General Description
The MX884 targets power management applications where high noise immunity and low cost are primary requirements. Its integrated 10-bit ADC provides high resolution, making it ideal for current monitoring systems. The MX884 enables digital power management, in which a microcontroller can readily monitor the current in a system and perform other control functions in power systems and motion control products.
The MX884 converts a small voltage developed across an external “current” sense resistor to a 10-bit digital output. It features a wide common mode input supply voltage range of 3V to 60V and easily interfaces to most microcontrollers. The design is simple yet cost-effective, requiring very few external components, making it especially suitable for high volume applications.

*3-60 V Operating Voltage Range
*Integrated 10-bit ADC
*3 wire serial interface
*Microcontroller Compatible
*Low Power
*Minimum External Components
*TSOT-23 RoHS Compliant Package

*Lighting Management
*Current Shunt Measurement
*Remote Sensing
*Battery Monitoring
*Microprocessor Controlled Power Management


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The TK119xx series are low power, linear regulators with built-in electronic switches. Built-in voltage comparators provide a reset logic ”low” level whenever the input or output voltage falls outside internally preset limits. The internal electronic switch can be controlled by CMOS or TLL levels. The device is in the “off” state when the control pin is biased “high”.
An internal PNP pass-transistor is used in order to achieve low dropout voltage (typically 200 mV at 50 mA load current). The device has very low quiescent current (130 mA) in the “on” mode with no load and 2 mA with 30 mA load. The quiescent current is typically 4 mA at 60 mA load. The current consumption in the “off” mode is 65 mA.
An internal thermal shutdown circuit limits the junction temperature to below 150 oC. The load current is internally monitored and the device will shut down (no load current) in the presence of a short circuit at the output. The output noise is very low at 100 dB down from VOUT when an external noise bypass capacitor is used. The TK119xx is available in a miniature SOT-23L surface mount package.

*Very Low Dropout Voltage
*Reset Output for Microprocessor
*Very Low Quiescent Current (No Load)
*Internal Thermal/Overload Shutdown
*Low Noise Voltage
*Input and Output Voltage Sense
*± 2.5 % Output Voltage Accuracy
*CMOS or TTL On/Off Control
*High Speed On/Off Transient (50 ms typ.)

*Battery Powered Systems
*Cellular Telephones
*Personal Communications Equipment
*Portable Instrumentation
*Portable Consumer Equipment
*Radio Control Systems
*Low Voltage Systems

TK11922, TK11927, TK11930, TK11932, TK11935, TK11940, TK11948, TK11950

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The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-pin, resp. 16-pin plastic dual inline package.
The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements.

*CNY74-2H includes 2 isolator channels
*CNY74-4H includes 4 isolator channels
*Isolation test voltage VISO = 5000 VRMS
*Test class 25/100/21 DIN 40 045
*Low coupling capacitance of typical 0.3 pF
*Current transfer ratio (CTR) of typical 100 %
*Low temperature coefficient of CTR
*Wide ambient temperature range
*Coupling system U
*Lead (Pb)-free component
*Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

*Galvanically separated circuits, non-interacting switches


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General Description
The MAX8741/MAX8742 are buck-topology, step-down, switch-mode, power-supply controllers that generate logic-supply voltages in battery-powered systems. These high-performance, dual/triple-output devices include onboard power-up sequencing, power-good signaling with
delay, digital soft-start, secondary winding control, lowdropout circuitry, internal frequency-compensation networks, and automatic bootstrapping.
Up to 97% efficiency is achieved through synchronous rectification and Maxim’s proprietary Idle Mode™ control scheme. Efficiency is greater than 80% over a 1000:1 load-current range, which extends battery life in system suspend or standby mode. Excellent dynamic response corrects output load transients within five clock cycles.
Strong 1A on-board gate drivers ensure fast external n-channel MOSFET switching.
These devices feature a logic-controlled and synchronizable, fixed-frequency, pulse-width-modulation (PWM) operating mode. This reduces noise and RF interference in sensitive mobile communications and pen-entry applications.
Asserting the SKIP pin enables fixed-frequency mode, for lowest noise under all load onditions.
The MAX8741/MAX8742 include two PWM regulators, adjustable from 2.5V to 5.5V with fixed 5.0V and 3.3V modes. All these devices include secondary feedback regulation, and the MAX8742 contains a 12V/120mA linear regulator. The MAX8741 includes a secondary feedback
input (SECFB), plus a control pin (STEER) that selects which PWM (3.3V or 5V) receives the secondary feedback signal. SECFB provides a method for adjusting the secondary winding voltage regulation point with an external resistor-divider, and is intended to aid in creating
auxiliary voltages other than fixed 12V.
The MAX8741/MAX8742 contain internal output overvoltage- and undervoltage-protection features.

*97% Efficiency
*4.2V to 30V Input Range
*2.5V to 5.5V Dual Adjustable Outputs
*Selectable 3.3V and 5V Fixed or Adjustable Outputs (Dual Mode™)
*12V Linear Regulator
*Adjustable Secondary Feedback (MAX8741)
*5V/50mA Linear-Regulator Output
*Precision 2.5V Reference Output
*Programmable Power-Up Sequencing
*Power-Good (RESET) Output
*Output Overvoltage Protection
*Output Undervoltage Shutdown
*333kHz/500kHz Low-Noise, Fixed-Frequency Operation
*Low-Dropout, 98% Duty-Factor Operation
*2.5mW Typical Quiescent Power (12V Input, Both SMPSs On)
*4μA Typical Shutdown Current

*Notebook and Subnotebook Computers
*PDAs and Mobile Communicators
*Desktop CPU Local DC-DC Converters


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The HA-2556 is a monolithic, high speed, four quadrant, analog multiplier constructed in the Intersil Dielectrically Isolated High Frequency Process.
The voltage output simplifies many designs by eliminating the current-to-voltage conversion stage required for current output multipliers.
The HA-2556 provides a 450V/μs slew rate and maintains 52MHz and 57MHz bandwidths for the X and Y channels respectively, making it an ideal part for use in video systems.
The suitability for precision video applications is demonstrated further by the Y-Channel 0.1dB gain flatness to 5.0MHz, 1.5% multiplication error, -50dB feedthrough and differential inputs with 8μA bias current. The HA-2556 also has low differential gain (0.1%) and phase (0.1°) errors.
The HA-2556 is well suited for AGC circuits as well as mixer applications for sonar, radar, and medical imaging equipment.
The HA-2556 is not limited to multiplication applications only; frequency doubling, power detection, as well as many other configurations are possible.

*High Speed Voltage Output . . . . . . . . . . . . . . . . . 450V/μs
*Low Multiplication Error . . . . . . . . . . . . . . . . . . . . . . . 1.5%
*Input Bias Currents . . . . . . . . . . . . . . . . . . . . . . . . . . .8μA
*5MHz Feedthrough . . . . . . . . . . . . . . . . . . . . . . . . . -50dB
*Wide Y-Channel Bandwidth . . . . . . . . . . . . . . . . . . 57MHz
*Wide X-Channel Bandwidth . . . . . . . . . . . . . . . . . . 52MHz
*VY 0.1dB Gain Flatness . . . . . . . . . . . . . . . . . . . . 5.0MHz
*Pb-free available (RoHS compliant)

*Military Avionics
*Missile Guidance Systems
*Medical Imaging Displays
*Video Mixers
*Sonar AGC Processors
*Radar Signal Conditioning
*Voltage Controlled Amplifier
*Vector Generators

HA9P2556-9, HA9P2556-9Z, HA1-2556-9

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The NPH15S series of DC/DC converters combines ease of application with versatility.
The pin pattern is based on the popular industry standard, but two additional pins may optionally be fitted to provide a variety of features not commonly found on units of this type.
High efficiency enables full rating to be achieved in a small package without heatsinking, and a high surge capability will provide for start-up and transient loads, whilst being thermally protected against sustained overload.
Overload protection of the “constant current” type ensures start-up into complex load conditions.
The copper case achieves efficient heat transfer and screening.
The product range has been recognised by Underwriters Laboratory (UL) to UL 1950 for operational insulation, file number E179522 applies.

* RoHS compliant
* High efficiency to 89%
* Power density up to 2.4W/cm3
* UL 94V-0 package material
* Industry standard pinout
* UL 1950 recognized
* Non latching current limit
* Constant 350kHz frequency
* 1.5kV input to output isolation
* Versatile control options
* Continuous rating to 30W at 40ºC without heatsink
* Operation to zero load
* Protected against load faults
* Internal over temperature protection
* Uses no electrolytic capacitors

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General Description
 The C3038 is a 1/4” color sensor module with digital output.
It uses OmniVision’s CMOS image sensor OV6630.
Combining CMOS technology together with an easy to use digital interface makes C3038 a low cost solution for higher quality video image application.
The digital video port supplies a continuous 8/16 bit-wide image data stream.
All camera functions, such as exposure, gamma, gain, white balance, color matrix, windowing, are programmable through I2C interface.

* 101,376 pixels, CIF/QCIF format
* Small size : 40 x 28 mm
* Lens: f=4.9mm (Optional)
* 8/16 bit video data : ITU601, ITU656, ZV port
* Read out - progressive
* Data format -YCrCb 4:2:2, GRB 4:2:2, RGB
* I2C interface
* Electronic exposure / Gain / White balance control
* Image enhancement - brightness, contrast, gamma, saturation, sharpness, window, etc
* Internal / external synchronization scheme
* Frame exposure / line exposure option
* Wide dynamic range, anti blooming, zero smearing
* 3.3V operation
* Low power dissipation
* Monochrome composite video signal output (50Hz)

Application Example
* Video Conferencing
* PC Multimedia
* Video Phone
* Video Mail
* Still Image
* Machine Vision
* Process control

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 The ZXLD1321 is an inductive DC-DC converter, with an internal switch, designed for driving single or multiple LEDs in series up to a total of 1A output current.
Applications cover commercial environments with input voltages ranging from 1.2V to 12V.
The device employs a variable 'on' and 'off' time control scheme with adjustable peak switch current limiting and supports step-up (Boost) mode and self-powering Bootstrap operating modes, offering higher power efficiency and lower system cost than conventional PFM circuitry.
The device includes the DC-DC converter, a high-side current monitor and an NPN switching transistor to provide an integrated solution offering small PCB size, competitive cost/performance, high power efficiency of DC-DC conversion and maximum LED brightness/reliability.
More importantly, it retains design flexibility to add customer specific features.
The feedback control circuitry inside the ZXLD1321 provides excellent load and current regulation, resulting in very stable LED current over the useful life of the battery and over the full operating temperature range.
The LED current can be adjusted from 100% down to 10% of the set value by applying a dc voltage to the ADJ pin and down to 1% by applying a PWM signal to the ADJ pin.
An onchip LED protection circuit also allows output current to be reduced linearly above a predetermined threshold temperature using an external thermistor at the TADJ pin.
External resistors set nominal average LED current and coil peak current independently.
The device can be shut down by applying a continuous low level dc voltage to the ADJ pin.

• 1.2V to 12V Input voltage range
• Up to 1A output current
• Typical efficiency# >85%
• Bootstrap operation enables input voltage down to 1V
• User-defined thermal control of LED output current using external thermistor
• High output current stability over input voltage and temperature
• 12μA typical standby current
• LED current adjustable from 100% down to 2%
• Adjustable soft-start
• Drives up to 5 white LEDs in series

• High power LED flashlights
• LED back-up lighting
• General LED lighting
• Emergency lighting


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•Operation range : 2.7V~5V
•4 stereo inputs with selectable input gain
•4 independent speaker controls for fader and balance
•Tone controls (treble and bass) and loudness function
•Independent mute function
•Volume control in 1.25 dB/step
•I2C interface
•Components less and good PSRR
•Housed in SOP32 packages

•Portable audio device
•Car stereo audio
•Hi-Fi audio system

The MS6712 is a 4 stereo inputs/4-channel outputs digital control audio processor for the low voltage operation.
Volume, tone (bass and treble), balance (left/right), and fader (front/rear) processor are incorporated into a single chip.
The MS6712 also has the loudness function and selectable input gain. These functions can be built a Hi-Fi audio system easily. All functions are programmable via the serial I2C bus. The default states of the chip as the power is on are: the volume is -78.75dB, the stereo 4 is selected, all the speakers are mute and the gains of the input stage, the bass and the treble are 0dB.


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Achievement of 65.4W Output Power at 14.5GHz

TOKYO--Toshiba Corporation today announced that it has developed a gallium nitride (GaN) power field effect transistor (FET) for the Ku-band (12GHz to 18GHz) frequency range that achieves an output power of 65.4W at 14.5GHz, the highest level of performance yet reported at this frequency band. The main application of the new transistor will be in base stations for satellite microwave communications, which carry high-capacity signals, including high-definition broadcasts. Toshiba plans to start sample shipment of the new power FET by the end of 2007 and to go into mass production by the end of March 2008.

Advances in Ku-band microwave amplifiers focus on replacing the electron tubes conventionally used at this bandwidth with semiconductors, particularly GaN devices, which offer advantageous high power characteristics at higher microwave frequencies.

The new power FET has a high electron mobility transistor (HEMT) structure that Toshiba has optimized for the Ku-band. The company replaced source wire bonding with via hole technology*1 to reduce parasitic inductance, and also improved overall design of the matching circuit for practical application at Ku-band frequencies.

Demand for GaN power FET for radars and satellite microwave communications base stations is growing steadily, both for new equipment and replacement of electron tubes. Toshiba will meet this demand with early commercialization of its new Ku-band power FET.

Full details of the new GaN power FET will be presented at the European Microwave Conference 2007, in Munich, Germany from October 8 to 12.

Background and development aims

Ever increasing communications flows in satellite microwave communications are driving demand for higher output power in signal amplifying devices, as is development of more powerful radar systems. Demand is particularly strong for GaN devices, which offer advantages over conventional gallium arsenide devices in heat dissipation and high power performance characteristics at high frequency.

Toshiba has taken the lead in applying GaN technology to power FET for microwave frequency applications. The company directed its initial efforts to the development and marketing of power FET for the 6GHz band (2005) and 9.5GHz (2006) band, and developed devices that achieved the worlds highest output power at those frequencies. The company has now extended its line-up to 14.5GHz. Toshiba will continue development for the18GHz to 30GHz frequencies (Ka-band) and beyond.

Outline of development

1. Device technology
Toshiba achieved the outstanding performance of the new FET by optimizing the composition and thickness of the AlGaN and GaN layers formed on the highly heat-conductive silicon carbide (SiC) substrate of the HEMT structure. To assure high performance at Ku-band frequencies, Toshiba has applied a shorter gate length of below 0.3 microns, and optimized the shape of each electrode and element configuration to enhance heat dissipation.

2. Process technology
To reduce the parasitic inductance and improve higher frequency performance, Toshiba developed a unique technology for forming via holes, which pass from the surface source electrode through the chip to the ground. Success in forming via holes in SiC substrate, recognized as a highly demanding process, is a breakthrough in development of the new FET.

As gate lengths shorten, suppression of current leakage at the gate electrode is essential for achieving high level performance. A unique overcoat process applied around each gate electrode contributes to suppressing gate leakage to 1/30 that of Toshiba's conventional approaches. Electron beam exposure technology is applied in order to secure stable processing of gate lengths below 0.3 micron meters.

Key characteristics

Key characteristics

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