General Description
The IXDN402/IXDI402/IXDF402 consists of two 2 Amp CMOS high speed MOSFET drivers. Each output can source and sink 2A of peak current while producing voltage rise and fall times of less than 15ns to drive the latest IXYS MOSFETs & IGBTs. The input of the driver is TTL or CMOS compatible and is fully immune to latch up over the entire operating range. A patent-pending circuit virtually eliminates cross conduction and current shoot-through. Improved speed and drive capabilities are further enhanced by very low and matched rise and fall times.
The IXDN402 is configured as a dual non-inverting gate driver, the IXDI402 as a dual inverting gate driver, and the IXDF402 as a dual inverting + non-inverting gate driver.
The IXDN402/IXDI402/IXDF402 family are available in the standard 8 pin P-DIP (PI), SOP-8 (SI) and SOP-16 (SI-16) packages respectively.

Features
*Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes
*Latch-Up Protected Over Entire Operating Range
*High Peak Output Current: 2A Peak
*Wide Operating Range: 4.5V to 25V
*High Capacitive Load Drive Capability: 1000pF in <10ns
*Matched Rise And Fall Times
*Low Propagation Delay Time
*Low Output Impedance
*Low Supply Current
*Two Drivers in Single Chip

Applications
*Driving MOSFETs and IGBTs
*Motor Controls
*Line Drivers
*Pulse Generators
*Local Power ON/OFF Switch
*Switch Mode Power Supplies (SMPS)
*DC to DC Converters
*Pulse Transformer Driver
*Class D Switching Amplifiers

IXDN402PI, IXDN402SI, IXDN402SI-16, IXDI402PI, IXDI402SI, IXDI402SI-16, IXDF402PI

DESCRIPTION
The SPP2303 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

FEATURES
*-30V/-2.6A,RDS(ON)=130mΩ@VGS=- 10V
*-30V/-2.0A,RDS(ON)=180mΩ@VGS=-4.5V
*Super high density cell design for extremely low RDS (ON)
*Exceptional on-resistance and maximum DC current capability
*SOT-23-3L package design

APPLICATIONS
*Power Management in Note book
*Portable Equipment
*Battery Powered System
*DC/DC Converter
*Load Switch
*DSC
*LCD Display inverter

SPP2303S23RG

General Description
The IXDN402/IXDI402/IXDF402 consists of two 2 Amp CMOS high speed MOSFET drivers. Each output can source and sink 2A of peak current while producing voltage rise and fall times of less than 15ns to drive the latest IXYS MOSFETs & IGBTs. The input of the driver is TTL or CMOS compatible and is fully immune to latch up over the entire operating range. A patent-pending circuit virtually eliminates cross conduction and current shoot-through. Improved speed and drive capabilities are further enhanced by very low and matched rise and fall times.
The IXDN402 is configured as a dual non-inverting gate driver, the IXDI402 as a dual inverting gate driver, and the IXDF402 as a dual inverting + non-inverting gate driver. The IXDN402/IXDI402/IXDF402 family are available in the standard 8 pin P-DIP (PI), SOP-8 (SIA) and SOP-16 (SIA-16) packages. For enhanced thermal performance, the SOP-8 and SOP-16 are also available with an exposed grounded backmetal package as the SI and SI-16 respectively.

Features
*Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes
*Latch-Up Protected Over Entire Operating Range
*High Peak Output Current: 2A Peak
*Wide Operating Range: 4.5V to 25V
*High Capacitive Load Drive Capability: 1000pF in <10ns
*Matched Rise And Fall Times
*Low Propagation Delay Time
*Low Output Impedance
*Low Supply Current
*Two Drivers in Single Chip

Applications
*Driving MOSFETs and IGBTs
*Motor Controls
*Line Drivers
*Pulse Generators
*Local Power ON/OFF Switch
*Switch Mode Power Supplies (SMPS)
*DC to DC Converters
*Pulse Transformer Driver
*Class D Switching Amplifiers

IXDI402, IXDF402, IXDN402PI, IXDI402PI, IXDF402PI

DESCRIPTION
The 11N40 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

FEATURES
*RDS(ON) = 0.48Ω @VGS = 10 V
*Ultra low gate charge ( typical 27 nC )
*Low reverse transfer capacitance ( CRSS = typical 20 pF )
*Fast switching capability
*Avalanche energy specified
*Improved dv/dt capability, high ruggedness

11N40-TF3-T, 11N40L-TF3-T, 11N40G-TF3-T

DESCRIPTION
The SPP3095 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as DC/DC converter and Desktop computer power management.
The package is universally preferred for commercial industrial surface mount applications

FEATURES
*-30V/- 8A,RDS(ON)=100mΩ@VGS=- 10V
*-30V/- 6A,RDS(ON)=135mΩ@VGS=-4.5V
*Super high density cell design for extremely low RDS (ON)
*Exceptional on-resistance and maximum DC current capability
*TO-252-2L package design

APPLICATIONS
*Power Management in Desktop Computer
*DC/DC Converter
*LCD Display inverter

SPP3095T252RG

General Description
The IXDD414 is a high speed high current gate driver specifically designed to drive the largest MOSFETs and IGBTs to their minimum switching time and maximum practical frequency limits. The IXDD414 can source and sink 14A of peak current while producing voltage rise and fall times of less than 30ns. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction/current shootthrough is virtually eliminated in the IXDD414. Its features and wide safety margin in operating voltage and power make the IXDD414 unmatched in performance and value.
The IXDD414 incorporates a unique ability to disable the output under fault conditions. When a logical low is forced into the Enable input, both final output stage MOSFETs (NMOS and PMOS) are turned off. As a result, the output of the IXDD414 enters a tristate mode and achieves a Soft Turn-Off of the MOSFET/IGBT when a short circuit is detected. This helps prevent damage that could occur to the MOSFET/IGBT if it were to be switched off abruptly due to a dv/dt over-voltage transient.
The IXDD414 is available in the standard 8-pin P-DIP (PI), 5-pin TO-220 (CI) and in the TO-263 (YI) surface-mount package.

Features
*Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes.
*Latch-Up Protected
*High Peak Output Current: 14A Peak
*Wide Operating Range: 4.5V to 25V
*Ability to Disable Output under Faults
*High Capacitive Load Drive Capability: 15nF in <30ns
*Matched Rise And Fall Times
*Low Propagation Delay Time
*Low Output Impedance
*Low Supply Current

Applications
*Driving MOSFETs and IGBTs
*Limiting di/dt under Short Circuit
*Motor Controls
*Line Drivers
*Pulse Generators
*Local Power ON/OFF Switch
*Switch Mode Power Supplies (SMPS)
*DC to DC Converters
*Pulse Transformer Driver
*Class D Switching Amplifiers

IXDD414YI, IXDD414CI

Description
This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for high efficiency power management applications.

Features
*Low on-resistance
*Fast switching speed
*Low gate drive
*SO8 package

Applications
*DC-DC Converters
*Power management functions
*Disconnect switches
*Motor control

ZXMP3F37N8TA

DESCRIPTION
The 7P20 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. They are also well suited for high efficiency switching DC/DC converters.

FEATURES
*RDS(ON) ≦ 0.69Ω @VGS = -10 V
*Ultra low gate charge ( typical 19 nC )
*Low reverse transfer capacitance ( CRSS = typical 25 pF )
*Fast switching capability
*Avalanche energy specified
*Improved dv/dt capability, high ruggedness

7P20-TN3-R, 7P20L-TN3-R, 7P20G-TN3-R

DESCRIPTION
The SPN1443A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

FEATURES
*30V/2.8A,RDS(ON)= 95mΩ@VGS=10V
*30V/2.3A,RDS(ON)= 105mΩ@VGS=4.5V
*30V/1.5A,RDS(ON)= 135mΩ@VGS=2.5V
*Super high density cell design for extremely low RDS (ON)
*Exceptional on-resistance and maximum DC current capability
*SOT-353 ( SC–70 ) package design

APPLICATIONS
*Power Management in Note book
*Portable Equipment
*Battery Powered System
*DC/DC Converter
*Load Switch
*DSC
*LCD Display inverter

SPN1443AS35RG

DESCRIPTION
The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=30W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum). The nominal output power becomes available at the state that VGG is 4V (typical) and 5V (maximum).
At VGG=5V, the typical gate currents are 1mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES
*Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
*Pout>30W, ηT>42% @ VDD=12.5V, VGG=5V, Pin=50mW
*Broadband Frequency Range: 400-470MHz
*Metal shield structure that makes the improvements of spurious radiation simple
*Low-Power Control Current IGG=1mA (typ) @ VGG=5V
*Module Size: 67 x 18 x 9.9 mm
*Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power.

RA30H4047M1-101