DESCRIPTION
The SPC6601 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.

FEATURES
*N-Channel
-30V/2.8A,RDS(ON)= 68mΩ@VGS=10V
-30V/2.3A,RDS(ON)= 78mΩ@VGS=4.5V
-30V/1.5A,RDS(ON)= 108mΩ@VGS=2.5V
*P-Channel
-30V/-2.8A,RDS(ON)=105mΩ@VGS=- 10V
-30V/-2.5A,RDS(ON)=120mΩ@VGS=-4.5V
-30V/-1.5A,RDS(ON)=150mΩ@VGS=-2.5V
*Super high density cell design for extremely low RDS (ON)
*Exceptional on-resistance and maximum DC current capability
*TSOP– 6P package design

APPLICATIONS
*Power Management in Note book
*Portable Equipment
*Battery Powered System
*DC/DC Converter
*Load Switch
*DSC
*LCD Display inverter

SPC6601ST6RG

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DESCRIPTION
The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to 520-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=30W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that VGG is 4V (typical) and 5V (maximum).
At VGG=5V, the typical gate currents are 1mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES
*Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
*Pout>30W, ηT>42% @ VDD=12.5V, VGG=5V, Pin=50mW
*Broadband Frequency Range: 450-520MHz
*Metal shield structure that makes the improvements of spurious radiation simple
*Low-Power Control Current IGG=1mA (typ) @ VGG=5V
*Module Size: 67 x 18 x 9.9 mm
*Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power.

RA30H4552M1-101

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General Description
The IXDD409/IXDI409/IXDN409 are high speed high current gate drivers specifically designed to drive the largest MOSFETs and IGBTs to their minimum switching time and maximum practical frequency limits. The IXDD409/IXDI409/IXDN409 can source and sink 9A of peak current while
producing voltage rise and fall times of less than 30ns. The input of the drivers are compatible with TTL or CMOS and are fully immune to latch up over the entire operating range.
Designed with small internal delays, cross conduction/current shoot-through is virtually eliminated in the IXDD409/IXDI409/IXDN409. Their features and wide safety margin in operating voltage and power make the drivers unmatched in performance and value.
The IXDD409 incorporates a unique ability to disable the output under fault conditions. When a logical low is forced into the Enable input, both final output stage MOSFETs (NMOS and PMOS) are turned off. As a result, the output of the IXDD409 enters a tristate mode and achieves a Soft Turn-Off of the MOSFET/IGBT when a short circuit is detected.
This helps prevent damage that could occur to the MOSFET/IGBT if it were to be switched off abruptly due to a dv/dt overvoltage transient.
The IXDN409 is configured as a non-inverting gate driver, andthe IXDI409 is an inverting gate driver.
The IXDD409/IXDI409/IXDN409 are available in the standard 8-pin P-DIP (PI), SOP-8 (SI), 5-pin TO-220 (CI) and in the TO-263 (YI) surface-mount packages.

Features
*Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes.
*Latch Up Protected
*High Peak Output Current: 9A Peak
*Operates from 4.5V to 25V
*Ability to Disable Output under Faults
*High Capacitive Load Drive Capability: 2500pF in <15ns
*Matched Rise And Fall Times
*Low Propagation Delay Time
*Low Output Impedance
*Low Supply Current

Applications
*Driving MOSFETs and IGBTs
*Motor Controls
*Line Drivers
*Pulse Generators
*Local Power ON/OFF Switch
*Switch Mode Power Supplies (SMPS)
*DC to DC Converters
*Pulse Transformer Driver
*Limiting di/dt under Short Circuit
*Class D Switching Amplifiers

IXDD409SI, IXDD409YI, IXDD409CI, IXDI409PI, IXDI409SI, IXDI409YI, IXDI409CI

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DESCRIPTION
The PS7160-2A and PS7160L-2A are solid state relays containing GaAs LEDs on the light emitting side (input side) and MOS FETs on the output side.
They are suitable for analog signal control because of their low offset and high linearity.
The PS7160L-2A has a surface mount type lead.

FEATURES
*2 channel type (1 a + 1 a output)
*Low LED operating current (IF = 2 mA)
*Designed for AC/DC switching line changer
*Small package (8-pin DIP)
*Low offset voltage
*PS7160L-2A: Surface mount type
*UL approved: File No. E72422 (S)
*BSI approved: No. 8245/8246
*CSA approved: No. CA 101391

APPLICATIONS
*Exchange equipment
*Measurement equipment
*FA/OA equipment

PS7160-2A, PS7160L-2A, PS7160L-2A-E3, PS7160L-2A-E4

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Description
The A3986 is a dual full-bridge gate driver with integrated microstepping translator suitable for driving a wide range of higher power industrial bipolar 2-phase stepper motors (typically 30 to 500 W). Motor power is provided by external N-channel power MOSFETs at supply voltages from 12 to 50 V.
This device contains two sinusoidal DACs that generate the reference voltage for two separate fixed-off-time PWM current controllers. These provide current regulation for external power MOSFET full-bridges.
Motor stepping is controlled by a two-wire step and direction interface, providing complete microstepping control at full-,half-, quarter-, and sixteenth-step resolutions. The fixed-off time regulator has the ability to operate in slow-, mixed-, or fast-decay modes, which results in reduced audible motor noise, increased step accuracy, and reduced power dissipation.
The translator is the key to the easy implementation of this IC. Simply inputting one pulse on the STEP input drives the motor one step (full, half, quarter, or sixteenth depending on the microstep select input). There are no phase-sequence tables, high frequency control lines, or complex interfaces to program. This reduces the need for a complex microcontroller.

Features and Benefits
*2-wire step and direction interface
*Dual full-bridge gate drive for N-channel MOSFETs
*Operation over 12 to 50 V supply voltage range
*Synchronous rectification
*Cross-conduction protection
*Adjustable mixed decay
*Integrated sinusoidal DAC current reference
*Fixed off-time PWM current control

A3986SLD-T, A3986SLDTR-T

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DESCRIPTION
PS7200A-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output side.
It is suitable for high-frequency signal control, due to its low C x R, low output capacitance, and low off-state leakage current.

FEATURES
*LOW C X R: C X R = 30 pF • Ω
*LOW OUTPUT CAPACITANCE: COUT = 3.0 pF TYP
*LOW OFF-STATE LEAKAGE CURRENT: ILOFF = 0.1 nA TYP
*HIGH SPEED TURN-ON TIME: tON = 0.01 ms TYP
*1 CHANNEL TYPE: (1a output)
*DESIGNED FOR AC/DC SWITCHING LINE CHANGER
*SMALL PACKAGE: 4 pin SOP
HIGH ISOLATION VOLTAGE: (BV = 1500 Vr.m.s.)
*LOW OFFSET VOLTAGE
*LOW LED OPERATING CURRENT: IF = 2 mA
*SURFACE MOUNT AVAILABLE

APPLICATIONS
*MEASUREMENT EQUIPMENT

PS7200A-1A-E3, PS7200A-1A-E4, PS7200A-1A-F3, PS7200A-1A-F4

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General Description
The IXDN430/IXDI430/IXDD430/IXDS430 are high speed high current gate drivers specifically designed to drive MOSFETs and IGBTs to their minimum switching time and maximum
practical frequency limits. The IXD_430 can source and sink 30A of peak current while producing voltage rise and fall times of less than 30ns. The input of the drivers are compatible with TTL or CMOS and are fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction/current shoot-through is virtually eliminated in all
configurations. Their features and wide safety margin in operating voltage and power make the drivers unmatched in performance and value.
The IXD_430 incorporates a unique ability to disable the output under fault conditions. The standard undervoltage lockout is at 12.5V which can also be set to 8.5V in the IXDS430SI. When a logical low is forced into the Enable inputs, both final output stage MOSFETs (NMOS and PMOS) are turned off. As a result, the output of the IXDD430 enters a tristate mode and enables a Soft Turn-Off of the MOSFET when a short circuit is detected. This helps prevent damage that could occur to the MOSFET if it were to be switched off abruptly due to a dv/dt
over-voltage transient.
The IXDN430 is configured as a noninverting gate driver, and the IXDI430 is an inverting gate driver. The IXDS430 can be configured either as a noninverting or inverting driver. The IXD_430 are available in the standard 28-pin SIOC (SI-CT), 5-pin TO-220 (CI), and in the TO-263 (YI) surface mount packages. CT or 'Cool Tab' for the 28- pin SOIC package refers to the backside metal heatsink tab.

Features
*Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes
*Latch-Up Protected
*High Peak Output Current: 30A Peak
*Wide Operating Range: 8.5V to 35V
*Under Voltage Lockout Protection
*Ability to Disable Output under Faults
*High Capacitive Load Drive Capability: 5600 pF in <25ns
*Matched Rise And Fall Times
*Low Propagation Delay Time
*Low Output Impedance
*Low Supply Current

Applications
*Driving MOSFETs and IGBTs
*Motor Controls
*Line Drivers
*Pulse Generators
*Local Power ON / OFF Switch
*Switch Mode Power Supplies (SMPS)
*DC to DC Converters
*Pulse Transformer Driver
*Limiting di/dt Under Short Circuit
*Class D Switching Amplifiers

IXDD430YI, IXDD430CI, IXDI430YI, IXDI430CI, IXDN430YI, IXDN430CI, IXDS430SI

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DESCRIPTION
The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be
used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

FEATURES
*RDS(ON) = 0.29Ω @VGS = -10 V
*Low capacitance
*Low gate charge
*Fast switching capability
*Avalanche energy specified

12P10-TN3-R, 12P10-TN3-T

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GENERAL DESCRIPTION
The XP132A1275SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
The small SOP-8 package makes high density mounting possible.

FEATURES
Low On-State Resistance :
- Rds(on)=0.075Ω (Vgs=-4.5V)
- Rds(on)=0.115Ω (Vgs=-2.5V)
Ultra High-Speed Switching Driving Voltage : -2.5V
P-Channel Power MOSFET DMOS Structure Package : SOP-8

APPLICATIONS
*Notebook PCs
*Cellular and portable phones
*On-board power supplies
*Li-ion battery systems
TAG MOSFET, Power

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DESCRITION
This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.

FEATURES
*Fast switching with low EMI
*Low trr for high reliability
*Ultra low Crss for improved noise immunity
*Low gate charge
*Avalanche energy rated
*RoHS compliant

TYPICAL APPLICATIONS
*ZVS phase shifted and other full bridge
*Half bridge
*PFC and other boost converter
*Buck converter
*Single and two switch forward
*Flyback

APT7F120S

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