General Description
This device contains six independent gates each of which performs a buffer function.
The open-collector outputs require external pull-up resistors for proper logical operation.

DM7407M
DM7407N
TAG Buffer, HEX

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General Description
The VHC14 is an advanced high speed CMOS Hex Schmitt Inverter fabricated with silicon gate CMOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.
Pin configuration and function are the same as the VHC04 but the inputs have hysteresis
between the positive-going and negative-going input thresholds, which are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals, thus providing greater noise margin than conventional inverters.
An input protection circuit ensures that 0V to 7V can be applied to the input pins without regard to the supply voltage.
This device can be used to interface 5V to 3V systems and two supply systems such as battery back up.
This circuit prevents device destruction due to mismatched supply and input voltages.

Features
* High Speed: tPD = 5.5 ns (typ) at VCC = 5V
* Low power dissipation: ICC = 2 mA (Max) at TA = 25°C
* High noise immunity: VNIH = VNIL = 28% VCC (Min)
* Power down protection is provided on all inputs
* Low noise: VOLP = 0.8V (Max)
* Pin and function compatible with 74HC14

74VHC14M
74VHC14SJ
74VHC14MTC
74VHC14N

TAG HEX, Inverter

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* Operating Range 2-V to 5.5-V VCC
* Contain Six Flip-Flops With Single-Rail Outputs
* Applications Include:
– Buffer/Storage Registers
– Shift Registers
– Pattern Generators
* Latch-Up Performance Exceeds 250 mA Per JESD 17
* ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 200-V Machine Model (A115-A)
– 1000-V Charged-Device Model (C101)

description
The ’AHC174 devices are positive-edge-triggered D-type flip-flops with a direct clear (CLR) input and are designed for 2-V to 5.5-V VCC operation.
Information at the data (D) inputs that meets the setup time requirements is transferred to the
outputs on the positive-going edge of the clock (CLK) pulse. Clock triggering occurs at a
particular voltage level and is not directly related to the transition time of the positive-going edge of CLK. When CLK is at either the high or low level, the D input has no effect at the output.

SN74AHC174N
SN74AHC174D
SN74AHC174DR
SN74AHC174NSR
SN74AHC174DBR

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* Advanced Process Technology
* Dynamic dv/dt Rating
* 175°C Operating Temperature
* Fast Switching
* P-Channel
* Fully Avalanche Rated
* Lead-Free

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TAG HEX, MOSFET, Power

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FEATURES
* Applications:
– Wave and pulse shapers
– Astable multivibrators
– Monostable multivibrators.
* Complies with JEDEC standard no. 7A
* ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
* Specified from -40 to +85 °C and -40 to +125 °C.

DESCRIPTION
 The 74HC14 and 74HCT14 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A.
 The 74HC14 and 74HCT14 provide six inverting buffers with Schmitt-trigger action. They are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals.

74HCT14 74HC14D 74HCT14D 74HC14DB 74HCT14DB 74HC14N 74HCT14N 74HC14PW
74HCT14PW 74HC14BQ 74HCT14BQ

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