DESCRIPTION
MB85RS256 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85RS256 adopts the Serial Peripheral Interface (SPI).
The MB85RS256 is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS256 can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RS256 does not take long time to write data unlike Flash memories nor E2PROM, and MB85RS256 takes no wait time.

FEATURES
*Bit configuration : 32,768 words × 8 bits
*Operating power supply voltage : 3.0 V to 3.6 V
*Operating frequency : 15 MHz (Max)
*Serial Peripheral Interface : SPI (Serial Peripheral Interface) Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
*Operating temperature range : −20 °C to +85 °C
*Data retention : 10 years (+55 °C)
*High endurance : 10 Billion Read/writes
*Package : 8-pin plastic SOP (FPT-8P-M02)

MB85RS256PNF-G-JNE1, MB85RS256PNF-G-JN-ERE1
TAG CMOS, FRAM, Memory, SPI

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DESCRIPTIONS
The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
The MB85R2001 is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R2001 can be used for at least 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
The MB85R2001 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.

FEATURES
* Bit configuration : 262,144 words × 8 bits
* Read/write endurance : 1010 times/bit (Min)
* Operating power supply voltage : 3.0 V to 3.6 V
* Operating temperature range : − 20 °C to + 85 °C
* Data retention : 10 years ( + 55 °C)
* Package : 48-pin plastic TSOP (1)

MB85R2001PFTN-GE1
TAG CMOS, FRAM, Memory

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