DESCRIPTION
The MS5541C is the miniature version of MS5535C pressure sensor module. It contains a precision piezoresistive pressure sensor and an improved version of the 16 Bit Micropower Sensor interface IC known from the MS5535C. Compared to the previous version the ESD sensitivity has been improved to 4kV on all pins. In addition to this the MS5541C is from its outer dimensions compatible to the MS54xx series of pressure sensors. It uses an antimagnetic polished stainless steel ring for sealing with O-ring. The sensor provides 16 Bit pressure and temperature data via a 3 wire serial interface that can be easily interfaced with 4 Bit low power microcontrollers. 64 Bit of factory programmed PROM provides calibration data for a highly accurate pressure and temperature calculation. The MS5541C is fully software compatible to the MS5535C and previous versions of MS5541.

FEATURES
*Resolution 1.2 mbar
*Supply voltage 2.2 V to 3.6 V
*Operating current < 5uA
*Standby current < 0.1uA
*-40°C to +85°C
*No external components required

APPLICATIONS
*Diving computers and divers watches
*Mobile water depth measurement systems

MS5541-CM

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GENERAL DESCRIPTION
The HMF1M32M8G is a high-speed flash read only memory (FROM) module containing 1,048,576 words organized in a x32bit configuration. The module consists of eight 512K x 8 FROM mounted on a 72 -pin, single-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices.
Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to
enable the module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output..When FROM module is disable condition the module is becoming power standby mode, system designer can get low - power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL-compatible.

FEATURES
*Access time: 55, 70, 90 and 120ns
*High-density 4MByte design
*High-reliability, low-power design
*Single + 5V ± 0.5V power supply
*Easy memory expansion
*All inputs and outputs are TTL-compatible
*FR4-PCB design
*Low profile 72-pin SIMM
*Minimum 1,000,000 write/erase cycle
*Sector erases architecture
*Sector group protection
*Temporary sector group unprotection

HMF1M32M8G-55, HMF1M32M8G-70, HMF1M32M8G-90, HMF1M32M8G-120

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Description
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A.
The DIM400DDM12-A000 is a dual switch 1200V, nchannel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10us short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.

FEATURES
*10μs Short Circuit Withstand
*Non Punch Through Silicon
*Lead Free construction
*Isolated MMC Base with AlN Substrates
*High Thermal Cycling Capability

APPLICATIONS
*High Reliability Inverters
*Motor Controllers
*Traction Drives

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Description
The transmitter module is intended for use at SDH and SONET bit rates. The device meets the intention of the ITU-T (G.691) recommendations.
The single silicon IC is used as a laser driver, modulator and automatic power control. To ensure a proper laser operation over the wide temperature range and life of operation, the average optical output power is controlled. The laser bias is externally accessible for monitoring of the performance. A power alarm is activated when the average optical power cannot be maintained within specification. A laser shut-down is also provided according to SDH/SONET requirements.

Key Features
*Provides 1620 nm supervisory channel laser source for WDM applications according to ITU-T draft G.691
*Average power control
*Small size (40x70x9 mm)
*CMOS alarm output
*Thermoelectric cooler included
*P-ECL data inputs
*Tone modulation input
*Single 5.0 V supply

Applications
*1620 nm supervisory channel applications in WDM systems

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Product Description
TQM640002 RF front end module (FEM) is an active device for GPS applications (center frequency 1575.42 MHz). It is designed for simultaneous GPS + voice in multi-function handsets. The FEM is comprised of a low-power flip-chip LNA die, a pair of high-performance SAW filters, and integrated passive matching circuitry. The module will operate at 1.8v or 2.8v bias and its current consumption – typically 5.0 mA – is not changed by DC supply, making it suitable for use in lowpower applications & during low-battery situations. The FEM performance exhibits high in-band gain and excellent rejection in all the key cellular & WLAN/Bluetooth bands. The device also exhibits both a high intercept point & a low noise figure, which optimally addresses today’s most stringent GPS front end receiver requirements.

Features
*Low noise figure & high associated gain for high IP3 receiver stages for 1575 MHz
*NF = 1.56 dB; Gain=16 dB @ 1.8V
*No external matching components required
*Low current consumption & low voltage operation
*High immunity against inband compression due to out-of-band interferers during simultaneous GPS + voice operation
*Input and output internally pre-matched to 50 W
*Low cost miniature package 3 x 3 x 1.0 mm
-suitable for low profile handset applications
*Power-up control for the LNA
*Designed to operate at 1.8V, with enhanced linearity performance at 2.8V
*Halogen-free

Applications
*1575.42 MHz, L1 band GPS applications
*Personal Navigation Devices
*Cellular Handsets: Simultaneous GPS + voice calls

TQM640002GEL, TQM640002TR

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DESCRIPTION
The MIL-COTS V•I Chip Bus Converter Module is a high efficiency (>95%) Sine Amplitude Converter (SAC) operating from a 240 to 330 Vdc primary bus to deliver an isolated 30 – 41.2 V nominal, unregulated secondary.
The VMB0004MFJ and VMB0004MFT are provided in a V•I Chip package compatible with standard pick-and-place and surface mount assembly processes.

FEATURES
*270 Vdc – 33.75 Vdc 235 W Bus Converter Module
*MIL-STD-704E/F Compliant
*High efficiency (>95%) reduces system power consumption
*High power density (796 W/in3) reduces power system footprint by >40%
*Contains built-in protection features: undervoltage, overvoltage lockout, over current protection, short circuit protection, overtemperature protection.
*Provides enable/disable control, internal temperature monitoring
*Can be paralleled to create multi-kW arrays

TYPICAL APPLICATIONS
*High Voltage 270 V Aircraft Distributed Power
*28 Vdc MIL-COTS PRM Interface (MP028F036M12AL)
*High Density Power Supplies
*Communication Systems

VMB0004MFT

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GENERAL DESCRIPTION
The XE1610-OEMPVT GPS Receiver from RF Solutions is a GPS receiver product which features the revolutionary FirstGPS™ architecture. This complete GPS receiver solution provides high accuracy position and speed performance as well as high sensitivity and tracking capabilities in urban areas. The GPS Receiver comes in a small form factor package. The XE1610-OEMPVT delivers major advancements in GPS performance, accuracy, integration, computing power and flexibility. It is designed to simplify the embedded system integration process.
The FirstGPS is a mixed hardware/software architecture based on the XE16BB10 advanced channel correlator IC and its companion RF downconverter.

KEY FEATURES
*High sensitivity: to -143 dBm tracking, superior urban performance.
*Position accuracy: < 5m CEP (50%) without SA (horizontal)
*Warm Start is under 40 seconds (50%)
*Hot Start is under 12 seconds (50%)
*Ultra low power: < 20 mA @ 3.3V full power, 3 additional low power modes
*Embedded ARM7TDMI
*Small form factor and low cost solution
*Ready-to-plug solution, fully autonomous PVT solution. Easily integrated into existing systems
*On-board RAM for GPS navigation data, on-board Flash memory back-up
*PPS output
*Bidirectional NMEA interface
*Real Time Clock with separate back-up power supply

APPLICATIONS
*Automotive
*Asset management/tracking
*Palmtop, Laptop, PDA
*Location Based Services enabled devices
*Handheld receivers

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GENERAL DESCRIPTION
The HMF2M32M8A is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of eight 1M x 8 FROM mounted on a 72 -pin, double-sided, FR4-printed circuit board.
The HMF2M32M8A is entirely pin and command set compatible with JEDEC standard 4M-bit EEPROMs. Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices.
Eight chip enable inputs, (/1CSLL, /2CSLL, /1CSLH, /2CSLH, /1CSHL, /2CSHL, /1CSHH, /2CSHH ) are used to enable the module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL-compatible.

FEATURES
*Access time : 75, 90 and 120ns
*High-density 8MByte design
*High-reliability, low-power design
*Single + 5V ± 0.5V power supply
*Easy memory expansion
*All inputs and outputs are TTL-compatible
*FR4-PCB design
*Low profile 72-pin SIMM
*Minimum 1,000,000 write/erase cycle
*Sectors erase architecture
*Sector group protection
*Temporary sector group unprotection
*The used device is Am29F080B

HMF2M32M8A-75, HMF2M32M8A-90, HMF2M32M8A-120

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PRODUCT DESCRIPTION
The AWT6388R is a high power, high efficiency amplifier module for CDMA450 wireless applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability and ruggedness. A low power quiescent current mode is digitally controlled to reduce power drain on the system battery. The 4 mm x 4 mm x 1 mm laminate package is self contained, incorporating 50 Ω input and output matching networks optimized for output power, linearity, and efficiency.

FEATURES
*InGaP HBT Technology
*High Efficiency: 38% CDMA
*Low Receive Band Noise (NRX) -134 dBm/Hz
*Small Foot Print (4 mm x 4 mm)
*50 Ω Input and Output Matching
*Shut Down and Mode Control
*CDMA 2000 1XRTT Compliant
*VREF = +2.85 V
*RoHS Compliant Package, 250 oC MSL-3

APPLICATIONS
*CDMA/EVDO 450 MHz Wireless Handsets and Data Devices

AWT6388RM20P8, AWT6388RM20P9

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DESCRIPTION
The M830 Series CDR module is specifically designed to regenerate the spectral clock component from an incoming NRZ data stream, incorporating forward error correction, and output a low-jitter clock and retimed complementary data.
The module utilizes a phase-locked loop architecture incorporating a high-stability, low noise SAW VCO to provide extremely low jitter clock and data outputs. The incoming data is frequency doubled to recover the clock component. The clock signal is then filtered by a microwave band pass filter to remove wide band noise and spurious signal. This signal is further filtered using the narrow band SAW VCO based PLL to minimize the noise close to the carrier. The low jitter clock is then used to retime the data and serves as the module’s clock output. The module provides usercontrolled clock phase shifter and output data crossover adjustments to optimize system performance.
PLL lock-in range and loop transfer characteristics are optimized for minimal jitter in accordance with ITU and Bellcore standards for SONET/SDH systems.

FEATURES
*Superior PLL-based jitter performance
*8psec p-p jitter
*0.9Vp-p complementary data outputs
*1 Ul externally adjustable clock phase
*200mVp-p input sensitivity
*Optional adjustable bias @ data input to decision circuit
*Externally adjustable decision threshold

APPLICATIONS
*SONET OC-192 and SDH STM Physical
*Layer and Clock and Data Recovery
*Applications Incorporating Forward
*Error Correction

M830D

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