General Description
The MM74HC125 and MM74HC126 are general purpose 3-STATE high speed non-inverting buffers utilizing advanced silicon-gate CMOS technology. They have high drive current outputs which enable high speed operation even when driving large bus capacitances. These circuits
possess the low power dissipation of CMOS circuitry, yet have speeds comparable to low power Schottky TTL circuits. Both circuits are capable of driving up to 15 low power Schottky inputs. The MM74HC125 require the 3-STATE control input C to be taken high to put the output into the high impedance condition, whereas the MM74HC126 require the control input to be low to put the output into high impedance. All inputs are protected from damage due to static discharge by diodes to VCC and ground.

Features
·  Typical propagation delay: 13 ns
·  Wide operating voltage range: 2–6V
·  Low input current: 1 mA maximum
·  Low quiescent current: 80 mA maximum (74HC)
·  Fanout of 15 LS-TTL loads

MM74HC126 MM74HC125SJ MM74HC125MTC
TAG Buffer, CMOS

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GENERAL DESCRIPTION
The Am29LV640DU/Am29LV641DU is a 64 Mbit, 3.0 Volt (3.0 V to 3.6 V) single power supply flash memory devices organized as 4,194,304 words. Data appears on DQ0-DQ15. The device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed in standard EPROM programmers.
Access times of 90 and 120 ns are available for applications where VIO ≥ VCC. Access times of 100 and 120 ns are available for applications where VIO < VCC. The device is offered in 48-pin TSOP, 56-pin SSOP, 63-ball Fine-Pitch BGA and 64-ball Fortified BGA packages. To eliminate bus contention each device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.
Each device requires only a single 3.0 Volt power supply (3.0 V to 3.6 V) for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.
The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timing. Register contents serve as inputs to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations Reading data out of the device is similar to reading from other Flash or EPROM devices.
Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm-an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four.
Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm-an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin.

FEATURE
? Single power supply operation
? VersatileI control
? High performance
? Manufactured on 0.23 µm process technology
? CFI (Common Flash Interface) compliant
? SecSi (Secured Silicon) Sector region
? Ultra low power consumption (typical values at 3.0 V, 5 MHz)
? Flexible sector architecture
? Sector Protection
? Embedded Algorithms
? Compatibility with JEDEC standards
? Minimum 1 million erase cycle guarantee per sector
? Erase Suspend/Erase Resume
? Data# Polling and toggle bits
? Unlock Bypass Program command
? Ready/Busy# pin (RY/BY#) (Am29LV640DU in FBGA package only)
? Hardware reset pin (RESET#)
? WP# pin (Am29LV641DH/DL in TSOP, Am29LV640DH/DL in SSOP only)
? Program and Erase Performance (VHH not applied to the ACC input pin)

AM29LV640D, AM29LV641D, AM29LV640DH90R, AM29LV641DH90R, AM29LV640DL90R, AM29LV641DL90R, AM29LV640DU90R, AM29LV641DU90R, AM29LV640DH101R, AM29LV641DH101R, AM29LV640DL101R, AM29LV641DL101R, AM29LV640DU101R, AM29LV641DU101R, AM29LV640DH120R, AM29LV641DH120R, AM29LV640DL120R, AM29LV641DL120R, AM29LV640DU120R, AM29LV641DU120R, AM29LV640DH121R, AM29LV641DH121R, AM29LV640DL121R, AM29LV641DL121R, AM29LV640DU121R, AM29LV641DU121R

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GENERAL DESCRIPTION
The Am29DL322D/323D/324D family consists of 32 megabit, 3.0 volt-only flash memory devices, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on DQ0–DQ15; byte mode data appears on DQ0–DQ7.
The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers.
The devices are available with an access time of 70, 90 or 120 ns. The devices are offered in 48-pin TSOP and 63-ball FBGA packages. Standard control pins—chip enable (CE#), write enable (WE#), and output enable (OE#)—control normal read and write operations, and avoid bus contention issues.
The devices requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.

HARDWARE FEATURES
■ Any combination of sectors can be erased
■ Ready/Busy# output (RY/BY#)
 - Hardware method for detecting program or erase cycle completion
■ Hardware reset pin (RESET#)
  - Hardware method of resetting the internal state machine to the read mode
■ WP#/ACC input pin
  - Write protect (WP#) function allows protection of two outermost boot sectors, regardless of sector protect status
  - Acceleration (ACC) function accelerates program timing
■ Sector protection
  - Hardware method of locking a sector, either in-system or using programming equipment, to
prevent any program or erase operation within that sector
  - Temporary Sector Unprotect allows changing data in protected sectors in-system

AM29DL322DT70, AM29DL323DT70, AM29DL324DT70, AM29DL322DB70, AM29DL323DB70, AM29DL324DB70, AM29DL322DT90, AM29DL323DT90, AM29DL324DT90, AM29DL322DB90, AM29DL323DB90, AM29DL324DB90, AM29DL322DT120, AM29DL323DT120, AM29DL324DT120, AM29DL322DB120, AM29DL323DB120, AM29DL324DB120
TAG CMOS, Memory

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ICL7208 - CMOS

Looking for 2006/05/06 11:45
If you can to find, please send me
I hope you help me.
TAG CMOS

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