DESCRIPTION
The SPP2303 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

FEATURES
*-30V/-2.6A,RDS(ON)=130mΩ@VGS=- 10V
*-30V/-2.0A,RDS(ON)=180mΩ@VGS=-4.5V
*Super high density cell design for extremely low RDS (ON)
*Exceptional on-resistance and maximum DC current capability
*SOT-23-3L package design

APPLICATIONS
*Power Management in Note book
*Portable Equipment
*Battery Powered System
*DC/DC Converter
*Load Switch
*DSC
*LCD Display inverter

SPP2303S23RG

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DESCRIPTION
The SPP3095 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as DC/DC converter and Desktop computer power management.
The package is universally preferred for commercial industrial surface mount applications

FEATURES
*-30V/- 8A,RDS(ON)=100mΩ@VGS=- 10V
*-30V/- 6A,RDS(ON)=135mΩ@VGS=-4.5V
*Super high density cell design for extremely low RDS (ON)
*Exceptional on-resistance and maximum DC current capability
*TO-252-2L package design

APPLICATIONS
*Power Management in Desktop Computer
*DC/DC Converter
*LCD Display inverter

SPP3095T252RG

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Description
This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for high efficiency power management applications.

Features
*Low on-resistance
*Fast switching speed
*Low gate drive
*SO8 package

Applications
*DC-DC Converters
*Power management functions
*Disconnect switches
*Motor control

ZXMP3F37N8TA

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DESCRIPTION
The SPN1443A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

FEATURES
*30V/2.8A,RDS(ON)= 95mΩ@VGS=10V
*30V/2.3A,RDS(ON)= 105mΩ@VGS=4.5V
*30V/1.5A,RDS(ON)= 135mΩ@VGS=2.5V
*Super high density cell design for extremely low RDS (ON)
*Exceptional on-resistance and maximum DC current capability
*SOT-353 ( SC–70 ) package design

APPLICATIONS
*Power Management in Note book
*Portable Equipment
*Battery Powered System
*DC/DC Converter
*Load Switch
*DSC
*LCD Display inverter

SPN1443AS35RG

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DESCRIPTION
The SPC6601 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.

FEATURES
*N-Channel
-30V/2.8A,RDS(ON)= 68mΩ@VGS=10V
-30V/2.3A,RDS(ON)= 78mΩ@VGS=4.5V
-30V/1.5A,RDS(ON)= 108mΩ@VGS=2.5V
*P-Channel
-30V/-2.8A,RDS(ON)=105mΩ@VGS=- 10V
-30V/-2.5A,RDS(ON)=120mΩ@VGS=-4.5V
-30V/-1.5A,RDS(ON)=150mΩ@VGS=-2.5V
*Super high density cell design for extremely low RDS (ON)
*Exceptional on-resistance and maximum DC current capability
*TSOP– 6P package design

APPLICATIONS
*Power Management in Note book
*Portable Equipment
*Battery Powered System
*DC/DC Converter
*Load Switch
*DSC
*LCD Display inverter

SPC6601ST6RG

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DESCRIPTION
The SPC1016 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.

FEATURES
*N-Channel
- 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V
- 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
- 20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V
*P-Channel
- 20V/0.45A,RDS(ON)=0.52Ω@VGS=-4.5V
- 20V/0.35A,RDS(ON)=0.70Ω@VGS=-2.5V
- 20V/0.25A,RDS(ON)=0.95Ω@VGS=-1.8V
*Super high density cell design for extremely low RDS (ON)
*exceptional on-resistance and maximum DC current capability
*SOT-563 (SC-89-6L) package design

APPLICATIONS
*Power Management in Note book
*Portable Equipment
*Battery Powered System
*DC/DC Converter
*Load Switch
*DSC
*LCD Display inverter

SPC1016S56RG

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