General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 5.7A, 600V, RDS(on) = 1.0Ω @VGS = 10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Trackback :: http://datasheetblog.com/trackback/760

댓글을 달아 주세요 Comment

* DESCRIPTION
 The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
 This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

- FEATURES
* RDS(ON) = 3.6Ω @VGS = 10 V
* Ultra low gate charge ( typical 10 nC )
* Low reverse transfer capacitance ( CRSS = typical 5.5 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

3N60L-A-TA3-T
3N60L-B-TA3-T
3N60-A-TA3-T
3N60-B-TA3-T

Trackback :: http://datasheetblog.com/trackback/743

댓글을 달아 주세요 Comment

DESCRIPTION
RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. This device have an interal monolithic zener diode from gate to source for ESD protection.

FEATURES
•High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz
•High Efficiency: 60%typ. (175MHz)
•High Efficiency: 55%typ. (520MHz)
•Integrated gate protection diode

APPLICATION
For output stage of high power amplifiers In VHF/UHF band mobile radio sets.

RoHS COMPLIANT
RD07MVS2-101,T112 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

Trackback :: http://datasheetblog.com/trackback/671

댓글을 달아 주세요 Comment

Features
* Trench Technology
* Ultra Low On-Resistance
* Dual P-Channel MOSFET
* Low Profile (<1.8mm)
* Available in Tape & Reel
* Lead-Free

Description
 New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically
reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.


TAG MOSFET, Power

Trackback :: http://datasheetblog.com/trackback/655

댓글을 달아 주세요 Comment

Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control

Features
• Power MOS V® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a phase leg of three times the current capability
• Module can be configured as a three phase bridge
• Module can be configured as a boost followed by a full bridge
• RoHS Compliant

Trackback :: http://datasheetblog.com/trackback/590

댓글을 달아 주세요 Comment

Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability.
Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.

FEATURES
• Fast switching with low EMI/RFI
• Low RDS(on)
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant

TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters

APT14M120S

Trackback :: http://datasheetblog.com/trackback/578

댓글을 달아 주세요 Comment

FEATURES:
• 24 independently switchable power FETs
• Low equivalent on resistance (200 mΩ typ)
• 2A switching current per channel
• No derating required to 90°C
• Total dose hardness: depending upon space mission in RAD-PAK®
• Package: 176-pin quad flat pack

DESCRIPTION:
 Maxwell Technologies 24SW multi-chip module (MCM) 24 channel MOSFET driver uses Maxwell Technologies’ patented radiation-hardened RAD-PAK® MCM packaging technology. The 24SW is a radiation hardened MOSFET driver for space applications.

 The 24SW incorporates twenty-four independent pchannel MOSFETs, along with interface components, that can switch up to 2A per channel. The RDS-ON of the MOSFET is typically less than 200mΩ. Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while improving the TID performance in most space environments. This product is available with screening up to Maxwell Technologies self-defined Class K.

24SWRPQX 24SWRPQH 24SWRPQI 24SWRPQE

Trackback :: http://datasheetblog.com/trackback/566

댓글을 달아 주세요 Comment

General features
■ Ultra low threshold gate drive (2.5V)
■ Standard outline for easy automated surface mount assembly
■ Double dice in common drain configuration

Description
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting transistor shows extremely high packing density
for low on-resistance.

Applications
■ Switching application

STC6NF30V C6NF30V

Trackback :: http://datasheetblog.com/trackback/549

댓글을 달아 주세요 Comment

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 4.5A, 500V
• rDS(ON) = 1.500W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature


IRF830

Trackback :: http://datasheetblog.com/trackback/438

댓글을 달아 주세요 Comment

ㅁ TYPICAL RDS(on) = 0.073W
ㅁ EXTREMELY HIGH dv/dt CAPABILITY
ㅁ 100% AVALANCHE TESTED
ㅁ NEW HIGH VOLTAGE BENCHMARK
ㅁ GATE CHARGE MINIMIZED

DESCRIPTION
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

APPLICATIONS
ㅁ HIGH CURRENT, HIGH SPEED SWITCHING
ㅁ UNINTERRUPTIBLE POWER SUPPLIES (UPS)
ㅁ DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT

Trackback :: http://datasheetblog.com/trackback/372

댓글을 달아 주세요 Comment