ALD110802 - VQUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY
Advanced Linear Devices 2008/05/06 09:36GENERAL DESCRIPTION
ALD110802/ALD110902 are monolithic quad/dual N-Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS technology.
These devices are intended for low voltage, small signal applications.
The ALD110802/ALD110902 MOSFETS are designed and built for exceptional device electrical characteristics matching.
Since these devices are on the same monolithic chip, they also exhibit excellent tempco tracking characteristics.
They are versatile circuit elements useful as design components for a broad range of analog applications, such as basic building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications.
For most applications, connect V- and N/C pins to the most negative voltage potential in the system and V+ pin to the most positive voltage potential (or left open unused).
All other pins must have voltages within these voltage limits.
The ALD110802/ALD110902 devices are built for minimum offset voltage and differential thermal response, and they are suited for switching and amplifying applications in <+0.1V to +10V systems where low input bias current, low input capacitance and fast switching speed are desired, as these devices exhibit well controlled turn-off and sub-threshold characteristics and can be biased and operated in the sub-threshold region.
Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment.
The ALD110802/ALD110902 are suitable for use in very low operating voltage or very low power (nanowatt), precision applications which require very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect Transistors result from extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is specified at 30pA at room temperature.
For example, DC beta of the device at a drain current of 3mA and input leakage current of 30pA at 25°C is = 3mA/30pA = 100,000,000.
FEATURES
* Enhancement-mode (normally off)
* Precision Gate Threshold Voltage of +0.2V
* Matched MOSFET to MOSFET characteristics
* Tight lot to lot parametric control
* Low input capacitance
* VGS(th) match (VOS) to 10mV
* High input impedance — 1012Ω typical
* Positive, zero, and negative VGS(th) temperature coefficient
* DC current gain >108
* Low input and output leakage currents
APPLICATIONS
* Ultra low power (nanowatt) analog and digital circuits
* Ultra low operating voltage(<0.2V) circuits
* Sub-threshold biased and operated circuits
* Precision current mirrors and current sources
* Nano-Amp current sources
* High impedance resistor simulators
* Capacitive probes and sensor interfaces
* Differential amplifier input stages
* Discrete Voltage comparators and level shifters
* Voltage bias circuits
* Sample and Hold circuits
* Analog and digital inverters
* Charge detectors and charge integrators
* Source followers and High Impedance buffers
* Current multipliers
* Discrete Analog switches / multiplexers
ALD110902
ALD110802PC
ALD110802SC
ALD110902PA
ALD110902SA
댓글을 달아 주세요 Comment