General Description
The HMC-VVD102 is a monolithic GaAs PIN diode ased Voltage Variable Attenuator (VVA) which exhibits low insertion loss, high IP3 and wide dynamic range. All bond pads and the die backside are Ti/Au metallized and the PIN diode devices are fully passivated for reliable operation. This wideband MMIC VVA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes

Features
*Low Insertion Loss: 1.5 dB
*Wide Dynamic Range: 18 dB
*High Input IP3: +17 dBm
*Analog Control Voltage: -4 to +4V
*Die Size: 1.01 x 1.175 x 0.1 mm

Typical Applications
This HMC-VVD102 is ideal for:
*Point-to-Point Radios
*Point-to-Multi-Point Radios
*Military Radios, Radar & ECM
*Test Equipment & Sensors
*Space

General Description
Mimix Broadband’s 33.0-40.0 GHz GaAs MMIC transmitter has a small signal conversion gain of 8.0 dB with a 30.0 dB LO/RF isolation. The device has a pair of sub-harmonic mixers configured to form an image reject mixer which requires an LO at 15.5-21.5 GHz. This is followed by a two stage LNA. The image reject mixer reduces the need for unwanted sideband filtering before the power amplifier. The use of the sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features
*Sub-Harmonic Transmitter
*Low DC Power Consumption
*Optional Power Bias
*8.0 dB Conversion Gain
*30 dB LO/RF Isolation
*100% On-Wafer RF and DC Testing
*100% Visual Inspection to MIL-STD-883 Method 2010

XU1001-BD-000V, XU1001-BD-000W, XU1001-BD-EV1

Product Description
The SPF-5043Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF-5043Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. A high maximum input power specification make it ideal for high dynamic range receivers.

Features
*Ultra-Low Noise Figure=0.8dB @ 900MHz
*Gain=18.2dB @ 900MHz
*High Linearity: OIP3=35dBm @ 1900MHz
*P1dB=21dBm @ 1900MHz
*Single-Supply Operation: 5V @ IDQ=46mA
*Flexible Biasing Options: 3V to 5V, Adjustable Current
*Broadband Internal Matching

Applications
*Cellular, PCS, W-CDMA, ISM, WiMAX Receivers
*Low Noise, High Linearity Gain Block Applications

SPF-5043Z-EVB1

General Description
The HMC398QS16G & HMC398QS16GE are single chip GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC398QS16G & HMC398QS16GE integrate resonators, negative resistance devices, varactor diodes and divide-by-8 prescalers. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +7 dBm typical from a 5V supply voltage. The voltage controlled oscillator is packaged in a low cost, surface mount 16 leaded QSOP package with an exposed base for improved RF and thermal performance. The HMC398QS16G & HMC398QS16GE require no external components

Features
*Pout: +7 dBm
*Phase Noise: -105 dBc/Hz @100 KHz Typ.
*No External Resonator Needed
*Single Supply: 5V @ 325 mA
*QSOP16G SMT Package

Typical Applications
Low noise MMIC VCO w/Divide-by-8 for Ku-Band applications such as:
*Point-to-Point Radios
*Point-to-Multi-Point Radios / LMDS
*VSAT

398QS16GE

Product Description
The SPF-5122Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF-5122Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. A high maximum input power specification make it ideal for high dynamic range receivers.

Features
*Ultra-Low Noise Figure=0.60dB @ 900MHz
*Gain=18.9dB @ 900MHz
*High Linearity: OIP3=40.5dBm @ 1900MHz
*Channel Power=13.4dBm (-65dBc IS95 ACPR, 880MHz)
*P1dB=23.4dBm @ 1900MHz
*Single-Supply Operation: 5V @ Idq=90mA
*Flexible Biasing Options: 3-5V, Adjustable Current
*Broadband Internal Matching

Applications
*Cellular, PCS, W-CDMA, ISM, WiMAX Receivers
*PA Driver Amplifier
*Low Noise, High Linearity Gain Block Applications

SPF-5122Z-EVB1

General Description
Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for radar applications.

Features
*X-Band 10W Power Amplifier
*21.0 dB Large Signal Gain
*+40.0 dBm Saturated Output Power
*30% Power Added Efficiency
*On-chip Gate Bias Circuit
*100% On-Wafer RF, DC and Output Power Testing
*100% Visual Inspection to MIL-STD-883 Method 2010

XP1006-BD-000V, XP1006-BD-EV1

General Description
The HMC-C051 is a general purpose double balanced mixer housed in a miniature hermetic module that can be used as an upconverter or downconverter between 11 and 20 GHz. This mixer is fabricated in a GaAs MESFET process, and requires no external components or matching circuitry. The HMC-C051 provides excellent LO to RF and LO to IF isolation due
to optimized balun structures. The module features removable SMA connectors which can be detached to allow direct connection of the I/O pins to a microstrip or coplanar circuit.

Features
*High LO/RF Isolation: 43 dB
*Passive Double Balanced Topology
*Low Conversion Loss: 7 dB
*Wide IF Bandwidth: DC - 6 GHz
*Robust 1,000V ESD, Class 1C
*Hermetically Sealed Module
*Field Replaceable SMA Connectors
*-55 to +85 °C Operating Temperature

Typical Applications
*The HMC-C051 is ideal for:
- Point-to-Point Radios
- Point-to-Multi-Point Radios & VSAT
- Test Equipment & Sensors
- Military End-Use

General Description
The XP1035-BD is a linear power amplifier that operates over the 5.9-9.5GHz frequency band. The device provides 26 dB gain and 39 dBm Output Third Order Intercept Point (OIP3) across the band and is comprised of a three stage power amplifier with an integrated, temperature compensated on-chip power detector. The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the part. The
device is manufactured in 0.5um GaAs PHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. The XP1035-BD is well suited for Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features
*26 dB Small Signal Gain
*39 dBm Third Order Intercept Point (OIP3)
*Integrated Power Detector
*100% On-Wafer RF Testing

General Description
Mimix Broadband’s four stage 35.0-43.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0dB with a +24.0 dBm saturated output power.
The device also includes Lange couplers to achieve good output return loss.
This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features
* Excellent Saturated Output Stage
* Balanced Design Provides Good Output Match
* 26.0 dB Small Signal Gain
* +24.0 dBm Saturated Output Power
* 100% On-Wafer RF, DC and Output Power Testing
* 100% Visual Inspection to MIL-STD-883 Method 2010

XP1005-BD-000V
XP1005-BD-EV1

General Description
The HMC-APH462 is a high dynamic range, two stage GaAs HEMT MMIC 0.8 Watt Power Amplifi er which operates between 15 and 27 GHz.
The HMC-APH462 provides 17 dB of gain, and an output power of +29dBm at 1 dB compression from a +5V supply voltage.
All bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable operation.
The HMC-APH462 GaAs HEMT MMIC 1Watt Power Amplifi er is compatible with conventional
die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications.
All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.

Features
* Output IP3: +37 dBm
* P1dB: +29 dBm
* Gain: 17 dB
* Supply Voltage: +5V
* 50 Ohm Matched Input/Output
* Die Size: 3.70 x 2.62 x 0.1 mm

Applications
* Point-to-Point Radios
* Point-to-Multi-Point Radios
* VSAT
* Military & Space