Semicoa Semiconductors offers
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N2218AJ)
• JANTX level (2N2218AJX)
• JANTXV level (2N2218AJV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV
• Radiation testing (total dose) upon request

Applications
• General purpose
• Low power
• NPN silicon transistor

Features
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 0400
• Reference document:
MIL-PRF-19500/251

Benefits
• Qualification Levels: JAN, JANTX, and JANTXV
• Radiation testing available

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Features
• Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators
• High Current Gain Bandwidth Product
• Ideal for Mixer and RF Amplifier Applications with collector currents in the 100μA - 30 mA Range
• Lead Free/RoHS Compliant (Note 3)

Mechanical Data
• Case: SOT-23 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe).
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)

MMBTH24-7-F

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Features
* Epitaxial Planar Die Construction
* Complementary PNP Types Available (DDTA)
* Built-In Biasing Resistors, R1R2
* Lead Free/RoHS Compliant (Note 1)
* "Green" Device, Note 2 and 3

Mechanical Data
* Case: SC-59
*Case Material: Molded Plastic, "Green" Molding Compound, Note 3. UL Flammability Classification
* Rating 94V-0
* Moisture Sensitivity: Level 1 per J-STD-020C
* Terminals: Solderable per MIL-STD-202, Method 208
* Lead Free Plating (Matte Tin Finish annealed over Copper leadframe).
* Terminal Connections: See Diagram
* Marking: Date Code and Type Code (See Table Below & Page 3)
* Ordering Information (See Page 3)
* Weight: 0.006 grams (approximate)

DDTC113ZKA
DDTC123YKA
DDTC123JKA
DDTC143XKA
DDTC143FKA
DDTC143ZKA
DDTC114YKA
DDTC114WKA
DDTC124XKA
DDTC144VKA
DDTC144WKA

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 The CA3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially connected pair.
The transistors of the CA3046 are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits. However, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching.

Features
* Two Matched Transistors
- VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV
- IIOMatch. . . . . . . . . . . . . . . . . . . . . . . . . . . . .2µA (Max)
* Low Noise Figure. . . . . . . . . . . . . . . . 3.2dB (Typ) at 1kHz
* 5 General Purpose Monolithic Transistors
* Operation From DC to 120MHz
* Wide Operating Current Range
* Full Military Temperature Range

Applications
• Three Isolated Transistors and One Differentially
-Connected Transistor Pair for Low Power Applications at Frequencies from DC Through the VHF Range
• Custom Designed Differential Amplifiers
• Temperature Compensated Amplifiers
• See Application Note, AN5296 “Application of the CA3018 Integrated-Circuit Transistor Array” for Suggested

CA3046M CA3046M96

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General features
State-of-the-art technology:
– Diffused collector “enhanced generation”
More stable performance versus operating temperature variation
Low base drive requirement
Tighter hFE range at operating collector current
Fully insulated power package U.L. compliant
Integrated free wheeling diode
In compliance with the 2002/93/EC European Directive

Description

 The MD2103DFX is manufactured using Diffused Collector in Planar technology adopting new and enhanced high voltage structure.
 The new MD product series show improved silicon efficiency briging updated performance to
the horizontal deflection stage.

Applications

Horizontal deflection output for TV

MD2103DFX

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Features
HIGH VOLTAGE CAPABILITY
  LOW SPREAD OF DYNAMIC PARAMETERS
  MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
  VERY HIGH SWITCHING SPEED

Applications
ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING (277V PUSHPULL
AND 347V HALF BRIDGE TOPOLOGIES)

Description
 The BUL7216 is a new device manufactured using Diffused Collector technology to enhance
switching speeds and tight hFE while maintaining the wide RBSOA.

BUL7216

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DESCRIPTION
The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.

FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complementary to S8550

S8050

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DESCRIPTION
These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .

FEATURES
* Reverse Biased SOA with Inductive Load @ Tc=100℃
* Inductive Switching Matrix 0.5 ~ 1.5 Amp, 25 and 100℃ Typical tc = 290ns @ 1A, 100℃.
* 700V Blocking Capability

APPLICATIONS
* Switching Regulator’s, Inverters
* Motor Controls
* Solenoid/Relay drivers
* Deflection circuits

MJE13003L-A-TA3-F-T MJE13003L-B-TA3-F-T MJE13003L-C-TA3-F-T
MJE13003L-D-TA3-F-T MJE13003L-E-TA3-F-T MJE13003L-F-TA3-F-T

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 The MJE/MJF13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.

* VCEO(sus) 400 V
* Reverse Bias SOA with Inductive Loads @ TC = 100°C
* 700 V Blocking Capability
* SOA and Switching Applications Information
* Two Package Choices: Standard TO–220 or Isolated TO–220
* MJF13007 is UL Recognized to 3500 VRMS, File #E69369

MJF13007

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DESCRIPTION
 The BD135 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits.
 The complementary PNP types are BD136 and BD140 respectively.

BD139

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