This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.

Features
* 4.5A, 500V
* rDS(ON) = 1.500W
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Trackback :: http://datasheetblog.com/trackback/1767

댓글을 달아 주세요 Comment

Fully isolated package
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Ultra low gate charge

Features
* Fast CoolMOS power MOSFET - 4th generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped inductive switching (UIS)
* Fully isolated package

Applications
* Switched mode power supplies (SMPS)
* Uninterruptible power supplies (UPS)
* Power factor correction (PFC)
* Welding
* Inductive heating
* PDP and LCD adapter

Trackback :: http://datasheetblog.com/trackback/1721

댓글을 달아 주세요 Comment

DESCRIPTION
The PS7142-2A and PS7142L-2A are solid state relays containing GaAs LEDs on the light emitting side (input side) and MOS FETs on the output side.
They are suitable for analog signal control because of their low offset and high linearity.
The PS7142L-2A has a surface mount type lead.

FEATURES
* 2 channel type (1 a + 1 a output)
* Low LED operating current (IF = 2 mA)
* Designed for AC/DC switching line changer
* Small package (8-pin DIP)
* Low offset voltage
* PS7142L-2A: Surface mount type
* UL approved: File No. E72422 (S)
* BSI approved: No. 8245/8246
* CSA approved: No. CA 101391

APPLICATIONS
* Exchange equipment
* Measurement equipment
* FA/OA equipment

PS7142-2A
PS7142L-2A
PS7142L-2A-E3
PS7142L-2A-E4

Trackback :: http://datasheetblog.com/trackback/1710

댓글을 달아 주세요 Comment

General Description
 The IXDN404/IXDI404/IXDF404 is comprised of two 4 Ampere CMOS high speed MOSFET drivers.
Each output can source and sink 4A of peak current while producing voltage rise and fall times of less than 15ns to drive the latest IXYS MOSFETs and IGBT's.
The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range.
A patent-pending circuit virtually eliminates CMOS power supply cross conduction and current shoot-through.
Improved speed and drive capabilities are further enhanced by very low, matched rise and fall times.
The IXDN404 is configured as a dual non-inverting gate driver, the IXDI404 is a dual inverting gate driver, and the IXDF404 is a dual inverting + non-inverting gate driver.
The IXDN404/IXDI404/IXDF404 family are available in the standard 8 pin P-DIP (PI), SOIC-8 (SIA) and SOIC-16 (SIA-16) packages.
For enhanced thermal performance, the SOP-8 and SOP-16 are also available in a package with an exposed grounded metal back as the SI and SI-16 repectively.

Features
* Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes
* Latch-Up Protected up to 0.5A
* High Peak Output Current: 4A Peak
* Wide Operating Range: 4.5V to 35V
* High Capacitive Load Drive Capability: 1800pF in <15ns
* Matched Rise And Fall Times
* Low Propagation Delay Time
* Low Output Impedance
* Low Supply Current
* Two Drivers in Single Chip

Applications
* Driving MOSFETs and IGBTs
* Motor Controls
* Line Drivers
* Pulse Generators
* Local Power ON/OFF Switch
* Switch Mode Power Supplies (SMPS)
* DC to DC Converters
* Pulse Transformer Driver
* Class D Switching Amplifiers
* Limiting di/dt Under Short Circuit

IXDI404PI
IXDI404SI
IXDI404SIA

Trackback :: http://datasheetblog.com/trackback/1666

댓글을 달아 주세요 Comment

GENERAL DESCRIPTION
 ALD110802/ALD110902 are monolithic quad/dual N-Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS technology.
These devices are intended for low voltage, small signal applications.
The ALD110802/ALD110902 MOSFETS are designed and built for exceptional device electrical characteristics matching.
Since these devices are on the same monolithic chip, they also exhibit excellent tempco tracking characteristics.
They are versatile circuit elements useful as design components for a broad range of analog applications, such as basic building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications.
For most applications, connect V- and N/C pins to the most negative voltage potential in the system and V+ pin to the most positive voltage potential (or left open unused).
All other pins must have voltages within these voltage limits.
The ALD110802/ALD110902 devices are built for minimum offset voltage and differential thermal response, and they are suited for switching and amplifying applications in <+0.1V to +10V systems where low input bias current, low input capacitance and fast switching speed are desired, as these devices exhibit well controlled turn-off and sub-threshold characteristics and can be biased and operated in the sub-threshold region.
Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment.
The ALD110802/ALD110902 are suitable for use in very low operating voltage or very low power (nanowatt), precision applications which require very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect Transistors result from extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is specified at 30pA at room temperature.
For example, DC beta of the device at a drain current of 3mA and input leakage current of 30pA at 25°C is = 3mA/30pA = 100,000,000.

FEATURES
* Enhancement-mode (normally off)
* Precision Gate Threshold Voltage of +0.2V
* Matched MOSFET to MOSFET characteristics
* Tight lot to lot parametric control
* Low input capacitance
* VGS(th) match (VOS) to 10mV
* High input impedance — 1012Ω typical
* Positive, zero, and negative VGS(th) temperature coefficient
* DC current gain >108
* Low input and output leakage currents

APPLICATIONS
* Ultra low power (nanowatt) analog and digital circuits
* Ultra low operating voltage(<0.2V) circuits
* Sub-threshold biased and operated circuits
* Precision current mirrors and current sources
* Nano-Amp current sources
* High impedance resistor simulators
* Capacitive probes and sensor interfaces
* Differential amplifier input stages
* Discrete Voltage comparators and level shifters
* Voltage bias circuits
* Sample and Hold circuits
* Analog and digital inverters
* Charge detectors and charge integrators
* Source followers and High Impedance buffers
* Current multipliers
* Discrete Analog switches / multiplexers

ALD110902
ALD110802PC
ALD110802SC
ALD110902PA
ALD110902SA

Trackback :: http://datasheetblog.com/trackback/1588

댓글을 달아 주세요 Comment

Introduction
 The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class
AB wireless base station amplifier applications.
This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance.
Packaged in an industry-standard CuW package capable of delivering a minimum output power of 180 W, it is ideally suited for today's RF power amplifier applications.

Features
* Typical performance ratings are for IS-95 CDMA,
* pilot, sync, paging, traffic codes 8—13:
- Output power (POUT): 38 W.
- Power gain: 18.25 dB.
- Efficiency: 27%.
- Adjacent channel power ratio (ACPR) for 30 kHz bandwidth (BW):
  (750 kHz offset: –45 dBc)
  (1.98 MHz offset: –60 dBc)
- Input return loss: 10 dB.
* High-reliability, gold-metalization process.
* High gain, efficiency, and linearity.
* Integrated ESD protection.
* Si LDMOS.
* Industry-standard packages.
* 180 W minimum output power.

Trackback :: http://datasheetblog.com/trackback/1574

댓글을 달아 주세요 Comment

DESCRIPTION
 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications.
These devices have been characterized for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)).
The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

FEATURE
* Single Event Effect (SEE) Hardened
* Low RDS(on)
* Low Total Gate Charge
* Simple Drive Requirements
* Ease of Paralleling
* Hermetically Sealed
* Surface Mount
* Ceramic Package
* Light Weight

IRHNM597110
IRHNM593110

Trackback :: http://datasheetblog.com/trackback/1556

댓글을 달아 주세요 Comment

DESCRIPTION
 The SPN2302A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.

FEATURES
* 20V/4.0A,RDS(ON)=75mΩ@VGS=4.5V
* 20V/3.4A,RDS(ON)=95mΩ@VGS=2.5V
* 20V/2.8A,RDS(ON)=135mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOT-23-3L package design

APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* DSC
* LCD Display inverter

SPN2302AS23RG

Trackback :: http://datasheetblog.com/trackback/1507

댓글을 달아 주세요 Comment

General Description
The dual high speed driver is designed to drive a wide range of N-Channel low side and N-Channel high side MOSFETs with varying gate charges.
It has a small propagation delay from PWM input pin to GATEHS and GATELS, short rise and fall times and the same pin configuration as the ADP3418.
In addition it provides several protection features as well as a shut down mode for efficiency reasons.

Target application
The dual high speed driver is designed to work well in half-bridge type circuits where dual N-Channel MOSFETs are utilized.
A circuit designer can fully take advantage of the driver´s capabilities in highefficiency, high-density synchronous DC/DC converters that operate at high switching frequencies, e.g. in multi-phase converters for CPU supplies on motherboards and VRM´s but also in motor drive and half bridge class-D amplifier type applications.

Features
• Fast rise and fall times for frequencies up to 1 MHz
• Adjustable High Side MOSFET gate drive voltage via external voltage supply to BOOT for optimizing ON losses and gate drive losses ( 5V to 12V is recommended )
• Prevents from cross-conducting by adaptive gate drive control
• Supports shut-down mode for very low quiescent current through three-state input
• Compatible to standard PWM controller ICs (IFX, Intersil, Analog Devices, Richtek)
• Floating High Side MOSFET drive
• Power-on Overvoltage Protection
• Footprint compatible to ADP3418
• Ideal for multi-phase Desktop CPU supplies on motherboards and VRM´s

Application
• Voltage Regulator Modules
• Low Output Voltage High Output Current DC-DC Converters
• Half-Bridge Class D Amplifier

Q67042-S4251

Trackback :: http://datasheetblog.com/trackback/1498

댓글을 달아 주세요 Comment

GENERAL DESCRIPTION
ALD111933 are monolithic dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD® CMOS technology.
These devices are intended for low voltage, small signal applications.
ALD111933 MOSFETs are designed and built with exceptional device electrical characteristics matching.
Since these devices are on the same monolithic chip, they also exhibit excellent tempco tracking characteristics.
Each device is versatile as a circuit element and is a useful design component for a broad range of analog applications.
They are basic building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications.
For most applications, connect V- and N/C pins to the most negative voltage potential in the system.
All other pins must have voltages within these voltage limits.
The ALD111933 devices are built for minimum offset voltage and differential thermal response, and they are designed for switching and amplifying applications in +3.0V to +10V systems where low input bias current, low input capacitance and fast switching speed are desired.
Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment.
The ALD111933 are suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is specified at 30pA at room temperature.
For example, DC beta of the device at a drain current of 3mA and input leakage current of 30pA at 25°C is = 3mA/30pA = 100,000,000.

FEATURES
• Enhancement-mode (normally off)
• Standard Gate Threshold Voltages: +3.3V
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Parallel connection of MOSFETs to increase drain currents
• Low input capacitance
• VGS(th) match to 20mV
• High input impedance — 1012Ω typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >108
• Low input and output leakage currents

APPLICATIONS
• Precision current mirrors
• Precision current sources
• Voltage choppers
• Differential amplifier input stages
• Discrete voltage comparators
• Voltage bias circuits
• Sample and Hold circuits
• Analog inverters
• Level shifters
• Source followers and buffers
• Current multipliers
• Discrete analog multiplexers/matrices
• Discrete analog switches
• Low current voltage clamps
• Voltage detectors
• Capacitive probes
• Sensor interfaces
• Peak detectors
• Level shifters
• Multiple preset voltage hysteresis circuits (with other VGS(th) EPAD MOSFETS)
• Energy harvesting circuits
• Zero standby power voltage monitors

ALD111933PAL
ALD111933MAL
ALD111933SAL

Trackback :: http://datasheetblog.com/trackback/1485

댓글을 달아 주세요 Comment