Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment.

• Typical Performance at 945 MHz, 26 Volts
Output Power - 60 Watts PEP
Power Gain - 18.0 dB
Efficiency - 40% (Two Tones)
IMD - -31.5 dBc
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power

Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Integrated ESD Protection
• 200C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• TO-270-2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
• TO-272-2 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MRF9060NR1
MRF9060NBR1

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Low impedance 30V-40V MOSFETs lower power dissipation and improve efficiency for high power automotive systems

San Jose, California – December 20, 2007 – Fairchild Semiconductor (NYSE: FCS) provides automotive designers another compelling solution for improving the efficiency and power dissipation of their designs with its eleven new 30V-40V MOSFETs with ultra-low on resistance (2.1mOhms to 5.5 mOhms). Lower RDS(ON)  results in lower heat generation, the elimination of costly heat sinks and improved system efficiency for high power automotive systems such as braking, steering, radiator fan motor control, suspension, HVACs and starter/alternators. This, in turn, provides automobiles with better fuel efficiency and performance. In addition, this new series meets the automotive industry’s “Q101” standard, which is the most stringent set of reliability requirements in the semiconductor industry.

Automotive applications continue to move from mechanical to electronic systems. High current applications such as power steering, advanced braking systems, air conditioning, cooling systems and active suspensions are quickly adopting electrical control due to the consumer demand for improved efficiency. These electronic systems come with increased power requirements and rely on semiconductor suppliers to provide power MOSFETs with the lowest possible on resistance to reduce system power generation and unwanted heat. Using 30V-40V MOSFETs in automotive systems is a primary means of solving these challenges.

This new series also includes the FDB8444TS featuring temperature sense capability for monitoring and protection. If there is an unexpected rise in temperature, this temperature sense MOSFET will protect the system from adverse consequences.

All of these devices are part of Fairchild’s comprehensive portfolio of automotive products. Fairchild’s unique capabilities in advanced process and packaging technologies as well as its ability to integrate power analog, power discrete and optoelectronic functionality into innovative packaging, enable Fairchild to develop energy efficient solutions that continue to provide exceptional value in the automotive electronics market. For more information, visit our automotive page at"/automotive

These 30V-40V MOSFETs utilize lead-free (Pb-free) terminals and have been characterized for moisture sensitivity in accordance with the Pb-free reflow requirements of the joint IPC/JEDEC standard J-STD-020. All of Fairchild's products are designed to meet the requirements of the European Union's Directive on the restriction of the use of certain substances (RoHS).

Product Number BVDSS Gate Drive RDS(ON) Package Price (each) US$ 1K pcs
FDB8832 30V LL 2.1mOhm TO263 $1.40
FDD8444L 40V LL 6.0mOhm TO252 $0.65
FDB8441 40V SG 2.5mOhm TO263 $1.40
FDP8441 40V SG 2.7mOhm TO220 $1.40
FDI8441 40V SG 2.7mOhm TO262 $1.40
FDB8442 40V SG 2.9mOhm TO263 $1.20
FDI8442 40V SG 2.9mOhm TO262 $1.20
FDP8442 40V SG 3.1mOhm TO220 $1.20
FDB8443 40V SG 3.0mOhm TO263 $1.05
FDP8443 40V SG 3.5mOhm TO220 $1.05
FDB8444TS 40V SG 5.0mOhm TO263-5 $1.30

Price: See table

Availability: samples available now

Delivery: 10 weeks ARO

Contact Information: To contact Fairchild Semiconductor about this product, please go to: www.fairchildsemi.com/cf/sales_contacts/.

For information on other products, design tools and sales contacts, please visit: http://www.fairchildsemi.com/.

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Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications.
• Typical Two-Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEP
Power Gain - 15.5 dB
Drain Efficiency - 36%
IMD - -34 dBc
• Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band (2130-2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability
Power Gain - 15.5 dB
Drain Efficiency - 15%
IM3 @ 10 MHz Offset - -47 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset - -49 dBc in 3.84 MHz Channel Bandwidth
• Typical Single - Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band (1930 -1990 MHz), IS-95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain - 15.5 dB
Drain Efficiency- 16% ACPR @ 885 kHz Offset = -60 dBc in 30 kHz Bandwidth
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 4 Watts Avg., Full Frequency Band (1805 -1880 MHz)
Power Gain - 16 dB
Drain Efficiency - 33%
EVM - 1.3% rms
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW Output Power

Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

MRF6S20010GNR1

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Features
* Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A
* Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A
* Fast switching speed
* Low gate charge (8nC typical)
* High performance trench technology for extremely low rDS(on)
* SuperSOT™–6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)
* HBM ESD protection level > 2kV typical (Note 3)
* Manufactured using green packaging material
* Halide-Free
* RoHS Compliant

General Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.

Applications
* DC - DC Conversion
* Load switch
* Battery Protection

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* Generation V Technology
* Ultra Low On-Resistance
* N-Channel MOSFET
* Surface Mount
* Available in Tape & Reel
* Dynamic dv/dt Rating
* Fast Switching
* Lead-Free

Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that
HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically
reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in a typical PCB mount application.



TAG MOSFET, Power

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Features
* Max rDS(on) = 2.5mΩ at VGS = 10V, ID = 25A
* Max rDS(on) = 4.5mΩ at VGS = 4.5V, ID = 18.5A
* Ultra-thin package: less than 0.85mm height when mounted to PCB
* Outstanding thermal transfer characteristics
* Ultra-low gate charge x rDS(on) product
* RoHS Compliant

General Description
Combining Farichild’s 30V PowerTrench process with state-of-the-art BGA packaging, the FDZ4670 minimize both PCB space and rDS(on) . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handing capacity, ultra-low profile packaging, low gate charge and low rDS(on).
This MOSFET feature faster switching and lower gate charge than other MOSFETs with comparable rDS(on) specifications resulting in DC/DC power supply designs and POL converters with higher overall efficiency.

Applications
* DC - DC Conversion
* POL converters


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Description
The SC420 is a cost effective Dual MOSFET Driver, incorporating Semtech’s patented Combi-SenseTM technology, designed for switching High and Low side Power MOSFETs in Step-down Switching regulators. A 20ns max propagation delay from input transition to the gate of the power FET’s guarantees operation at high switching frequencies. Internal overlap protection circuit prevents shoot-through from Vin to GND in the main and synchronous MOSFETs.
High current drive capability (2A peak) allows fast switching, thus reducing switching losses at high (up to 1.5MHz) frequencies without causing thermal stress on the driver.
The high voltage CMOS process allows operation up to 27 Volts, making the SC420 suitable for adaptor powered applications. Under-voltage-lockout and over-temperature shutdown features are included for proper and safe operation. The SC420 is offered in a space saving MLP-12 package.

Features
* High efficiency
* Shutdown mode for increased power saving
* Tri-state capability
* Fast rise and fall times (15ns typical with 3000pF load)
* 5V gate drive
* Ultra-low (<20ns) propagation delay (BG going low)
* Adaptive and programmable non-overlapping gate drives provide shoot-through protection
* Floating top drive switches up to 27V
* High frequency (to 1.5 MHz) operation allows use of small inductors and low cost ceramic capacitors
* Under-voltage lockout
* Low quiescent current
* MLP packaging provides superior thermal performance in a small footprint

SC420IMLTR

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GENERAL DESCRIPTION
*20V N-Channel Enhancement-Mode MOSFET
*Vds=20V
*RDS(ON)=30 mΩ (TYP.) , VGS @2.5V, Ids@5.2A
*RDS(ON)=22 mΩ (TYP.), VGS @4.5V, Ids@6AV

FEATURES
*Advanced trench process technology
*High Density Cell Design For Ultra Low On-Resistance
*High Power and Current handing capacity
*Fully Characterized Avalanche Voltage and Current
*Ideal for Li ion battery pack applications


APPLICATIONS
*Power Management in Notebook
*Portable Equipment
*Battery Powered System
*DC/DC Converter
*Load Switch
*DSC
*LCD Display inverter

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Description
The GE07N70C-A is specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits.

Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching

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Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common- source amplifier applications in 26 volt base station equipment.

• Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 26 Volts, IDQ = 950 mA, Pout = 20 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 19.5 dB
Drain Efficiency — 28% ACPR @ 750 kHz Offset — -46.8 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 100 Watts CW Output Power

Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.


MRF5S9100NR1
MRF5S9100NBR1

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