
*High power-added efficiency/Low operating current for both 802.11g/b applications
–~19% @ POUT = 20 dBm for 802.11g
–~30% @ POUT = 24 dBm for 802.11b
*Ultra-low Reference Current
–~3 mA Total IREF
*Low idle current
–~60 mA ICQ
*High-speed power-up/down
–Turn on/off time (10%~90%) <100 ns
–Typical power-up/down delay with driver delay included <200 ns
*High temperature stability
–~1 dB gain/power variation between 0°C to +80°C
*Low shut-down current (< 0.1 μA)
*Simple input/output matching
*Packages available
–16-contact VQFN (3mm x 3mm)
–Non-Pb (lead-free) packages available

APPLICATIONS:
*WLAN (IEEE 802.11g/b)
*Home RF
*Cordless phones
*2.4 GHz ISM wireless equipment

SST12LP10-QVC, SST12LP10-QVCE, SST12LP10-QVC-K, SST12LP10-QVCE-K

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