GENERAL DESCRIPTION
 ALD110802/ALD110902 are monolithic quad/dual N-Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS technology.
These devices are intended for low voltage, small signal applications.
The ALD110802/ALD110902 MOSFETS are designed and built for exceptional device electrical characteristics matching.
Since these devices are on the same monolithic chip, they also exhibit excellent tempco tracking characteristics.
They are versatile circuit elements useful as design components for a broad range of analog applications, such as basic building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications.
For most applications, connect V- and N/C pins to the most negative voltage potential in the system and V+ pin to the most positive voltage potential (or left open unused).
All other pins must have voltages within these voltage limits.
The ALD110802/ALD110902 devices are built for minimum offset voltage and differential thermal response, and they are suited for switching and amplifying applications in <+0.1V to +10V systems where low input bias current, low input capacitance and fast switching speed are desired, as these devices exhibit well controlled turn-off and sub-threshold characteristics and can be biased and operated in the sub-threshold region.
Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment.
The ALD110802/ALD110902 are suitable for use in very low operating voltage or very low power (nanowatt), precision applications which require very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect Transistors result from extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is specified at 30pA at room temperature.
For example, DC beta of the device at a drain current of 3mA and input leakage current of 30pA at 25°C is = 3mA/30pA = 100,000,000.

FEATURES
* Enhancement-mode (normally off)
* Precision Gate Threshold Voltage of +0.2V
* Matched MOSFET to MOSFET characteristics
* Tight lot to lot parametric control
* Low input capacitance
* VGS(th) match (VOS) to 10mV
* High input impedance — 1012Ω typical
* Positive, zero, and negative VGS(th) temperature coefficient
* DC current gain >108
* Low input and output leakage currents

APPLICATIONS
* Ultra low power (nanowatt) analog and digital circuits
* Ultra low operating voltage(<0.2V) circuits
* Sub-threshold biased and operated circuits
* Precision current mirrors and current sources
* Nano-Amp current sources
* High impedance resistor simulators
* Capacitive probes and sensor interfaces
* Differential amplifier input stages
* Discrete Voltage comparators and level shifters
* Voltage bias circuits
* Sample and Hold circuits
* Analog and digital inverters
* Charge detectors and charge integrators
* Source followers and High Impedance buffers
* Current multipliers
* Discrete Analog switches / multiplexers

ALD110902
ALD110802PC
ALD110802SC
ALD110902PA
ALD110902SA

DESCRIPTION
 The SPN2302A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.

FEATURES
* 20V/4.0A,RDS(ON)=75mΩ@VGS=4.5V
* 20V/3.4A,RDS(ON)=95mΩ@VGS=2.5V
* 20V/2.8A,RDS(ON)=135mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOT-23-3L package design

APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* DSC
* LCD Display inverter

SPN2302AS23RG

GENERAL DESCRIPTION
ALD111933 are monolithic dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD® CMOS technology.
These devices are intended for low voltage, small signal applications.
ALD111933 MOSFETs are designed and built with exceptional device electrical characteristics matching.
Since these devices are on the same monolithic chip, they also exhibit excellent tempco tracking characteristics.
Each device is versatile as a circuit element and is a useful design component for a broad range of analog applications.
They are basic building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications.
For most applications, connect V- and N/C pins to the most negative voltage potential in the system.
All other pins must have voltages within these voltage limits.
The ALD111933 devices are built for minimum offset voltage and differential thermal response, and they are designed for switching and amplifying applications in +3.0V to +10V systems where low input bias current, low input capacitance and fast switching speed are desired.
Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment.
The ALD111933 are suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is specified at 30pA at room temperature.
For example, DC beta of the device at a drain current of 3mA and input leakage current of 30pA at 25°C is = 3mA/30pA = 100,000,000.

FEATURES
• Enhancement-mode (normally off)
• Standard Gate Threshold Voltages: +3.3V
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Parallel connection of MOSFETs to increase drain currents
• Low input capacitance
• VGS(th) match to 20mV
• High input impedance — 1012Ω typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >108
• Low input and output leakage currents

APPLICATIONS
• Precision current mirrors
• Precision current sources
• Voltage choppers
• Differential amplifier input stages
• Discrete voltage comparators
• Voltage bias circuits
• Sample and Hold circuits
• Analog inverters
• Level shifters
• Source followers and buffers
• Current multipliers
• Discrete analog multiplexers/matrices
• Discrete analog switches
• Low current voltage clamps
• Voltage detectors
• Capacitive probes
• Sensor interfaces
• Peak detectors
• Level shifters
• Multiple preset voltage hysteresis circuits (with other VGS(th) EPAD MOSFETS)
• Energy harvesting circuits
• Zero standby power voltage monitors

ALD111933PAL
ALD111933MAL
ALD111933SAL

Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications.
• Typical Two-Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEP
Power Gain - 15.5 dB
Drain Efficiency - 36%
IMD - -34 dBc
• Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band (2130-2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability
Power Gain - 15.5 dB
Drain Efficiency - 15%
IM3 @ 10 MHz Offset - -47 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset - -49 dBc in 3.84 MHz Channel Bandwidth
• Typical Single - Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band (1930 -1990 MHz), IS-95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain - 15.5 dB
Drain Efficiency- 16% ACPR @ 885 kHz Offset = -60 dBc in 30 kHz Bandwidth
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 4 Watts Avg., Full Frequency Band (1805 -1880 MHz)
Power Gain - 16 dB
Drain Efficiency - 33%
EVM - 1.3% rms
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW Output Power

Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

MRF6S20010GNR1

GENERAL DESCRIPTION
*20V N-Channel Enhancement-Mode MOSFET
*Vds=20V
*RDS(ON)=30 mΩ (TYP.) , VGS @2.5V, Ids@5.2A
*RDS(ON)=22 mΩ (TYP.), VGS @4.5V, Ids@6AV

FEATURES
*Advanced trench process technology
*High Density Cell Design For Ultra Low On-Resistance
*High Power and Current handing capacity
*Fully Characterized Avalanche Voltage and Current
*Ideal for Li ion battery pack applications

APPLICATIONS
*Power Management in Notebook
*Portable Equipment
*Battery Powered System
*DC/DC Converter
*Load Switch
*DSC
*LCD Display inverter

Description
The GE07N70C-A is specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits.

Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching

DESCRIPTION
The SPC4539 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.

FEATURES
* N-Channel
30V/6.8A,RDS(ON)= 34mΩ@VGS= 10V
30V/5.6A,RDS(ON)= 46mΩ@VGS= 4.5V
* P-Channel
-30V/-5.7A,RDS(ON)= 60mΩ@VGS=- 10V
-30V/-4.4A,RDS(ON)= 80mΩ@VGS=-4.5V
* Super high density cell design for extremely low
RDS (ON)
* Exceptional on-resistance and maximum DC
current capability
* SOP – 8P package design

APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* DSC
* LCD Display inverter

General features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 6W with 15dB gain @ 945MHz / 28V
■ New RF plastic package

Description
The PD57006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band commercial and industrial applications.

It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57006 boasts the
excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.

PD57006’s superior linearity performance makes it an ideal solution for car mobile radio.

The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been specially optimized for RF needs and offers
excellent RF performances and ease of assembly.

Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294)


PD57006-E
PD57006S-E

DESCRIPTION
The SPP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* DSC
* LCD Display inverter

FEATURES
* -20V/-2.8A,RDS(ON)=120mΩ@VGS=-4.5V
* -20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOT-23-3L package design

SPP2301S23RG

General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features
*High density cell design for low RDS(ON).
*Voltage controlled small signal switch.
*Rugged and reliable.
*High saturation current capability.