DESCRIPTION
The 11N40 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

FEATURES
*RDS(ON) = 0.48Ω @VGS = 10 V
*Ultra low gate charge ( typical 27 nC )
*Low reverse transfer capacitance ( CRSS = typical 20 pF )
*Fast switching capability
*Avalanche energy specified
*Improved dv/dt capability, high ruggedness

11N40-TF3-T, 11N40L-TF3-T, 11N40G-TF3-T

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DESCRIPTION
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.

FEATURES
*Fast switching with low EMI
*Low trr for high reliability
*Ultra low Crss for improved noise immunity
*Low gate charge
*Avalanche energy rated
*RoHS compliant

TYPICAL APPLICATIONS
*ZVS phase shifted and other full bridge
*Half bridge
*PFC and other boost converter
*Buck converter
*Single and two switch forward
*Flyback

APT26F120L

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DESCRIPTION
The SPN1443A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

FEATURES
*30V/2.8A,RDS(ON)= 95mΩ@VGS=10V
*30V/2.3A,RDS(ON)= 105mΩ@VGS=4.5V
*30V/1.5A,RDS(ON)= 135mΩ@VGS=2.5V
*Super high density cell design for extremely low RDS (ON)
*Exceptional on-resistance and maximum DC current capability
*SOT-353 ( SC–70 ) package design

APPLICATIONS
*Power Management in Note book
*Portable Equipment
*Battery Powered System
*DC/DC Converter
*Load Switch
*DSC
*LCD Display inverter

SPN1443AS35RG

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DESCRIPTION
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.

FEATURES
*Fast switching with low EMI
*Low trr for high reliability
*Ultra low Crss for improved noise immunity
*Low gate charge
*Avalanche energy rated
*RoHS compliant

TYPICAL APPLICATIONS
*ZVS phase shifted and other full bridge
*Half bridge
*PFC and other boost converter
*Buck converter
*Single and two switch forward
*Flyback

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DESCRITION
This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.

FEATURES
*Fast switching with low EMI
*Low trr for high reliability
*Ultra low Crss for improved noise immunity
*Low gate charge
*Avalanche energy rated
*RoHS compliant

TYPICAL APPLICATIONS
*ZVS phase shifted and other full bridge
*Half bridge
*PFC and other boost converter
*Buck converter
*Single and two switch forward
*Flyback

APT7F120S

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Description
Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used i n Class AB for PCN - PCS/cel lular radi o and WLL applications.
*Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 950 mA
Pout = 22 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
- Power Gain - 14.5 dB
- Drain Efficiency - 25.5%
- IM3 @ 2.5 MHz Offset - -37 dBc in 1.2288 MHz Bandwidth
- ACPR @ 885 kHz Offset - -51 dBc in 30 kHz Bandwidth
*Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power

Features
*Characterized with Series Equivalent Large-Signal Impedance Parameters
*Internally Matched for Ease of Use
*Qualified Up to a Maximum of 32 VDD Operation
*Integrated ESD Protection
*N Suffix Indicates Lead-Free Terminations
*Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
*200°C Capable Plastic Package
*RoHS Compliant
*In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MRF6S19100NBR1, MRF6S19100N

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Description
This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.

Features
*Avalanche Energy Specified
*Fast Switching
*Simple Drive Requirements

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General Description
The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications).

Features
*VDS (V) = 30V
*ID = 5.7A (VGS = 10V)
*RDS(ON) < 26.5mΩ (VGS = 10V)
*RDS(ON) < 32mΩ (VGS = 4.5V)
*RDS(ON) < 48mΩ (VGS = 2.5V)

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Description
This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.

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DESCRIPTION
The UTC 7N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.

FEATURES
* RDS(ON) = 1.2Ω @VGS = 10 V
* Ultra low gate charge (typical 29 nC )
* Low reverse transfer Capacitance ( CRSS = typical 16pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness

7N60L-x-TA3-T
7N60L-x-TF3-T

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