GENERAL DESCRIPTION
The Micron® MT8LD864A X, MT16LD1664A X and MT32LD3264A X are randomly accessed 64MB, 128MB and 256MB memories organized in a x64 configuration. They are specially processed to operate from 3V to 3.6V for low-voltage memory systems.
During READ or WRITE cycles, each bit is uniquely addressed through the 22/23 address bits, which are entered 12 bits (A0-A11) at RAS# time and 11/12 bits (A0-A11) at CAS# time.
READ and WRITE cycles are selected with the WE# input. A logic HIGH on WE# dictates read mode, while a logic LOW on WE# dictates write mode. During a WRITE cycle, data-in (D) is latched by the falling edge of WE# or CAS#, whichever occurs last. An EARLY WRITE occurs when WE# is taken LOW prior to CAS# falling. A LATE WRITE or READ-MODIFY-WRITE occurs when WE# falls after CAS# was taken LOW. During EARLY WRITE cycles, the data-outputs (Q) will remain High-Z regardless of the state of OE#. During LATE WRITE or READ-MODIFY-WRITE cycles, OE# must be taken HIGH to disable the data-outputs prior to applying input data. If a LATE WRITE or READMODIFY-WRITE is attempted while keeping OE# LOW, no WRITE will occur, and the data-outputs will drive read data from the accessed location.

FEATURES
*Eight-CAS# ECC pinout in a 168-pin, dual in-line memory module (DIMM)
*64MB (8 Meg x 64), 128MB (16 Meg x 64), and 256MB (32 Meg x 64)
*Nonbuffered
*High-performance CMOS silicon-gate process
*Single +3.3V ±0.3V power supply
*All inputs, outputs and clocks are LVTTLcompatible
*4,096-cycle CAS#-BEFORE-RAS# (CBR) refresh distributed across 64ms
*Extended Data-Out (EDO) PAGE MODE access cycle
*Serial presence-detect (SPD)

MT8LD864A, MT16LD1664A, MT8LD864AG-5X, MT16LD1664AG-5X, MT32LD3264AG-5X
TAG DRAM, Module

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Product Overview
This DC-DC converter module uses 2nd Generation power processing, control and packaging technologies to provide the performance, flexibility and cost effectiveness expected of a mature power component.
For example, a plated-cavity core transformer couples widely separated primary and secondary windings, resulting in low in-toout parasitic capacitance and noise.
High frequency ZCS/ZVS switching, advanced power semiconductor packaging and thermal management provide high power density with low temperature gradients. Extensive use of silicon integration results in 1/3 the part count of a 1st Generation converter.

Features
*DC input range: 180 - 375V
*Input surge withstand: 400V for 100ms
*DC output: 24V
*Programmable output: 10 to 110%
*Regulation: ±0.3%
*Efficiency: 87.5%
*Maximum operating temperature : 100°C at full load
*Power density: 100W/cubic inch
*Height above board: 0.43 in. (10,9 mm)
*Parallelable, with N+M fault tolerance
*Low noise ZCS/ZVS architecture

Typical Applications
*off-line systems, distributed power and electric vehicles

DC048B010T010FP, DC048B010M010FP, DC048B010T010TP

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GENERAL DESCRIPTION
The HMF2M32M8G is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of eight 1M x 8 FROM mounted on a 72 -pin, double-sided, FR4-printed circuit board.
The HMF2M32M8 is entirely pin and command set compatible with JEDEC standard 4M-bit E2 PROMs. Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices.
Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to enable the module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL - compatible.

FEATURES
*Access time : 75, 90 and 120ns
*High-density 8MByte design
*High-reliability, low-power design
*Single + 5V ± 0.5V power supply
*Easy memory expansion
*All inputs and outputs are TTL-compatible
*FR4-PCB design
*Low profile 72-pin SIMM
*Minimum 1,000,000 write/erase cycle
*Sectors erase architecture
*Sector group protection
*Temporary sector group unprotection
*The used device is Am29F080B

HMF2M32M8G-75, HMF2M32M8G-90, HMF2M32M8G-120

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DESCRIPTION
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A.
The DIM600BSS12-E000 is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10μs short circuit withstand.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.

FEATURES
*Trench Gate Field Stop Technology
*Low Conduction Losses
*Low Switching Losses
*10μs Short Circuit Withstand

APPLICATIONS
*Motor Drives
*Wind Turbines
*UPS Systems

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PRODUCT DESCRIPTION
The AWT6275 meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4 mm x 4 mm x 1.5 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.

FEATURES
*InGaP HBT Technology
*High Efficiency:
-43% @ POUT = +27.5 dBm
-21% @ POUT = +16 dBm
-15% @ POUT = +7 dBm
*Low Quiescent Current: 16 mA
*Low Leakage Current in Shutdown Mode: <1 μA
*VREF = +2.85 V (+2.75 V min over temp)
*Optimized for a 50 Ω System
*Low Profile Miniature Surface Mount Package Option: 1.1 mm Max
*RoHS Compliant Package, 250 oC MSL-3
*HSDPA Capable

APPLICATIONS
*Dual Band WCDMA Wireless Handsets
*Dual Mode 3GPP Wireless Handsets

AWT6275RM20P8

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Product Overview
This DC-DC converter module uses 2nd Generation power processing, control and packaging technologies to provide the performance, flexibility and cost effectiveness expected of a mature power component. For example, a plated-cavity core transformer couples widely separated primary and secondary windings, resulting in low in-toout parasitic capacitance and noise.
High frequency ZCS/ZVS switching, advanced power semiconductor packaging and thermal management provide high power density with low temperature gradients. Extensive use of silicon integration results in 1/3 the part count of a 1st Generation converter.

Features
*DC input range: 250 - 425V
*Input surge withstand: 500V for 100ms
*DC output: 15V
*Programmable output: 10 to 110%
*Regulation: ±0.2% no load to full load
*Efficiency: 87%
*Maximum operating temperature: 100°C at full load
*Power density: 119W/cubic inch
*Height above board: 0.43 in. (10,9 mm)
*Parallelable, with N+M fault tolerance
*Low noise ZCS/ZVS architecture

Typical Applications
*distributed power; off-line systems using power PFC front-ends; electric vehicles

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DESCRIPTION
Maxwell Technologies’ 69F1608 high-performance flash memory is a 16M x 8-bit NAND Flash Memory with a spare 128K (131,072) x 8-bit. A program operation programs the 528-byte page in 250 μ s and an erase operation can be performed in 2 ms on an 8K-byte block. Data within a page can be read out at 50 ns cycle time per byte. The on-chip write controller automates all program and erase functions, including pulse repetition, where required, and internal verify and margining of data. Even write-intensive systems can take advantage of the 69F1608’s extended reliability of 1,000,000 program/erase cycles by providing either ECC (Error Correction Code) or real time mapping-out algorithm. These algorithms have been implemented in many mass storage applications. The spare 16 bytes of a page combined with the other 512 bytes can be utilized by system-level ECC. The 69F1608 is an optimum solution for large non-volatile storage applications such as solid state data storage, digital voice recorders, digital still cameras and other applications requiring nonvolatility.
Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. Capable of surviving in space environments, the 69F1608 is ideal for satellite, spacecraft, and space probe missions. It is available with packaging and screening up to Maxwell Technologies self-defined Class K.

FEATURES
*Single 5.0 V supply
*Organization:
-Memory cell array: (4M + 128k) bit x 8bit
-Data register: (512 + 16) bit x 8bit
-Contains 4 (32 Megabit) Die
*Automatic program and erase
-Page program: (512 + 16) Byte
-Block erase: (8K + 256) Byte
-Status register
*528-Byte page read operation
-Random access: 10 μ s (max)
-Serial page access: 50 ns (min)
*Fast write cycle time
-Program time: 250 μ s (typ)
-Block erase time: 2 ms (typ)
*Command/address/data multiplexed I/O port
*Hardware data protection
-Program/erase lockout during power transitions
*Reliable CMOS floating-gate technology
-Endurance: 1,000,000 program/erase cycles
-Data retention: 10 years
*Command register operation

69F1608RPFK, 69F1608RPFH, 69F1608RPFI, 69F1608RPFE

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GENERAL DESCRIPTION
The HSD8M32F4V/VA is a 8M x 32 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II packages is mounted on a 120-pin, single-sided, FR-4-printed circuit board., Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD8M32F4V/VA is a SMM (Stackable Memory Module) designed and is intended for mounting into two 60-pin connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.

FEATURES
*Part Identification
-HSD8M32F4V : Height from bottom to top 11.3mm
-HSD8M32F4VA : Height from bottom to top 7.3mm
*Burst mode operation
*Auto & self refresh capability (4096 Cycles/64ms)
*LVTTL compatible inputs and outputs
*Single 3.3V ±0.3V power supply
*MRS cycle with address key programs
-Latency (Access from column address)
-Burst length (1, 2, 4, 8 & Full page)
-Data scramble (Sequential & Interleave)
*All inputs are sampled at the positive going edge of the system clock
*120pin SMM type FR4-PCB design
*The used device is 4Mx8bit x4Banks SDRAM
*Pin assignment is compatible with
-HSD16M64F8V/VA
-HSD32M64F8V/VA
-HSD8M64F8V/VA

HSD8M32F4VA, HSD8M32F4V-13, HSD8M32F4V-12, HSD8M32F4VA-13

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DESCRIPTION
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A.
The DIM200PKM33-A000 is a 3300V, n channel enhancement mode insulated gate bipolar transistor (IGBT) chopper module configured with the upper arm of the bridge controlled. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10μs short circuit withstand. This device is optimised for applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.

FEATURES
*10μs Short Circuit Withstand
*High Thermal Cycling Capability
*Non Punch Through Silicon
*Isolated MMC Base with AlN Substrates

APPLICATIONS
*Choppers
*Traction Auxiliaries

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Product Description
TriQuint’s TQM613017 is a fully matched PA/Duplexer, Front End Module (FEM) for CDMA/AMPS use in mobile phones. The 8 x 5 x 1.52 mm, 22-pin module includes an integrated SAW Duplexer, Power Amplifier, Transmit filter, RF Power Detector and Logic Controller. With an RF Power Output up to 25.5dBm the TQM613017 FEM meets the strict ACPR and ALTR requirements for products designed to the IS-95/98 standards. The quiescent current of the PA/Duplexer is set by the base-band processor using a 1-bit bias control (Vmode) to minimize battery consumption and maximize talk time.
TriQuint’s multilayer laminate technology provides low loss interconnect and optimized match between the duplexer, PA and filter enabling the TQM613017 to achieve typically 430 mA current consumption at maximum output power (+25.5dBm). The small 8.0 × 5.0 mm module replaces four separate components requiring less board space. TQM613107 provides handset designers with a simple to use surface mount module requiring minimal external circuitry in the new generation of small and light phones.

Features
*InGaP GaAs HBT PA
*Low Current Consumption Typical: 460mA @ +25.5dBm
*Low Quiescent Current Typical: 40mA
*1-Bit Bias Control for Extended Talk Time
*Integrated power detector
*Integrated duplexer and interstage filter
*Excellent ACPR Typical: -51 dBc @ +/- 885kHz offset
*Excellent ALTR Typical: -60 dBc @ +/- 1.98 MHz offset
*Low Voltage Operation 1.3 V to 4.4 V
*Small Profile 22 pins, 8.0 x 5.0 x 1.52 mm
*Reduced Phone Board Space Replaces 4 Separate Components
*Easy to use with few External Components Internally matched inputs and outputs

Applications
*IS-95/CDMA2000
*Single-Mode, Dual Mode, and Tri Mode CDMA/AMPS phones

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