GENERAL DESCRIPTION
The K4M56163PG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.

FEATURES
*1.8V power supply.
*LVCMOS compatible with multiplexed address.
*Four banks operation.
*MRS cycle with address key programs.
-CAS latency (1, 2 & 3).
-Burst length (1, 2, 4, 8 & Full page).
-Burst type (Sequential & Interleave).
*EMRS cycle with address key programs.
*All inputs are sampled at the positive going edge of the system clock.
*Burst read single-bit write operation.
*Special Function Support.
-PASR (Partial Array Self Refresh).
-Internal TCSR (Temperature Compensated Self Refresh)
-DS (Driver Strength)
-DPD (Deep Power Down)
*DQM for masking.
*Auto refresh.
*64ms refresh period (8K cycle)
*Commercial Temperature Operation (-25°C ~ 70°C).
*Extended Temperature Operation (-25°C ~ 85°C).
*54Balls FBGA ( -RXXX -Pb, -BXXX -Pb Free).

K4M56163PG-RE75, K4M56163PG-BE75, K4M56163PG-RG75
TAG Mobile, SDRAM

Trackback :: http://datasheetblog.com/trackback/2634

댓글을 달아 주세요 Comment

DESCRIPTION
The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to 520-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=30W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that VGG is 4V (typical) and 5V (maximum).
At VGG=5V, the typical gate currents are 1mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES
*Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
*Pout>30W, ηT>42% @ VDD=12.5V, VGG=5V, Pin=50mW
*Broadband Frequency Range: 450-520MHz
*Metal shield structure that makes the improvements of spurious radiation simple
*Low-Power Control Current IGG=1mA (typ) @ VGG=5V
*Module Size: 67 x 18 x 9.9 mm
*Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power.

RA30H4552M1-101

Trackback :: http://datasheetblog.com/trackback/2358

댓글을 달아 주세요 Comment

DESCRIPTION
The RA55H3340M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES
*Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
*Pout>55W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW
*Broadband Frequency Range: 330-400MHz
*Low-Power Control Current IGG=1mA (typ) at VGG=5V
*Module Size: 66 x 21 x 9.88 mm
*Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

RA55H3340M-101

TAG Amp, Mobile, Radio

Trackback :: http://datasheetblog.com/trackback/2211

댓글을 달아 주세요 Comment

Overview
 The Cypress W40S11-02 is a low-voltage, ten-output clock buffer.
Output buffer impedance is approximately 15Ω, which is ideal for driving SDRAM DIMMs.

Features
* Ten skew-controlled CMOS outputs (SDRAM0:9)
* Supports two SDRAM DIMMs
* Ideal for high-performance systems designed around Intel®’s latest mobile chip set
* SMBus serial configuration interface
* Skew between any two outputs is less than 250 ps
* 1 to 5 ns propagation delay
* DC to 133-MHz operation
* Single 3.3V supply voltage
* Low power CMOS design packaged in a 28-pin, 209-mil SSOP (Shrink Small Outline Package)

Key Specifications
* Supply Voltages: ...........................................VDD = 3.3V±5%
* Operating Temperature:.................................... 0°C to +70°C
* Input Threshold:...................................................1.5V typical
* Maximum Input Voltage: ...................................... VDD + 0.5V
* Input Frequency:............................................... 0 to 133 MHz
* BUF_IN to SDRAM0:9 Propagation Delay:........ 1.0 to 5.0 ns
* Output Edge Rate: ................................................. >1.5 V/ns
* Output Skew: ............................................................ ±250 ps
* Output Duty Cycle:...................................45/55% worst case
* Output Impedance: ....................................... 15 ohms typical
* Output Type: ............................................... CMOS rail-to-rail

W40S11

Trackback :: http://datasheetblog.com/trackback/1526

댓글을 달아 주세요 Comment

General Description
The Winbond WPC8768L and WPC8769L are highly integrated embedded controllers (EC) with an embedded RISC core and integrated advanced functions. They are targeted for a wide range of portable applications.
The WPC8768L/WPC8769L incorporate the CompactRISC® CR16CPlus core (a high-performance 16-bit RISC processor), on-chip ROM and RAM memories, system support
functions and a Flash Interface Unit (FIU) that interfaces directly with external SPI flash memory devices.
System support functions include: watchdog, PWM, timers, interrupt control, General-Purpose I/O (GPIO) with internal keyboard matrix scanning, PS/2® interface, SMBus® interface,
UART, SPI™, high-accuracy analog-to-digital (ADC) and digital-to-analog (DAC) converters for battery charging, system control, system health monitoring and analog controls, and a SensorPath™ interface.
The WPC8768L/WPC8769L interface with the host via an LPC interface. They also include a host-controlled Serial Port, CIR Port and Fast Infrared (FIR, IrDA 1.1 compliant) Port (WPC8768L only).
The WPC8768L/WPC8769L are PC01 and ACPI compliant, and offer a single-chip solution for the most commonly used notebook PC I/O peripherals.

Outstanding Features
* Shared BIOS flash memory
* Support for SPI flash memories
* Flash page programing support
* MCE-compliant Consumer Infrared (CIR) Port
* Fast Infrared Port (FIR, IrDA 1.1 compliant) (WPC8768L only)
* High-accuracy, high-speed ADC
* Up to 88 GPIO ports (including keyboard scanning) with a variety of wake-up events
* 16-bit RISC core, with up to 4 Mbytes of external address space, running at up to 25 MHz
* 128-pin LQFP package

WPC8769L

Trackback :: http://datasheetblog.com/trackback/1214

댓글을 달아 주세요 Comment

Description
The SC420 is a cost effective Dual MOSFET Driver, incorporating Semtech’s patented Combi-SenseTM technology, designed for switching High and Low side Power MOSFETs in Step-down Switching regulators. A 20ns max propagation delay from input transition to the gate of the power FET’s guarantees operation at high switching frequencies. Internal overlap protection circuit prevents shoot-through from Vin to GND in the main and synchronous MOSFETs.
High current drive capability (2A peak) allows fast switching, thus reducing switching losses at high (up to 1.5MHz) frequencies without causing thermal stress on the driver.
The high voltage CMOS process allows operation up to 27 Volts, making the SC420 suitable for adaptor powered applications. Under-voltage-lockout and over-temperature shutdown features are included for proper and safe operation. The SC420 is offered in a space saving MLP-12 package.

Features
* High efficiency
* Shutdown mode for increased power saving
* Tri-state capability
* Fast rise and fall times (15ns typical with 3000pF load)
* 5V gate drive
* Ultra-low (<20ns) propagation delay (BG going low)
* Adaptive and programmable non-overlapping gate drives provide shoot-through protection
* Floating top drive switches up to 27V
* High frequency (to 1.5 MHz) operation allows use of small inductors and low cost ceramic capacitors
* Under-voltage lockout
* Low quiescent current
* MLP packaging provides superior thermal performance in a small footprint

SC420IMLTR

Trackback :: http://datasheetblog.com/trackback/1048

댓글을 달아 주세요 Comment

General Description
The LM2506 device adapts RGB style display interfaces to the Mobile Pixel Link (MPL) Level zero serial link. The LM2506 supports one RGB display at up to 18-bit color depth and 800 X 300 pixels (over 216 Mbps and 13.2 MHz PCLK) is supported. A mode pin configures the device as a Serializer (SER) or Deserializer (DES) so the same chip can be used on both sides of the interface.
The interconnect is reduced from 22 signals to only 3 active signals with the LM2506 chipset easing flex interconnect design, size constraints and cost.
The LM2506 in SER mode resides beside an application, graphics or baseband processor and translates a parallel bus from LVCMOS levels to serial Mobile Pixel Link levels for transmission over a flex cable (or coax) and PCB traces to the DES located near the display module.
When the Power_Down (PD*) input is asserted on the SER, the MDn and MC line drivers are powered down to save current. The DES can be controlled by a separate Power-Down input or via a signal from the SER (PDOUT*).
The LM2506 implements the physical layer of the MPL Level 0 Standard (MPL-0) and a 150 μA IB current (Class 0).

Features
*RGB Display Interface support up to 800 x 300 1⁄2SVGA formats
*MPL-Level 0 Physical Layer using two data and one clock signal
*Low Power Consumption
*Pinout mirroring enables straight through layout with minimal vias
*Level translatio*betwee*host and display
*Auto Power Dow*o*STOP PCLK
*Link power dow*mode reduces quiescent power under < 10 μA
*1.74V to 2.0V core / analog supply voltage range
*1.74V to 3.0V I/O supply voltage range
*−30C to 85C Operating temperature range System Benefits
*Small Interface
*Low Power
*Low EMI
*Intrinsic Level Translation


LM2506GR
LM2506SQ

Trackback :: http://datasheetblog.com/trackback/853

댓글을 달아 주세요 Comment