Product Overview
This DC-DC converter module uses 2nd Generation power processing, control and packaging technologies to provide the performance, flexibility and cost effectiveness expected of a mature power component. For example, a plated-cavity core transformer couples widely separated primary and secondary windings, resulting in low in-toout parasitic capacitance and noise.
High frequency ZCS/ZVS switching, advanced power semiconductor packaging and thermal management provide high power density with low temperature gradients. Extensive use of silicon integration results in 1/3 the part count of a 1st Generation converter.

Features
*DC input range: 36 - 75V
*Input surge withstand: 100V for 100ms
*DC output: 2V
*Programmable output: 10 to 110%
*Regulation: ±0.2%
*Efficiency: 75.5%
*Maximum operating temperature: 100°C at full load
*Power density: 40W/cubic inch
*Height above board: 0.43 in. (10,9 mm)
*Parallelable, with N+M fault tolerance
*Low noise ZCS/ZVS architecture

Typical Applications
*telecommunications and distributed power systems

V24A15C250A, V48A15C250A, V300A15C250A, V375A15C250A

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Description
RPM972-H14 is an infrared communication module for IrDA Ver. 1.4 (Low Power). The infrared LED, PIN photo diode, and waveform shaping LSI are all integrated into one single package. This module is designed for low power consumption. The very small package makes it a perfect fit for mobile devices.
Also it provides the capability of IR remote control transmission for universal remote control applications.

Features
*Infrared LED, PIN photo diode, LED driver and receiver frequency formation circuit built in. Improvement of EMI noise protection by Shield Case.
*Applied to SIR (9.6k to 115.2kbps), MIR (0.576M, 1.152Mbps) and FIR(4Mbps).
*Surface mount type.
*Power down function built in.
*Adjustable communication distance by LED load resistance value.
*Infrared remote control transmission driver built-in.

Applications
*Cellular phone, PDA, DVC, Digital still camera, Printer, Handy terminal etc.

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DESCRIPTION
The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=30W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum). The nominal output power becomes available at the state that VGG is 4V (typical) and 5V (maximum).
At VGG=5V, the typical gate currents are 1mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES
*Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
*Pout>30W, ηT>42% @ VDD=12.5V, VGG=5V, Pin=50mW
*Broadband Frequency Range: 400-470MHz
*Metal shield structure that makes the improvements of spurious radiation simple
*Low-Power Control Current IGG=1mA (typ) @ VGG=5V
*Module Size: 67 x 18 x 9.9 mm
*Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power.

RA30H4047M1-101

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GENERAL DESCRIPTION
The HSD16M72D18A is a 16M x 72 bit Synchronous Dynamic RAM high-density memory module. The module consists of eighteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages and 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy. Two 0.33uF-decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD16M72D18A is a DIMM (Dual in line Memory Module) and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.

FEATURES
*Part Identification
-HSD16M72D18A-F/10L : 100MHz (CL=3)
-HSD16M72D18A-F/10 : 100MHz (CL=2)
-HSD16M72D18A-F/12 : 125MHz (CL=3)
-HSD16M72D18A-F/13 : 133MHz (CL=3)
-HSD16M72D18A-F/13H : 133MHz (CL=2)
-F means Auto & Self refresh with Low-Power (3.3V)
*Burst mode operation
*Auto & self refresh capability (4096 Cycles/64ms)
*LVTTL compatible inputs and outputs
*Single 3.3V ±0.3V power supply
*MRS cycle with address key programs
-Latency (Access from column address)
-Burst length (1, 2, 4, 8 & Full page)
-Data scramble (Sequential & Interleave)
*All inputs are sampled at the positive going edge of the system clock
*The used device is 8M x 8bit , 4Banks SDRAM

HSD16M72D18A-13, HSD16M72D18A-13H, HSD16M72D18A-12, HSD16M72D18A-10L

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DESCRIPTION
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A.
The DIM200PHM33-F000 is a half bridge 3300V soft punch through, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.

FEATURES
*Soft Punch Through Silicon
*10μs Short Circuit Withstand
*Isolated MMC Base with AlN Substrates
*High Thermal Cycling Capability

APPLICATIONS
*High Reliability Inverters
*Motor Controllers
*Traction Auxiliaries
TAG IGBT, Module

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Description
Fiber optic receiver front-end module for STM-16 and OC-48 WDM applications. The module includes an InGaAs Avalanche Photo Diode (APD), with a low noise GaAs MMIC preamplifier in a 14 pin butterfly package.The module is equipped with an internal thermistor. The single-mode fiber pigtail is terminated with a customer specified connector. The module operates
between 1250 and 1620 nm. The electrical outputs are AC-coupled and differential.

Key Features
*Hermetic, 14 pin butterfly package with multisourced footprint
*FC/PC, SC or ST connector
*InGaAs APD with low noise GaAs MMIC preamplifier
*AC-coupled, differential data output
*Operates between 1250 nm and 1620 nm
*2.0 GHz minimum bandwidth
*-34 dBm typical sensitivity
*-3 dBm typical overload

Applications
*WDM
*SDH STM-16 LH
*SONET OC-48 LR
*Digital recievers to 3 Gb/s
*Analog receivers to 2.0 GHz

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GENERAL DESCRIPTION
The MT12D436 and MT24D836 are randomly accessed 16MB and 32MB solid-state memories organized in a x36 configuration. During READ or WRITE cycles, each bit is uniquely addressed through the 22 address bits, which are entered 11 bits (A0 -A10) at a time. RAS# is used to latch the first 11 bits and CAS# the latter 11 bits. A READ or WRITE cycle is selected with the WE# input. A logic HIGH on WE# dictates READ mode, while a logic LOW on WE# dictates WRITE mode. During a WRITE cycle, data-in (D) is latched by the falling edge of CAS#. Since WE# goes LOW prior to CAS# going LOW, the output pin(s) remain open (High-Z) until the next CAS# cycle.

FEATURES
*JEDEC- and industry-standard pinout in a 72-pin, single in-line memory module (SIMM)
*16MB (4 Meg x 36) and 32MB (8 Meg x 36) parity versions
*High-performance CMOS silicon-gate process
*Single 5V ±10% power supply
*All inputs, outputs and clocks are TTL-compatible
*Refresh modes: RAS#-ONLY, CAS#-BEFORE-RAS# (CBR) and HIDDEN
*2,048-cycle refresh distributed across 32ms
*FAST PAGE MODE (FPM) access cycle
*Multiple RAS# lines allow x18 or x36 widths

MT24D836, MT12D436G-XX, MT12D436M-XX
TAG DRAM, Module

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Product Overview
This DC-DC converter module uses 2nd Generation power processing, control and packaging technologies to provide the performance, flexibility and cost effectiveness expected of a mature power component. For example, a plated-cavity core transformer couples widely separated primary and secondary windings, resulting in low in-toout parasitic capacitance and noise.
High frequency ZCS/ZVS switching, advanced power semiconductor packaging and thermal management provide high power density with low temperature gradients. Extensive use of silicon integration results in 1/3 the part count of a 1st Generation converter.

Features
*DC input range: 18 - 36V
*Input surge withstand: 50V for 100ms
*DC output: 28V
*Programmable output: 10 to 110%
*Regulation: ±0.2% no load to full load
*Efficiency: 88.5%
*Maximum operating temperature: 100°C at full load
*Power density: 79W/cubic inch
*Height above board: 0.43 in. (10,9 mm)
*Parallelable, with N+M fault tolerance
*Low noise ZCS/ZVS architecture

Typical Applications
telecommunications, process control and distributed power systems

V24A12C500A, V48A12C500A, V300A12C500A, V375A12C500A

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DESCRIPTION
The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to 520-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=30W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that VGG is 4V (typical) and 5V (maximum).
At VGG=5V, the typical gate currents are 1mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES
*Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
*Pout>30W, ηT>42% @ VDD=12.5V, VGG=5V, Pin=50mW
*Broadband Frequency Range: 450-520MHz
*Metal shield structure that makes the improvements of spurious radiation simple
*Low-Power Control Current IGG=1mA (typ) @ VGG=5V
*Module Size: 67 x 18 x 9.9 mm
*Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power.

RA30H4552M1-101

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GENERAL DESCRIPTION
The HMF51232M4V is a high-speed flash read only memory (FROM) module containing 524,288 words organized in a x32bit configuration. The module consists of four 512Kx 8 FROM mounted on a 72-pin, single-sided, FR4-printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices.
Four chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1) are used to enable the module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output.
When FROM module is disable condition, the module is becoming power standby mode, system designer can get low-power design.
All module components may be powered from a single +3V DC power supply and all inputs and outputs are TTL-compatible.

FEATURES
*Access time : 55,70, 90 and 120ns
*High-density 2MByte design
*High-reliability, low-power design
*Single + 3V ± 0.3V power supply
*Easy memory expansion
*All inputs and outputs are TTL- compatible
*FR4-PCB design
*Low profile 72-pin SIMM
*Minimum 1,000,000 write/erase cycle
*Sector erases architecture
*Sector group protection
*Temporary sector group unprotection
*Part Identification HMF51232M4V : Gold Plate Lead

HMF51232M4V-55, HMF51232M4V-70, HMF51232M4V-90, HMF51232M4V-120

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