Description
TSIL6400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages.
In comparison with the standard GaAs on GaAs technology these emitters achieve about 70 % radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters.

Features
*Extra high radiant power and radiant intensity
*Low forward voltage
*Suitable for high pulse current operation
*Standard T–1 (ø 5 mm) package
*Angle of half intensity j = ± 17
*Peak wavelength p = 925 nm
*High reliability
*Good spectral matching to Si photodetectors

Applications
*Infrared remote control units with high power requirements
*Free air transmission systems
*Infrared source for optical counters and card readers
*IR source for smoke detectors

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FEATURES
*High case dielectric strength
*High surge current capability
*High reliability
*High efficiency
*Low reverse current
*Low forward voltage drop
*Pb / RoHS Free

MECHANICAL DATA
*Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation
*Epoxy : UL94V-O rate flame retardant
*Terminals : plated .25" (6.35 mm). Faston
*Polarity : Polarity symbols marked on case
*Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge
and mounting surface for maximum heat transfer efficiency.
*Weight : 16 grams

CT1500R. CT1501R. CT1502R. CT1504R. CT1506R. CT1508R. CT1510R

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FEATURES
*Silicon Planar Power Zener Diodes
*The Zener voltages are graded according to the internation E 24 standard.
*Standard Zener voltage tolerance is ± 5 %. Replace "C" with "B" for ± 2 % tolerance.
*Pb / RoHS Free

BZX384C2V4, BZX384C2V7, ,BZX384C3V0, BZX384C3V3, BZX384C3V6, BZX384C3V9, BZX384C4V3, BZX384C4V7, BZX384C5V1, BZX384C5V6, BZX384C6V2, BZX384C6V8, BZX384C7V5, BZX384C8V2, BZX384C9V1, BZX384C10, BZX384C11, BZX384C12, BZX384C13, BZX384C15, BZX384C16, BZX384C18, BZX384C20, BZX384C22, BZX384C24 ,BZX384C27, BZX384C30, BZX384C33, BZX384C36, BZX384C39, BZX384C43, BZX384C47, BZX384C51, BZX384C56, BZX384C62, BZX384C68, BZX384C75
TAG Diodes, Zener

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DESCRIPTION
Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass package.

FEATURES
*Temperature compensated
*Reference voltage range: 5.89 to 6.51 V (typ. 6.20 V)
*Low temperature coefficient range: max. 0.0005 to 0.01 %/K.

APPLICATION
*Voltage reference sources in measuring instruments such as digital voltmeters.

1N829
1N821A
1N829A
TAG Diodes

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Device Description
A range of silicon varactor diodes for use in frequency control and filtering.
Featuring closely controlled CV characteristics and high Q.
Low reverse current ensures very low phase noise performance.
Available in single or dual common cathode format in a wide rage of miniature surface mount packages.

Features
* Close tolerance C-V characteristics
* Octave tuning from 0 to 6V
* Low IR (typically 200pA)
* Excellent phase noise performance
* High Q

Applications
* VCXO and TCXO
* Wireless communications
* Pagers
* Mobile radio

ZMV930
ZC930TA
ZC931TA

TAG Diodes

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Features
· Beam-Lead Device
· No Wirebonds Required
· Rugged Silicon-Glass Construction
· Silicon Nitride Passivation
· Polymer Scratch and Impact Protection
· Low Parasitic Capacitance and Inductance
· Ultra Low Capacitance < 40 fF
· Excellent RC Product < 0.10 pS
· High Switching Cutoff Frequency > 110 GHz
· 110 Nanosecond Minority Carrier Lifetime
· Driven by Standard +5V TTL PIN Diode Driver

Description and Applications
 This device is a Silicon-Glass Beam-Lead PIN diode fabricated with M/A-COM’s patented HMICTM process. This device features one silicon pedestal embedded in a low loss, low dispersion glass which supports the beam-leads. The diode is formed on the top of the
pedestal, and airbridges connect the diode to the beam-leads. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection.

 These protective coatings prevent damage to the junction and the air-bridges during handling and assembly. The diodes themselves exhibit low series resistance, low capacitance, and extremely fast switching speed.

 The ultra low capacitance of this device allows use through W-band (110 GHz) applications. The low RC product and low profile of the PIN diodes makes it ideal for use in microwave and millimeter wave switch designs, where lower insertion loss and higher isolation are required. The + 10 mA ( low loss state ) and the 0v ( isolation state ) bias of the diodes allows the use a simple + 5V TTL gate driver. These diodes are used as switching arrays on radar systems, high-speed ECM circuits, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies.

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Features
* Tight Parameter Distribution
* Available as Singles and Pairs
* 100% DC Tested
* Designed for High Volume Commercial

Applications
* Available in Tape and Reel Packaging

Description
 These low cost, surface mountable plastic packaged silicon mixer Schottky diodes are designed for RF and microwave mixers and detectors.They include low barrier diodes and zero
bias detectors, combining Alpha’s advanced semiconductor technology with low cost packaging techniques.
 All diodes are 100% DC tested and deliver tight parameter distribution, minimizing performance variability.They are available in SC- 70, SC-79, SOD-323, SOT-23 and SOT-143 packages.Wiring configurations include singles, common cathode, series pairs and unconnected pairs. Applications include low noise receivers used in high sensitivity ID tags, wireless systems, radio designs and may be used at frequencies to 10 GHz. SPICE model parameters are included as a design tool.

SMS7630-079 SMS1546-011 SMS7621-011 SMS7630-011 SMS1546-001
SMS7621-001 SMS7630-001 SMS1546-005 SMS7621-005 SMS7630-005

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General description
General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package.

Features
* Non-repetitive peak reverse power dissipation: £ 40 W
* Total power dissipation: £ 550 mW
* Two tolerance series: ±2 % and ±5 %
* Wide working voltage range: nominal 2.4 V to 75 V (E24 range)
* Low differential resistance
* Small plastic package suitable for surface-mounted design

Applications
* General regulation functions

BZX84J-B2V4 BZX84J-B2V7 BZX84J-B3V0 BZX84J-B3V3 BZX84J-B3V6 BZX84J-B3V9
BZX84J-B4V3 BZX84J-B4V7 BZX84J-B5V1 BZX84J-B5V6 BZX84J-B6V2 BZX84J-B6V8
BZX84J-B7V5 BZX84J-B8V2 BZX84J-B9V1 BZX84J-B10 BZX84J-B11 BZX84J-B12
BZX84J-B13 BZX84J-B15 BZX84J-B16 BZX84J-B18 BZX84J-B20 BZX84J-B22 BZX84J-B24
BZX84J-B27 BZX84J-B30 BZX84J-B33 BZX84J-B36 BZX84J-B39 BZX84J-B43 BZX84J-B47
BZX84J-B51 BZX84J-B56 BZX84J-B62 BZX84J-B68 BZX84J-B75 BZX84J-C2V4 BZX84J-C2V7
BZX84J-C3V0 BZX84J-C3V3 BZX84J-C3V6 BZX84J-C3V9 BZX84J-C4V3 BZX84J-C4V7
BZX84J-C5V1 BZX84J-C5V6 BZX84J-C6V2 BZX84J-C6V8 BZX84J-C7V5 BZX84J-C8V2
BZX84J-C9V1 BZX84J-C10 BZX84J-C11 BZX84J-C12 BZX84J-C13
TAG Diodes

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DESCRIPTION
The popular 1N746 thru 1N759A and 1N4370 thru 1N4372A series of 0.5 watt Zener Voltage Regulators provides a selection from 2.4 to 12 volts in standard 5% or 10% tolerances as well as tighter tolerances identified by different suffix letters on the part number. These glass axial-leaded DO-35 Zeners are also available with an internal-metallurgical-bond option by adding a “-1” suffix. These are also available in JAN, JANTX, and JANTXV military qualifications. Microsemi also offers numerous other Zener products to meet higher and lower power applications.

FEATURES
• JEDEC registered 1N746 thru 1N759A and 1N4370 thru 1N4372A series
• Internal metallurgical bond option available by adding a “-1” suffix
• Also available in JAN, JANTX, and JANTXV qualifications per MIL-PRF-19500/127 by adding the JAN, JANTX, or JANTXV prefixes to part numbers for desired level of screening as well as –1” suffix; (e.g. JANTX1N751A-1, JANTXV1N758C-1, etc.)
• Military Surface Mount equivalents also available in DO-213AA by adding a UR-1 suffix in addition to the JAN, JANTX, and JANTXV prefix; e.g. JANTX1N962BUR-1 (see separate data sheet)
• Commercial Surface Mount equivalents available as MLL746 to MLL759A and MLL4370 to MLL4372A including the “-1” suffix in the DO-213AA MELF style package (consult factory for others)
• DO-7 glass body axial-leaded Zener equivalents are also available

APPLICATIONS / BENEFITS
• Regulates voltage over a broad operating current and temperature range
• Selection from 2.4 to 12 V
• Standard voltage tolerances are plus/minus 5% with A suffix identification and 10 % with no suffix
• Tight tolerances available in plus or minus 2% or 1% with C or D suffix respectively
• Flexible axial-lead mounting terminals
• Nonsensitive to ESD per MIL-STD-750 Method 1020
• Minimal capacitance (see Figure 3)
• Inherently radiation hard as described in Microsemi MicroNote 050

MAXIMUM RATINGS
• Operating and Storage temperature: -65ºC to +175ºC
• Thermal Resistance: 250 ºC/W junction to lead at 3/8 (10 mm) lead length from body, or 310ºC/W junction to ambient when mounted on FR4 PC board (1 oz Cu) with 4 mm2 copper pads and track width 1 mm, length 25 mm
• Steady-State Power: 0.5 watts at TL < 50oC 3/8 inch (10 mm) from body or 0.48 W at TA < 25ºC when mounted on FR4 PC board as described for thermal resistance above (also see Figure1)
• Forward voltage @200 mA: 1.1 volts
• Solder Temperatures: 260 ºC for 10 s (max)

MECHANICAL AND PACKAGING
• CASE: Hermetically sealed axial-lead glass DO-35 (DO-204AH) package
• TERMINALS: Leads, tin-lead plated solderable per MIL-STD-750, method 2026
• POLARITY: Cathode indicated by band. Diode to be operated with the banded end positive with respect to the opposite end for Zener regulation
• MARKING: Part number
• TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number)
• WEIGHT: 0.2 grams
• See package dimensions on last page

1N4370 1N4371 1N4372 1N746 1N747 1N748 1N749 1N750 1N751 1N752 1N753 1N754 1N755
1N756 1N757 1N758 1N759

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DESCRIPTION
The popular 1N4565 thru 1N4584A-1 series of Zero-TC Reference Diodes provides a selection of both 6.4 V nominal voltages and temperature coefficients to as low as 0.0005%/oC for minimal voltage change with temperature. Four different operating currents are available for selection at 0.5 mA, 1.0 mA, 2.00 mA, and 4.00 mA. These glass axial-leaded DO-7 reference diodes are internal-metallurgical-bonded and are also available in JAN, JANTX, and JANTXV military qualifications. Microsemi also offers numerous other Zener Reference Diode products for a variety of other voltages up to 200 V.

FEATURES
• JEDEC registered 1N4565 thru 1N4584 series .
• Reference voltage diodes of nominal 6.4 V +/- 5% with tighter tolerance options available
• Temperature Coefficient range: 0.01%/oC to 0.0005%/oC.
• Zener Test Current selection range: 0.500 mA, 1.00 mA, 2.00 mA and 4.00 mA.
• Internal metallurgical bonded
• 1N4565 thru 1N4584 also have qualification to MILPRF- 19500/452 by adding the JAN, JANTX,
JANTXV, or JANS prefixes to part numbers a well as the “-1” suffix; e.g. JANTX1N4574A-1, etc.
• Military surface mount equivalents also available in DO-213AA by adding UR-1 suffix and the JAN, JANTX, and JANTXV prefix, e.g. JANTX1N4569AUR-1 (see separate data sheet)
• Also available in DO-35 package including military qualifications up to JANTXV (see separate data sheet)

APPLICATIONS / BENEFITS
• Provides minimal voltage change over a broad operating temperature range for instrumentation and other circuit designs requiring a voltage reference
• Temperature coefficient selections available from 0.01%/ºC to 0.0005%/ºC
• Tight reference voltage tolerances available with nominal value of 6.4 V by adding tolerance 1%, 2%, 3%, etc. after the part number for identification, e.g. 1N4569-2%, 1N4579A-1%, 1N4574A-1-1%, etc.
• Flexible axial-leaded mounting terminals
• Nonsensitive to ESD per MIL-STD-750 Method 1020

MAXIMUM RATINGS
• Operating Temperatures: -65oC to +175oC
• Storage Temperatures: -65oC to +175oC
• DC Power Dissipation: 500 mW @ TL = 25oC with
maximum current IZM 70 mA. NOTE: For optimum
voltage-temperature stability, the operating test
current (IZT) should be as specified in the Electrical
Characteristics Table (power less than 30 mW)
• Solder Temperatures: 260oC for 10 s (max).

MECHANICAL AND PACKAGING
• CASE: Hermetically sealed glass case. DO-7 (DO-204AA) package
• TERMINALS: Leads, tin-lead plated solderable per MIL-STD-750, Method 2026
• MARKING: Part number and cathode band
• POLARITY: Reference diode to be operated with the banded end positive with respect to the opposite end
• TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number)
• WEIGHT: 0.2 grams.
• See package dimensions on last page

1N4565 1N4565A 1N4566 1N4566A  1N4567 1N4567A 1N4568 1N4568A 1N4569 1N4569A 1N4570
1N4570A 1N4571 1N4571A 1N4572 1N4572A 1N4573 1N4573A 1N4574 1N4574A 1N4575 1N4575A
1N4576 1N4576A 1N4577 1N4577A 1N4578 1N4578A 1N4579 1N4579A 1N4580 1N4580A 1N4581
1N4581A 1N4582 1N4582A 1N4583 1N4583A 1N4584 1N4584A

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