General Description
The S29NS128J, S29NS064J, S29NS032J and S29NS016J are 128 Mbit, 64 Mbit, 32 Mbit and 16 Mbit 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash memory devices, organized as 8,388,608, 4,194,304, 2,097,152 and 1,048,576. words of 16 bits each. These devices use a single VCC of 1.7 to 1.95 V to read, program, and erase the memory array. A 12.0-volt Acc may be used for faster program performance if desired. These devices can also be programmed in standard EPROM programmers.

*Single 1.8 volt read, program and erase (1.7 to 1.95 V)
*Multiplexed Data and Address for reduced I/O count
– A15–A0 multiplexed as DQ15–DQ0
– Addresses are latched by AVD# control input when CE# low
*Simultaneous Read/Write operation
– Data can be continuously read from one bank while executing erase/program functions in other bank
– Zero latency between read and write operations
*Read access times at 54 MHz (CL=30 pF)
– Burst access times of 11/13.5 ns at industrial temperature range
– Asynchronous random access times of 65/70 ns
– Synchronous random access times of 71/87.5 ns
*Burst Modes
– Continuous linear burst
– 8/16/32 word linear burst with wrap around
– 8/16/32 word linear burst without wrap around
*Power dissipation (typical values, 8 bits switching, CL = 30 pF)
– Burst Mode Read: 25 mA
– Simultaneous Operation: 40 mA
– Program/Erase: 15 mA
– Standby mode: 9 μA
*Sector Architecture
– Four 8 Kword sectors
– Two hundred fifty-five (S29NS128J), one hundred twenty-seven (S29NS064J),sixty-three (S29NS032J), or thirty-one (S29NS016J) 32 Kword sectors
– Four banks (see next page for sector count and size)
*Sector Protection
– Software command sector locking
– WP# protects the two highest sectors
– All sectors locked when Acc = VIL
*Handshaking feature
– Provides host system with minimum possible latency by monitoring RDY
*Supports Common Flash Memory Interface (CFI)
*Software command set compatible with JEDEC 42.4 standards
– Backwards compatible with Am29F and Am29LV families
*Manufactured on 110 nm process technology
*Embedded Algorithms
– Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors
– Embedded Program algorithm automatically writes and verifies data at specified addresses
*Data# Polling
– Provides a software method of detecting program and erase operation completion
*Erase Suspend/Resume
– Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation
*Hardware reset input (RESET#)
– Hardware method to reset the device for reading array data
*CMOS compatible inputs and outputs
– 48-ball Very Thin FBGA (S29NS128J)
– 44-ball Very Thin FBGA (S29NS064J, S29NS032J, S29NS016J)
*Cycling Endurance: 1 million cycles per sector typical
*Data Retention: 20 years typical

S29NS128J0LBAW000, S29NS064J0LBAW000, S29NS032J0LBAW000

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 The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class
AB wireless base station amplifier applications.
This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance.
Packaged in an industry-standard CuW package capable of delivering a minimum output power of 180 W, it is ideally suited for today's RF power amplifier applications.

* Typical performance ratings are for IS-95 CDMA,
* pilot, sync, paging, traffic codes 8—13:
- Output power (POUT): 38 W.
- Power gain: 18.25 dB.
- Efficiency: 27%.
- Adjacent channel power ratio (ACPR) for 30 kHz bandwidth (BW):
  (750 kHz offset: –45 dBc)
  (1.98 MHz offset: –60 dBc)
- Input return loss: 10 dB.
* High-reliability, gold-metalization process.
* High gain, efficiency, and linearity.
* Integrated ESD protection.
* Industry-standard packages.
* 180 W minimum output power.

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* High input impedance
* Low input capacitance
* Fast switching speeds
* Low on-resistance
* Free from secondary breakdown
* Low input and output leakage

* Normally-on switches
* Solid state relays
* Converters
* Linear amplifi ers
* Constant current sources
* Telecom

General Description
This depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coeffi cient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

TAG channel, Mode

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The SPP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* LCD Display inverter

* -20V/-2.8A,RDS(ON)=120mΩ@VGS=-4.5V
* -20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOT-23-3L package design


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Low On-Resistance: RDS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected up to 2KV
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability

Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Finish --Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking: See Last Page
Ordering & Date Code Information: See Last Page
Weight: 0.008 grams (approximate)


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* Features
• Optimized for Off-Line and DC to DC Converters
• Low Start-Up Current (≦0.5mA)
• Automatic Feed Forward Compensation
• Pulse-by-Pulse Current Limiting
• Enhanced Load Response Characteristics
• Under-Voltage Lockout (UVLO) with Hysteresis
• Double Pulse Suppression
• High Current Totem Pole Output
• Internally Trimmed Bandgap Reference
• Current Mode Operation to 500KHZ
• Low Ro Error Amplifier

* General Description
 The AP3842/3/4/5 family of control ICs provides the necessary features to implement off-line or DC to DC fixed frequency current mode control schemes with a minimal external parts count. Internally implemented circuits include under voltage lockout featuring start-up current less than 0.5 mA, a precision reference trimmed for accuracy at the error amp input, logic to insure latched operation, a PWM comparator which also provides current limit control, and a totem pole output stage designed to source or sink high peak current. The output stage, suitable for driving N-Channel MOSFETs, is low in the off-state.

 Differences between members of this family are the under-voltage lockout thresholds and maximum duty cycle ranges. The AP3842 and AP3844 have UVLO thresholds of 16V(on) and 10V(off), ideally suited for off-line applications. The corresponding thresholds for the AP3843 and AP3845 are 8.5V and 7.6V. The AP3842 and AP3843 can operate to duty cycles approaching 100%. A range of the zero to < 50% is obtained by the AP3844 and AP3845 by the addition of an internal toggle flip flop which blanks the output off every other clock cycle.

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