Application

• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control

Features


• Power MOS V® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration

Benefits


• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• RoHS Compliant
TAG Module, MOSFET

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Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control

Features
• Power MOS V® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Fast intrinsic diode
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant

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Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control


Features
• Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
- Symmetrical design
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a phase leg of twice the current capability
• RoHS compliant
TAG IGBT, Module, NPT

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Features
■ Bluetooth specification V.1.2 compliant
■ Supports USB (1.1) /UART/PCM (Pulse Code Modulation) interfaces
■ Bluetooth protocol layers support up to HCI
■ Output power class 2
■ Optimized link manager and control
■ Working distance up to 10 meters
■ Support wireless LAN coexistence
■ 3.3V single supply voltage
■ CE Compliant
– Safety EN60950-1 (2001)
– EMC EN301 489 17V1.2.1
– Radio ES 300 328 V1.6.

Applications
■ Personal computers accessories
■ Laptop PCs and accessories
■ Hand held devices and accessories
■ Internet access points
■ Industrial controls

Description
 SPG Bluetooth Class 2 Module is a highly integrated module for fast implementation in various applications to enable electronic devices to communicate wirelessly with other Bluetooth
enabled devices.

 It is a true saver for manufacturers to provide time-to-market products.
With different types of interface, (USB/UART/PCM/SPI/I²C), the module can be used in applications such as Notebook PCs and accessories, PDA, Access Points, Headphones
and PC peripherals, etc.

GS-BT2416C2

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GENERAL DESCRIPTION
 The HMN5128JV Nonvolatile SRAM is a 4,194,304-bit static RAM organized as 524,288 bytes by 8 bits. The HMN5128JV has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write cycles of standard SRAM and integral control circuitry which constantly monitors the single 3.3V supply for an out-oftolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the memory until after Vcc returns valid and write protection is unconditionally enabled to prevent garbled data.
 In addition the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is switched on to sustain the memory until after VCC returns valid. The HMN5128JV uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM.

FEATURES
* Access time : 70, 85 ns
* High-density design : 4Mbit Design
* Battery internally isolated until power is applied
* Industry-standard 34-pin 512K x 8 pinout
* Unlimited write cycles
* Data retention in the absence of VCC
* 10-years minimum data retention in absence of power
* Automatic write-protection during power-up/power-down cycles
* Data is automatically protected during power loss
* Conventional SRAM operation; unlimited write cycles

FUNCTIONAL DESCRIPTION
 The HMN5128JV executes a read cycle whenever /WE is inactive(high) and /CE is active(low). The address specified by the address inputs(A0-A18) defines which of the 524,288 bytes of data is accessed. Valid data will be available to the eight data output drivers within tACC (access time) after the last address input signal is stable.
 
 When power is valid, the HMN5128JV operates as a standard CMOS SRAM. During power-down and power-up cycles, the HMN5128JV acts as a nonvolatile memory, automatically protecting and preserving the memory contents.
The HMN5128JV is in the write mode whenever the /WE and /CE signals are in the active (low) state after address inputs are stable. The later occurring falling edge of /CE or /WE will determine the start of the write cycle. The write cycle is terminated by the earlier rising edge of /CE or /WE. All address inputs must be kept valid throughout the write cycle. /WE
must return to the high state for a minimum recovery time (tWR) before another cycle can be initiated. The /OE control signal should be kept inactive (high) during write cycles to avoid bus contention. However, if the output bus been enabled (/CE and /OE active) then /WE will disable the outputs in tODW from its falling edge.

 The HMN5128JV provides full functional capability for Vcc greater than 3.0 V and write protects by 2.8 V nominal. Powerdown/ power-up control circuitry constantly monitors the Vcc supply for a power-fail-detect threshold VPFD. When VCC falls below the VPFD threshold, the SRAM automatically write-protects the data. All inputs to the RAM become “don’t care” and all outputs are high impedance. As Vcc falls below approximately 2.5 V, the power switching circuit connects the lithium energy soure to RAM to retain data. During power-up, when Vcc rises above approximately 2.5 volts, the power switching circuit connects external Vcc to the RAM and disconnects the lithium energy source. Normal RAM operation can resume after Vcc exceeds 3.0 volts.

HMN5128JV-70
HMN5128JV-85
TAG Module, SRAM

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FEATURES
*Low Forward Voltage Drop
* Isolated Copper Baseplate

APPLICATIONS
* Inverters
* Motor Controllers

 The Powerline range of modules includes half bridge, chopper, bi-directional, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 3600A.

 The DIM375WHS06-S000 is a half bridge 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion.
 
 The IGBT has a wide reverse bias safe operating area RBSOA) for ultimate reliability in demanding applications. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

 Typical applications include dc motor drives, ac pwm drivesand ups systems..

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Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control

Features
• Power MOS V® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a phase leg of three times the current capability
• Module can be configured as a three phase bridge
• Module can be configured as a boost followed by a full bridge
• RoHS Compliant

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Features
• 500V 3.0A 3-phase FRFET inverter including high voltage integrated circuit (HVIC)
• 3 divided negative dc-link terminals for inverter current sensing applications
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
• Extended VB pin for PCB isolation

General Description
 FSB50450T is a tiny smart power module (SPM) based on FRFET technology as a compact inverter solution for small power motor drive applications such as fan motors and water suppliers. It is composed of 6 fast-recovery MOSFET (FRFET), and 3 half-bridge HVICs for FRFET gate driving. FSB50450T provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs FRFET as a power switch, it has much better ruggedness and larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution.

 The package is optimized for the thermal performance and compactness for the use in the built-in motor application and any other application where the assembly space is concerned. FSB50450T is the most solution for the compact inverter providing the energy efficiency, compactness, and low electromagnetic interference.

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Features
• Compact Coaxial Package
• Strained Multi Quantum Well (SMQW) Laser Chip
• Low Thresholds Current and Operating Currents
• Wide Operating Temperature -40°C to +85°C
• Optical Power May Be Customized up to 2 mW
• Modulation Capability up to 622 Mb/s
• Convenient Variety of Pinout and Mounting Flange Options

Applications
• Telecommunications
• Fiber in the Loop
• Inter/Intra Office
• SONET/SDH
• Datacommunications
• Switches

Description
 Products in the LST2X2X family are compact coaxial pigtailed laser transmitters, operating in
the 1300 nm wavelength region and coupling light to single mode fiber. They are designed for use in short, medium and long distance networks with bit rates up to 622 Mb/s.
 The device features a high reliability SMQW laser diode and rear facet monitor photodiode.
These are electrically connected to four pins in an industrystandard configuration.
 Environmental performance is designed to be compatible with the requirements of Bellcore’s
TA-NWT-000983 document.
 Options within the LST2X2X family offer pinouts and pin rotational orientations designed to match existing products available on the market. We also offer a comprehensive range of alternative mounting flanges including a dual in line option.
 If the specific arrangement or performance you require is not listed, please contact your local
representative as our highly flexible design and manufacturing processes allow both physical and electro-optical customization to meet your needs.

LST2525--B-FP LST2825--B-FP LST2925--B-FP LST2527--B-FP LST2827--B-FP
LST2927--B-FP LST2525-S4-B-FP LST2825-S4-B-FP LST2925-S4-B-FP LST2527-S4-B-FP
LST2827-S4-B-FP LST2927-S4-B-FP
TAG laser, Module

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