Description
The dual channel 5 Mb/s SFH6731 and SFH6732 high speed optocoupler consists of a GaAlAs infrared emitting diode, optically coupled with an integrated photo detector. The detector incorporates a Schmitt-Trigger stage for improved noise immunity. A Faraday shield provides a common mode transient immunity of 1000 V/μs at VCM = 50 V for SFH6731 and 500 V/μs at VCM = 300 V for SFH6732.
The SFH6731 and SFH6732 uses an industry standard DIP-8 package. With standard lead bending, creepage distance and clearance of ≥ 7.0 mm with lead bending options 6, 7 and 9 ≥ 8.0 mm are achieved.

Features
*Data Rate 5 MBits/s (2.5 MBit/s over Temperature)
*Buffer
*Isolation Test Voltage, 5300 VRMS
*TTL, LSTTL and CMOS Compatible
*Internal Shield for Very High Common Mode Transient Immunity
*Wide Supply Voltage Range (4.5 to 15 V)
*Low Input Current (1.6 mA to 5.0 mA)
*Specified from 0 °C to 85 °C
*Lead-free component
*Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Applications
*Industrial Control
*Replace Pulse Transformers
*Routine Logic Interfacing
*Motion/Power Control
*High Speed Line Receiver
*Microprocessor System Interfaces
*Computer Peripheral Interfaces

SFH6731, SFH6732, SFH6732-X007

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DESCRIPTION
The 110 °C rated SFH617A (DIP) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal transmission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of > 8.0 mm are achieved with option 6. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Specifications subject to change.

FEATURES
*Operating temperature from - 55 °C to + 110 °C
*Good CTR linearity depending on forward current
*Isolation test voltage, 5300 VRMS
*High collector emitter voltage, VCEO = 70 V
*Low saturation voltage
*Fast switching times
*Low CTR degradation
*Temperature stable
*Low coupling capacitance
*End stackable, 0.100" (2.54 mm) spacing
*High common mode interference immunity
*Lead (Pb)-free component
*Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS
*AC adapter
*SMPS
*PLC
*Factory automation
*Game consoles

SFH617A-1, SFH617A-2, SFH617A-3, SFH617A-4

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DESCRIPTION
The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-pin, resp. 16-pin plastic dual inline package.
The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements.

FEATURES
*CNY74-2H includes 2 isolator channels
*CNY74-4H includes 4 isolator channels
*Isolation test voltage VISO = 5000 VRMS
*Test class 25/100/21 DIN 40 045
*Low coupling capacitance of typical 0.3 pF
*Current transfer ratio (CTR) of typical 100 %
*Low temperature coefficient of CTR
*Wide ambient temperature range
*Coupling system U
*Lead (Pb)-free component
*Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS
*Galvanically separated circuits, non-interacting switches

CNY74-4H

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Description
The H11AG1M device consists of a Gallium-Aluminum- Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications.

Features
*High efficiency low degradation liquid epitaxial IRED
*Logic level compatible, input and output currents, with CMOS and LS/TTL
*High DC current transfer ratio at low input currents (as low as 200μA)
*Underwriters Laboratory (UL) recognized File #E90700, Volume 2
*IEC 60747-5-2 approved (ordering option V)
 
Applications
*CMOS driven solid state reliability
*Telephone ring detector
*Digital logic isolation


H11AG1M, H11AG1SM, H11AG1SR2M, H11AG1TM, H11AG1VM, H11AG1TVM, H11AG1SVM, H11AG1SR2VM

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DESCRIPTION
The SFH6345 is an optocoupler with a GaAlAs infrared emitting diode, optically coupled to an integrated photo detector consisting of a photo diode and a high speed transistor in a DIP-8 plastic package.
The device is similar to the 6N135 but has an additional faraday shield on the detector which enhances the input-output dV/dt immunity.
Signals can be transmitted between two electrically separated circuits up to frequencies of 2 MHz.
The potential difference between the circuits to be coupled should not exceed the maximum permissible reference voltages.

FEATURES
* Direct replacement for HCPL 4503
* High speed optocoupler without base connection
* Isolation test voltage: 5300 VRMS
* GaAlAs emitter
* Integrated detector with photo diode and transistor
* High data transmission rate: 1.0 MBit/s
* TTL compatible
* Open collector output
* Good CTR linearity relative to forward current
* Field effect stable
* Low coupling capacitance
* Very high common mode transient immunity dV/dt: ≥ 15 kV/μs at VCM = 1500 V
* Lead (Pb)-free component
* Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS
* Data communications
* IGBT drivers
* Programmable controllers

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Features
• Isolation materials according to UL 94-VO
• Pollution degree 2 (DIN/VDE 0110 resp. IEC 60664)
• Climatic classification 55/100/21 (IEC 60068 part 1)
• Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common
Mode Rejection
• IFT offered into 4 groups
• Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak
• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)
• Rated recurring peak voltage (repetitive) VIORM = 600 VRMS
• Thickness through insulation ≥ 0.75 mm
• Creepage current resistance according to VDE 0303/IEC 60112 Comparative Tracking
Index: CTI = 275
• Lead-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Agency Approvals
• UL1577, File No. E76222 System Code C, Double Protection
• BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and
7402
• DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending
• FIMKO (SETI): EN 60950, Certificate No. 12398

Applications
Monitors
Air conditioners
Line Switches
Solid state relay
Microwave

K3023P
K3036P
K3020PG
K3021PG

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Features
• 5000Vrms Input/Output Isolation
• Small 4-Pin Package
• 350VP Breakdown Voltage
• Machine Insertable, Wave Solderable
• Surface Mount Tape & Reel Version Available

Applications
• Telecom Switching
• Tip/Ring Circuits
• Modem Switching (Laptop, Notebook, Pocket Size)
• Loop Detect
• Ringing Detect
• Current Sensing

Description
The CPC1301 is an optocoupler with a unidirectional input and a high-voltage Darlington output. Light output from the highly efficient GaAlAs infrared LED activates the optically coupled silicon NPN photo-Darlington output transistor. The input LED and the output transistor are separated by a 5000Vrms isolation barrier. With an LED current of only 1mA, a current transfer ratio of 1000% to 8000% is guaranteed at the collector of the 350V Darlington output transistor.
The CPC1301's low input current, high current transfer ratio, high output voltage capability, and large isolation barrier rating make it ideal for many applications such as telecom, industrial, and power control.

Approvals
• UL Recognized: File # Pending
• CSA Certified: File Number 156092 (LR 43639)
• EN/IEC 60950-1 compliant

CPC1301G
CPC1301GR
CPC1301GRTR

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Features
• Isolation Test Voltage 5300 VRMS
• Long Term Stability
• Industry Standard Dual-in-Line Package
• Lead-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Agency Approvals
• Underwriters Lab File #E52744 System Code H or J
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
• BSI IEC60950 IEC60065
• FIMKO

Description
The CNY17 is an optically coupled pair consisting of a Gallium Arsenide infrared emitting diode optically coupled to a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The CNY17 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation.

CNY17-1 CNY17-2 CNY17-3 CNY17-1X007 CNY17-1X009 CNY17-4X009

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DESCRIPTION
IL66, ILD66, and ILQ66 are optically coupled isolators employing Gallium Arsenide infrared emitters and silicon photodarlington detectors. Switching can be accomplished while maintaining a high degree of isolation between driving and load circuits, with no crosstalk between channels.

FEATURES
• Internal RBE for High Stability
• Current Transfer Ratio is Tested at 2.0 mA and 0.7 mA Input IL/ILD/ILQ66 Series:
  - 1, 100% min. at IF=2mA, VCE=10 V
  - 2, 300% min. at IF=2mA, VCE=10 V
  - 3, 400% min. at IF=0.7mA, VCE=10 V
  - 4, 500% min. at IF=2mA, VCE=5 V
• Four Available CTR Categories per Package Type
• BVCEO >60 V
• Standard DIP Packages
• Underwriters Lab File #E52744
• VDE 0884 Available with Option 1V

Maximum Ratings
Emitter(Each Channel)
Peak Reverse Voltage........................................ 6 V
Continuous Forward Current......................... 60 mA
Power Dissipation at 25°C......................... 100 mW
Derate Linearly from 25°C ................... 1.33 mW/°C
Detector(Each Channel)
Power Dissipation at 25°C Ambient........... 150 mW
Derate Linearly from 25°C ..................... 2.0 mW/°C

Package
Isolation Test Voltage
    (t=1 sec.)........................................5300 VACRMS
Total Package Power Dissipation at 25°C
    IL66.......................................................... 250 mW
    ILD66 ....................................................... 400 mW
    ILQ66 ....................................................... 500 mW
Derate Linearly from 25°C
    IL66...................................................... 3.3 mW/°C
    ILD66 ................................................. 5.33 mW/°C
    ILQ66 ................................................. 6.67 mW/°C
Creepage.................................................7 min mm
Clearance ................................................7 min mm
Comparative Tracking Index..............................175
Isolation Resistance
VIO=500 V, TA=25°C................................>=10^12 Ohm
VIO=500 V, TA=100°C..............................>=10^11 Ohm
Storage Temperature ................... –55°C to +125°C
Operating Temperature................ –55°C to +100°C
Lead Soldering Time at 260°C ....................10 sec.

IL66 / ILD66 / ILQ 66

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