Description
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

ㅁ Advanced Process Technology
ㅁ Ultra Low On-Resistance
ㅁ Dynamic dv/dt Rating
ㅁ 175°C Operating Temperature
ㅁ Fast Switching
ㅁ Fully Avalanche Rated
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Description
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
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General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features
· 11 A, 30 V. RDS(ON) = 12.5 mW @ VGS = 10 V RDS(ON) = 17.0 mW @ VGS = 4.5 V
· Fast switching speed
· Low gate charge
· High performance trench technology for extremely low RDS(ON)
· High power and current handling capability
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Description
These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and as drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits

Features
• 11A, 200V
• rDS(ON) = 0.500W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
  - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

IRF9640, RF1S9640SM
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Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF9Z34NL) is available for lowprofile applications.

Feature
- Advanced Process Technology
- Surface Mount (IRF9Z34NS)
- Low-profile through-hole (IRF9Z34NL)
- 175°C Operating Temperature
- Fast Switching
- P-Channel
- Fully Avalanche Rated

IRF9Z34NS, IRF9Z34NL
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Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17412.

Features
• 9A, 200V
• rDS(ON) = 0.400W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
  - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

IRF630 / RF1S630SM
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Description
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17425.

Features
• 8A, 500V
• rDS(ON) = 0.850W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
  - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
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■ TYPICAL RDS(on) = 0.050 W
■ AVALANCHERUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ 175oC OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ DC-DC & DC-AC CONVERTER
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS Etc.)

IRF540, IRF540FI
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· Dynamic dv/dt Rating
· Repetitive Avalanche Rated
· Fast Switching
· Ease of Paralleling
· Simple Drive Requirements

Description
Third Generation HEXFETs from International Rectifier Provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

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