General Description
The IXDD404 is comprised of two 4 Amp CMOS high speed MOSFET drivers. Each output can source and sink 4 A of peak current while producing voltage rise and fall times of less
than 15ns to drive the latest IXYS MOSFETS & IGBT's. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed
with small internal delays, cross conduction/current shootthrough is virtually eliminated in the IXDD404. Improved speed and drive capabilities are further enhanced by very low,
matched rise and fall times.
Additionally, each driver in the IXDD404 incorporates a unique ability to disable the output under fault conditions. When a logical low is forced into the Enable input of a driver, both of it's
final output stage MOSFETs (NMOS and PMOS) are turned off. As a result, the respective output of the IXDD404 enters a tristate mode and achieves a Soft Turn-Off of the MOSFET/
IGBT when a short circuit is detected. This helps prevent damage that could occur to the MOSFET/IGBT if it were to be switched off abruptly due to a dv/dt over-voltage transient.
The IXDD404 is available in the standard 8 pin P-DIP (PI), SOIC-8 (SIA) and SOIC-16 (SIA-16) packages. For enhanced thermal performance, the SOIC-8 and SOIC-16 are also available
with an exposed grounded metal back package as the SI and SI-16 respectively.

Features
*Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes
*Latch-Up Protected up to 0.5A
*High Peak Output Current: 4A Peak
*Wide Operating Range: 4.5V to 35V
*Ability to Disable Output under Faults
*High Capacitive Load Drive Capability: 1800pF in <15ns
*Matched Rise And Fall Times
*Low Propagation Delay Time
*Low Output Impedance
*Low Supply Current
*Two identical drivers in single chip

Applications
*Driving MOSFETs and IGBTs
*Limiting di/dt under Short Circuit
*Motor Controls
*Line Drivers
*Pulse Generators
*Local Power ON/OFF Switch
*Switch Mode Power Supplies (SMPS)
*DC to DC Converters
*Pulse Transformer Driver
*Class D Switching Amplifiers

IXDD404PI, IXDD404SI, IXDD404SIA, IXDD404SI-16, IXDD404SIA-16

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Description
Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used i n Class AB for PCN - PCS/cel lular radi o and WLL applications.
*Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 950 mA
Pout = 22 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
- Power Gain - 14.5 dB
- Drain Efficiency - 25.5%
- IM3 @ 2.5 MHz Offset - -37 dBc in 1.2288 MHz Bandwidth
- ACPR @ 885 kHz Offset - -51 dBc in 30 kHz Bandwidth
*Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power

Features
*Characterized with Series Equivalent Large-Signal Impedance Parameters
*Internally Matched for Ease of Use
*Qualified Up to a Maximum of 32 VDD Operation
*Integrated ESD Protection
*N Suffix Indicates Lead-Free Terminations
*Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
*200°C Capable Plastic Package
*RoHS Compliant
*In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MRF6S19100NBR1, MRF6S19100N

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Description
This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.

Features
*Avalanche Energy Specified
*Fast Switching
*Simple Drive Requirements

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DESCRIPTION
The SPC1016 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.

FEATURES
*N-Channel
- 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V
- 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
- 20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V
*P-Channel
- 20V/0.45A,RDS(ON)=0.52Ω@VGS=-4.5V
- 20V/0.35A,RDS(ON)=0.70Ω@VGS=-2.5V
- 20V/0.25A,RDS(ON)=0.95Ω@VGS=-1.8V
*Super high density cell design for extremely low RDS (ON)
*exceptional on-resistance and maximum DC current capability
*SOT-563 (SC-89-6L) package design

APPLICATIONS
*Power Management in Note book
*Portable Equipment
*Battery Powered System
*DC/DC Converter
*Load Switch
*DSC
*LCD Display inverter

SPC1016S56RG

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Description
This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.

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General Description
Utilizing Analogic Tech’s state-of-the-art TrenchDMOS process, the AHK6030LX sets a new standard in current handling capability and efficiency for surface mount power MOSFETs.
Gate charge and RDS(ON) have been optimized and package inductance minimized to provide high efficiency for DC-DC.

Features
*VDS(MAX) = 30V
*ID(MAX) (a)= 52 A @ 25°C
*IAPP(MAX) = 20A in typical computer application
*Low Gate Charge
*Low RDS(ON):
10.5 mΩ=(max), 9.5 mΩ=(typ)@VGS = 10V
18 mΩ= (max), 14 mΩ=(typ)@ VGS = 4.5V

Applications
*DC-DC converters for CPU's
*High Current Load Switch


AHK6030LXINY-T1

TAG MOSFET

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Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

TAG HEXFET, MOSFET

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Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
TAG MOSFET

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Description
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an
advanced family of Power MOSFETs with outstanding performances.
The new patented STrip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(ON) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

General features
* Extremely high dv/dt capability
* 100% avalanche tested
* Gate charge minimized
* ± 20V gate to source voltage rating
* Low intrinsic capacitance
* Fast body-drain diode:low trr, Qrr

Applications
* Switching application
TAG MOSFET

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DESCRIPTION
The UTC 7N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.

FEATURES
* RDS(ON) = 1.2Ω @VGS = 10 V
* Ultra low gate charge (typical 29 nC )
* Low reverse transfer Capacitance ( CRSS = typical 16pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness

7N60L-x-TA3-T
7N60L-x-TF3-T

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