DISCRIPTION
The Powerline range of high power modules includes half bridge, chopper, dual, single and bidirectional switch configurations covering voltages from 600V to 3300V and currents up to 3600A.
The DIM200WBS12-A000 is a bi-directional 1200V, n channel enhancement mode, insulated gate
bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10ms short circuit withstand.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.

FEATURES
*10 ms Short Circuit Withstand
*Non Punch Through Silicon
*Isolated Copper Baseplate
*Lead Free construction

APPLICATIONS
*Matrix Converters
*Brushless Motor Controllers
*Frequency Converters

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Description
The laser module, intended for OC-192/STM-64 DWDM applications, consists of a DFB laser with integrated absorption modulator mounted in a high frequency package which includes an isolator. Laser wavelengths are available according to the ITU-T grid.

Key Features
*1550 nm DFB CW source monolithicly integrated with an Electro Absorptionmodulator (EA)
*Hermetic, 7 pin butterfly package
*Single-mode fiber pigtail
*12 GHz typical bandwidth
*-3 dBm output power
*Multisourced footprint

Applications
*DWDM SDH STM-64 LH
*DWDM SONET OC-192 LR

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Product Overview
This DC-DC converter module uses 2nd Generation power processing, control and packaging technologies to provide the performance, flexibility and cost effectiveness expected of a mature power component.
For example, a plated-cavity core transformer couples widely separated primary and secondary windings, resulting in low in-toout parasitic capacitance and noise.
High frequency ZCS/ZVS switching, advanced power semiconductor packaging and thermal management provide high power density with low temperature gradients. Extensive use of silicon integration results in 1/3 the part count of a 1st Generation converter.

Features
*DC input range: 18 - 36V
*Input surge withstand: 50V for 100ms
*DC output: 12V
*Programmable output: 10 to 110%
*Regulation: ±0.2% no load to full load
*Efficiency: 85.5%
*Maximum operating temperature: 100°C at full load
*Power density: 79W/cubic inch
*Height above board: 0.43 in. (10,9 mm)
*Parallelable, with N+M fault tolerance
*Low noise ZCS/ZVS architecture

Typical Applications
*telecommunications, process control and distributed power systems

V24A12C500A, V48A12C500A, V300A12C500A, V375A12C500A

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Product Description
Sirenza Microdevices’ XD010-51S-D4F 15W power module is a robust 2-stage Class A/AB amplifier module is a driver stage in many 900 MHz applications. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit operates from a single voltage supply and has internal temperature compensation of the bias voltage to ensure stable performance over the full temperature range. It is a drop-in, no-tune solution for medium power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. It is internally matched to 50 ohms.

Product Features
*Available in RoHS compliant packaging
*50 W RF impedance
*15W Output P1dB
*Single Supply Operation : Nominally 28V
*High Gain: 32 dB at 915 MHz
*High Efficiency: 30% at 915 MHz
*Robust 8000V ESD (HBM), Class 3B
*XeMOS II LDMOS FETS
*Temperature Compensation

Applications
*RFID
*Point to Multipoint data radio systems

XD010-51S-D4FY

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GENERAL DESCRIPTION
The HSD16M72D9A is a 16M x 72 bit Synchronous Dynamic RAM high density memory module. The module consists of nine CMOS 4M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 168-pin glass-epoxy substrate. Two 0.33uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD16M72D9A is a DIMM(Dual in line Memory Module) and is intended for mounting into 168-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC
power supply and all inputs and outputs are LVTTL-compatible.

FEATURES
*Part Identification
- HSD16M72D9A-F/10L : 100MHz (CL=3)
- HSD16M72D9A-F/10 : 100MHz (CL=2)
- HSD16M72D9A-F/13 : 133MHz (CL=3)
- HSD16M72D9A-F/12 : 125MHz (CL=3)
- F means Auto & Self refresh with Low-Power (3.3V)
*Burst mode operation
*Auto & self refresh capability (4096 Cycles/64ms)
*LVTTL compatible inputs and outputs
*Single 3.3V ±0.3V power supply
*MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
*All inputs are sampled at the positive going edge of the system clock
*The used device is 4M x 8bit x 4Banks SDRAM

HMD16M72D9A-13, HMD16M72D9A-12, HMD16M72D9A-10L, HMD16M72D9A-10
HMD16M72D9A-F13, HMD16M72D9A-F12, HMD16M72D9A-F10L, HMD16M72D9A-F10
TAG DRAM, ECC, Module

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DESCRIPTION
The DFM600BXS17-A000 is a single 1700V, fast recovery diode (FRD) module. Designed for low
power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion.
Fast switching times and low reverse recovery losses allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.

FEATURES
*Low Reverse Recovery Charge
*High Switching Speed
*Low Forward Voltage Drop
*Isolated Copper Base plate

APPLICATIONS
*Chopper Diodes
*Boost and Buck Converters
*Free-wheel Circuits
*Snubber Circuit
*Resonant Converters
*Multi-level Switch Inverters



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Product Overview
This DC-DC converter module uses 2nd Generation power processing, control and packaging technologies to provide the performance, flexibility and cost effectiveness expected of a mature power component.
For example, a plated-cavity core transformer couples widely separated primary and secondary windings, resulting in low in-toout parasitic capacitance and noise.
High frequency ZCS/ZVS switching,
advanced power semiconductor packaging and thermal management provide high power density with low temperature gradients. Extensive use of silicon integration results in 1/3 the part count of a 1st Generation converter.

Features
*DC input range: 36 - 75V
*Input surge withstand: 100V for 100ms
*DC output: 3.3V
*Programmable output: 10 to 110%
*Regulation: ±0.3% no load to full load
*Efficiency: 79.5%
*Maximum operating temperature: 100°C at full load
*Power density: 52W/cubic inch
*Height above board: 0.43 in. (10,9 mm)
*Parallelable, with N+M fault tolerance
*Low noise ZCS/ZVS architecture

Typical Applications: telecommunications and distributed power systems

V48A3V3C264A, V24A12C500A, V48A12C500A

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DESCRIPTION
The DS2251T is an 8051 compatible microcontroller module based on nonvolatile RAM technology. It is designed for systems that need large quantities of nonvolatile memory. Like other members of the Secure Microcontroller family, it provides full compatibility with the 8051 instruction set, timers, serial port, and parallel I/O ports. By using NVRAM instead of ROM, the user can program, then reprogram the microcontroller while in–system. The application software can even change its own operation. This allows frequent software upgrades, adaptive programs, customized systems, etc. In addition, by using NVRAM, the DS2251T is ideal for data logging applications. The powerful real time clock includes interrupts for time stamp and date. It keeps time to one hundredth of second using its on–board 32 KHz crystal.
The DS2251T provides the benefits of NVRAM without using I/O resources. Between 32K bytes and 128K bytes of on–board NVRAM are available. A non–multiplexed Byte–wide address and data bus is used for memory access. This bus, which is available at the connector, can perform all memory access and also provides decoded chip enables for off–board memory mapped peripherals. This leaves the 32 I/O port pins free for application use.
The DS2251T provides high–reliability operation in portable systems or systems with unreliable power. These features include the ability to save the operating state, Power–fail Reset, Power–fail Interrupt, and Watchdog Timer. All nonvolatile memory and resources are maintained for over 10 years at room temperature in the absence of power.
A user loads programs into the DS2251T via its on–chip Serial Bootstrap Loader. This function supervises the loading of software into NVRAM, validates it, then becomes transparent to the user. Software is stored in on–board CMOS SRAM. Using its internal Partitioning, the DS2251T can divide a common RAM into user selectable program and data segments. This Partition can be selected at program loading time, but can be modified anytime later. The microprocessor will decode memory access to the SRAM, access memory via its Byte–wide bus and write–protect the memory portion designated as program (ROM).

FEATURES
*8051 compatible microcontroller adapts to its task
– 32K, 64K, or 128K bytes of nonvolatile SRAM for program and/or data storage
– In–system programming via on–chip serial port
– Capable of modifying its own program or data memory in the end system
– Provides separate Byte–wide bus for peripherals
– Performs CRC–16 check of NVRAM memory
*High–reliability Operation
– Maintains all nonvolatile resources for over 10 years in the absence of power
– Power–fail reset
– Early Warning Power–fail Interrupt
– Watchdog Timer
– Lithium backed memory remembers system state
– Precision reference for power monitor
*Fully 8051 Compatible
– 128 bytes scratchpad RAM
– Two timer/counters
– On–chip serial port
– 32 parallel I/O port pins
*Permanently powered real time clock

DS2251T–32–16, DS2251T–64–16, DS2251T–128–16

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Product Description
The Tritium III PAD Module ™ is an integrated 3V Linear Power Amplifier, Duplexer and Transmit Filter Module including a highly accurate Output Power Detector designed for mobile UMTS handset applications, supporting HSUPA operation with transmission data-rates up to 10Mb/s.
It features 2 output power modes, additional continuous bias in low power mode, low off and standby currents, and a separate pin for module enable. RF input and output matching is included within the module; therefore, minimal external circuitry is required.
Tritium III gives excellent RF performance with low current consumption resulting in longer talk times in portable applications. The tiny 7x4x1.1 mm³ surface mount package is ideal for new generation slim, small and light phones.

Features
*Handset Tritium III™ (PA-Duplexer) Module for UMTS Band I (IMT2100 band)
*Specified for HSUPA Modulation (Transmission Data-Rates up to 10Mb/s)
*Integrates Power Amplifier, Highly Accurate Output Power Detector, Transmit Filter and Duplexer
*No Regulated Voltage Required
*Separate ‘Module Enable’ Pin
*All RF Ports Matched to 50 Ω
*Low Current Consumption: – 2 Power Modes
– Continuous Bias in Low Power Mode – Extremely Low Idle Current (15mA typ.) in Low Power Mode
*Compatible for Low Collector Voltage Operation with DC-DC-Converters

Applications
*3G UMTS Handsets and Data-Cards
TAG Module, WCDMA

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DESCRIPTION
This DC-DC converter module uses 2nd Generation power processing, control and packaging technologies to provide the performance, flexibility and cost effectiveness expected of a mature power component. For example, a plated-cavity core transformer couples widely separated primary and secondary windings, resulting in low in-toout parasitic capacitance and noise.
High frequency ZCS/ZVS switching, advanced power semiconductor packaging and thermal management provide high power density with low temperature gradients. Extensive use of silicon integration results in 1/3 the part count of a 1st Generation converter.

Features
*DC input range: 36 - 75V
*Input surge withstand: 100V for 100ms
*DC output: 24V
*Programmable output: 10 to 110%
*Regulation: ±0.2%
*Efficiency: 88.5%
*Maximum operating temperature: 100°C at full load
*Power density: 100W/cubic inch
*Height above board: 0.43 in. (10,9 mm)
*Parallelable, with N+M fault tolerance
*Low noise ZCS/ZVS architecture

V24A15C250A, V48A15C250A, V300A15C250A, V375A15C250A, V24B15C250A, V48B15C250A, V300B15C250A, V375B15C250A, V24C15C250A, V48C15C250A, V300C15C250A, V375C15C250A, V24A15T250A, V48A15T250A, V300A15T250A, V375A15T250A, V24B15T250A, V48B15T250A, V300B15T250A, V375B15T250A, V24C15T250A, V48C15T250A, V300C15T250A, V375C15T250A, V24A15H250A, V48A15H250A, V300A15H250A, V375A15H250A, V24B15H250A, V48B15H250A, V300B15H250A, V375B15H250A, V24C15H250A, V48C15H250A, V300C15H250A, V375C15H250A, V24A15M250A, V48A15M250A, V300A15M250A, V375A15M250A, V24B15M250A, V48B15M250A, V300B15M250A, V375B15M250A, V24C15M250A, V48C15M250A, V300C15M250A, V375C15M250A

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