Description
Peripheral Imaging Corporation's HSN series is family of self-scanning photodiode solid-state linear imaging arrays. These photodiode sensors employ PIC’s proprietary CMOS Image Sensing Technology to integrate the sensors into a single monolithic chip. These sensors are optimally designed for applications in spectroscopy. Accordingly, these sensors contain a linear array of photodiodes with an optimized geometrical aspect ratio (25-μm aperture pitch x 2500-μm aperture width) for helping to maintain mechanical stability in spectroscopic instruments and for providing a large light-capturing ability. The family of sensors consists of photodiode arrays of various lengths, 256, 512, and 1024 pixels.
The HSN photodiode arrays are mounted in 22-pin ceramic side-brazed dual-in-line packages that fit in standard DIP sockets. A diagram of its pinout configuration is seen in Figure 1.

Features
*Selectable saturation charge capacities. 65-pC capacity for wider dynamic range. 25-pC for lower noise readout.
*Wide spectral response (180 – 1000 nm) for UV and IR response.
*NP junction photodiodes with superior resistance to UV damage.
*Low dark current.
*Integration time up to 11 seconds at room te mperature.
*Integration time extended to hours by cooling.
*Anti-blooming circuitry.
*High linearity.
*Low power dissipation (less than 1 mW).
*Geometrical structure for enhanced stability and registration.
*Standard 22-lead dual-in-line IC package.

PI0512HSN, PI1024HSN

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Description
AMI Semiconductor’s WSN series is a family of self-scanning photodiode solid-state linear imaging arrays. These photodiode sensors employ AMI Semiconductor’s proprietary CMOS image sensing technology to integrate the sensors into a single monolithic chip. These sensors are optimally designed for applications in spectroscopy. Accordingly, these sensors contain a linear array of photodiodes with an optimized geometrical aspect ratio (50μm aperture pitch x 2500μm aperture width) for helping to maintain mechanical stability in spectroscopic instruments and for providing a large light-capturing ability. The family of sensors consists of photodiode arrays of various lengths - 128, 256 and 512 pixels.
The WSN photodiode arrays are mounted in 22-pin ceramic side-brazed dual-in-line packages that fit in standard DIP sockets.

Features
*65pC saturation capacity for wide dynamic range
*Wide spectral response (180 – 1000nm) for UV and IR response
*NP junction photodiodes with superior resistance to UV damage
*Low dark current
*Integration time up to nine seconds at room temperature
*Integration time extended to hours by cooling
*High linearity
*Low power dissipation (less than 1mW)
*Geometrical structure for enhanced stability and registration
*Standard 22 lead dual-in-line IC package

AMIS-732256, AMIS-732512

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Description
Peripheral Imaging Corporation's WSN series is family of self-scanning photodiode solid-state linear imaging arrays. These photodiode sensors employ PIC’s proprietary CMOS Image Sensing Technology to integrate the sensors into a single monolithic chip. These sensors are optimally designed for applications in spectroscopy. Accordingly, these sensors contain a linear array of photodiodes with an optimized geometrical aspect ratio (50-mm aperture pitch x 2500-mm aperture width) for helping to maintain mechanical stability in spectroscopic instruments and for providing a large light-capturing ability. The family of sensors consists of photodiode arrays of various lengths, 128, 256, and 512 pixels.
The WSN photodiode arrays are mounted in 22-pin ceramic side-brazed dual-in-line packages that fit in standard DIP sockets. A diagram of its pinout configuration is seen in Figure 1.

Features
*65-pC saturation capacity for wide dynamic range.
*Wide spectral response (180 – 1000 nm) for UV and IR response.
*NP junction photodiodes with superior resistance to UV damage.
*Low dark current.
*Integration time up to 9 seconds at room temperature.
*Integration time extended to hours by cooling.
*High linearity.
*Low power dissipation (less than 1 mW).
*Geometrical structure for enhanced stability and registration.
*Standard 22-lead dual-in-line IC package.

PI0128WSN, PI0256WSN, PI0512WSN

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Description
BPV23NF(L) is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens.
The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on GaAlAs IR emitters (λ p = 950 nm, srel(λ = 875 nm) > 90 %).
Lens radius and chip position are perfectly matched to the chip size, giving high sensitivity without compromising the viewing angle.
In comparison with flat packages the spherical lens package achieves a sensitivity improvement of 80 %.

Features
• Large radiant sensitive area (A = 5.7 mm2)
• Wide viewing angle ϕ = ± 60°
• Improved sensitivity
• Fast response times
• Low junction capacitance
• Plastic package with universal IR filter
• Option "L": long lead package optional available with suffix "L"; e.g.: BPV23FL
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Applications
Infrared remote control and free air transmission systems in combination with IR emitter diodes (TSU.-, TSI.-, or TSH.-Series). High sensitivity detector for high data rate transmission systems.
The IR filter matches perfectly to the high speed infrared emitters in the 830 nm to 880 nm wavelength range.

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