Description
The AFM04P3-212, 213 are high performance power GaAs MESFET chips having a gate length of 0.25 mm and a total gate periphery of 400 mm. These devices have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications in oscillator and amplifier circuits.They also have excellent noise performance and can be used in the first and second stage of low noise amplifier design. The AFM04P3 employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part.

Features
*Low Noise Figure, 0.6 dB @ 4 GHz
*20 dBm Output Power @ 18 GHz
*High Associated Gain, 13 dB @ 4 GHz
*High Power Added Efficiency, 25%
*Broadband Operation, DC–26 GHz
*Available in Tape and Reel Packaging

AFM04P3-213

General Description
Mimix Broadband’s 17.0-25.0 GHz GaAs packaged receiver has a noise figure of 2.5 dB and 20.0 dB image rejection across the band. This device is a two stage balanced LNA followed by an image reject sub-harmonic anti-parallel diode mixer and includes an integrated LO buffer amplifer. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. The use of a sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This device uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a 7x7 mm QFN Surface Mount Laminate Package offering excellent RF and thermal properties and is RoHS compliant. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features
*Sub-harmonic Receiver
*Integrated LNA, LO Buffer, Image Reject Mixer
*7x7 mm, QFN
*+2.0 dBm LO Drive Level
*2.5 dB Noise Figure
*20.0 dB Image Rejection
*100% On-Wafer RF, DC and Noise Figure Testing

XR1006-QD-0N00, XR1006-QD-0N0T, XR1006-QD-EV1

General Description
Mimix Broadband’s 4.5-10.5 GHz QFN packaged receiver has a noise figure of 1.8 dB and 13.0 dB conversion gain across the band. The device integrates an LNA, image reject mixer and LO buffer amplifier within a fully molded 4x4mm QFN package. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This device uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. This device is well suited for Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features
*Integrated LNA, Mixer and LO Buffer Amplifier
*1.8 dB Noise Figure
*13.0 dB Conversion Gain
*4x4mm QFN Package
*100% RF, DC and NF Testing

XR1011-QH-0G00, XR1011-QH-0G0T, XR1011-QH-EV1

General Description
Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for radar applications.

Features
*X-Band 10W Power Amplifier
*21.0 dB Large Signal Gain
*+40.0 dBm Saturated Output Power
*30% Power Added Efficiency
*On-chip Gate Bias Circuit
*100% On-Wafer RF, DC and Output Power Testing
*100% Visual Inspection to MIL-STD-883 Method 2010

XP1006-BD-000V, XP1006-BD-EV1

General Description
The HMC-C051 is a general purpose double balanced mixer housed in a miniature hermetic module that can be used as an upconverter or downconverter between 11 and 20 GHz. This mixer is fabricated in a GaAs MESFET process, and requires no external components or matching circuitry. The HMC-C051 provides excellent LO to RF and LO to IF isolation due
to optimized balun structures. The module features removable SMA connectors which can be detached to allow direct connection of the I/O pins to a microstrip or coplanar circuit.

Features
*High LO/RF Isolation: 43 dB
*Passive Double Balanced Topology
*Low Conversion Loss: 7 dB
*Wide IF Bandwidth: DC - 6 GHz
*Robust 1,000V ESD, Class 1C
*Hermetically Sealed Module
*Field Replaceable SMA Connectors
*-55 to +85 °C Operating Temperature

Typical Applications
*The HMC-C051 is ideal for:
- Point-to-Point Radios
- Point-to-Multi-Point Radios & VSAT
- Test Equipment & Sensors
- Military End-Use

DESCRIPTION
The NEZ1011-3E and NEZ1414-3E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 W external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The device incorporates a WSi (tungsten silicide) gate structure for high reliability.

FEATURES
*High Output Power : Po (1 dB) = +34.0 dBm typ.
*High Linear Gain : 8.5 dB typ. (NEZ1011-3E), 7.5 dB typ. (NEZ1414-3E)
*High Efficiency : 30 % typ.
*Input and Output Internally Matched for Optimum performance

NEZ1414-3E

Product Description
The RF3807 is a GaAs pre-driver power amplifier, specifically designed for wireless
infrastructure applications.
Using a highly reliable GaAs HBT fabrication process, this high-performance single-stage amplifier achieves high output power over a broad frequency range.
The RF3807 also provides excellent efficiency and thermal stability through the use of a thermally-enhanced surface-mount plastic-slug package.
Ease of integration is accomplished through the incorporation of an optimized evaluation board design provided to achieve proper 50Ω operation.
Various evaluation boards are available to address a broad range of wireless infrastructure applications: NMT 450MHz, GSM850, GSM900, DCS1800, PCS1900, and UMTS2100.

Features
* Output Power>0.5W P1dB
* High Linearity
* High Power-Added Efficiency
* Thermally-Enhanced Packaging
* Broadband Platform Design Approach, 450MHz to 2700MHz

Applications
* GaAs Pre-Driver for Basestation Amplifiers
* PA Stage for Commercial Wireless Infrastructure
* Class AB Operation for NMT, GSM, DCS, PCS, UMTS, and WLAN Transceiver Applications
* 2nd/3rd Stage LNA for Wireless Infrastructure

RF3807PCK-410
RF3807PCK-411
RF3807PCK-412
RF3807PCK-413
RF3807PCK-414
RF3807PCK-415

General Description
The HMC-APH462 is a high dynamic range, two stage GaAs HEMT MMIC 0.8 Watt Power Amplifi er which operates between 15 and 27 GHz.
The HMC-APH462 provides 17 dB of gain, and an output power of +29dBm at 1 dB compression from a +5V supply voltage.
All bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable operation.
The HMC-APH462 GaAs HEMT MMIC 1Watt Power Amplifi er is compatible with conventional
die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications.
All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.

Features
* Output IP3: +37 dBm
* P1dB: +29 dBm
* Gain: 17 dB
* Supply Voltage: +5V
* 50 Ohm Matched Input/Output
* Die Size: 3.70 x 2.62 x 0.1 mm

Applications
* Point-to-Point Radios
* Point-to-Multi-Point Radios
* VSAT
* Military & Space

General Description
 Mimix Broadband’s 32.0-42.0 GHz GaAs MMIC sub-harmonic image reject mixer can be used as an upor down-converter.
The device has a conversion loss of 9.0 dB with 18.0 dB image rejection across the band.
I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband.
This MMIC uses Mimix Broadband’s 2 μm GaAs HBT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features
* Sub-harmonic Image Reject Mixer
* GaAs HBT Technology
* 9.0 dB Conversion Loss
* 18.0 dB Image Rejection
* 100% On-Wafer RF Testing
* 100% Visual Inspection to MIL-STD-883
* Method 2010

XM1003-BD-000V
XM1003-BD-EV1

Typical Applications
The HMC128 is ideal for:
• Microwave & VSAT Radios
• Test Equipment
• Military EW, ECM, C3I
• Space Telecom


Features
Conversion Loss: 7 dB
LO to RF and IF Isolation: >36 dB
Input IP3: +18 dBm
No DC Bias Required
Die Size: 1.45 x 1.45 x 0.1 mm

General Description
The HMC128 is a miniature double-balanced mixer chip that can be used as an upconverter or downconverter.
The device is a passive diode/balun type mixer with high dynamic range. Noise fi gure is essentially equal to the conversion loss. The mixer can handle larger signal levels than active mixers due to the high third order intercept. MMIC implementation provides exceptional balance in the circuit resulting in high LO/ RF and LO/IF isolations. This mixer can operate over a wide LO Drive input of +9 to +15 dBm.