DESCRIPTION
MB85RS256 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85RS256 adopts the Serial Peripheral Interface (SPI).
The MB85RS256 is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS256 can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RS256 does not take long time to write data unlike Flash memories nor E2PROM, and MB85RS256 takes no wait time.

FEATURES
*Bit configuration : 32,768 words × 8 bits
*Operating power supply voltage : 3.0 V to 3.6 V
*Operating frequency : 15 MHz (Max)
*Serial Peripheral Interface : SPI (Serial Peripheral Interface) Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
*Operating temperature range : −20 °C to +85 °C
*Data retention : 10 years (+55 °C)
*High endurance : 10 Billion Read/writes
*Package : 8-pin plastic SOP (FPT-8P-M02)

MB85RS256PNF-G-JNE1, MB85RS256PNF-G-JN-ERE1
TAG CMOS, FRAM, Memory, SPI

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DESCRIPTION
The OPA2335 CMOS operational amplifier uses auto-zeroing techniques to simultaneously provide very low offset voltage (5 mV max), and near-zero drift over time and temperature. This high-precision, low quiescent current amplifier offers high input impedance and rail-to-rail output swing. Single or dual supplies as low as 2.7 V (±1.35 V) and up to 5.5 V (±2.75 V) may be used. This op amp is optimized for low-voltage, single-supply operation.
The OPA2335 is available in a CDIP-8 package and is specified for operation from –55°C to 125°C.

FEATURES
*Low Offset Voltage: 5 mV (max)
*Zero Drift: 0.02 mV/°C (typ)
*Quiescent Current: 570 mA
*Single-Supply Operation
*Ceramic DIP Package

APPLICATIONS
*Transducer Applications
*Temperature Measurement
*Electronic Scales
*Medical Instrumentation
*Battery-Powered Instruments
*Handheld Test Equipment

OPA2335AMJG, OPA2335

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General Description
The AME8819 is a CMOS linear regulator. It operated from 2.5V to 5.5V input voltage and delivers up to 600mA output current. The AME8819 provide low quiescent current (70uA typ) low dropout voltage (Vout=3.3V, 540mV @ 600mA typ), and excellent PSRR, thus marking them ideal for Data-Communications and battery applications.
The AME8819 provide over temperature and over current protected functions. It is stable with an output capacitance of 2.2uF or larger.

Features
*Input voltage range is from 2.8V to 5.5V
*Output voltage range is from 1.8V to 4.5V
*Low Dropout: 540mV @ 600mA, VOUT = 3.3V
*Guaranteed 600mA Drive Current
*Factory Pre-set output voltage
*Only 2.2mF Output Capacitor Required for Stability (Low ESR MLCC is allowable)
*Provided OTP, current limit
*All AME’s Green Products Meet RoHS Standards

Applications
*Data-Communication
*Laptop, Palmtops, Notebook computers
*Battery Power Equipment
*Handheld Device
*PCMCIA Cards

AME8819AEFT180Z, AME8819AEFT250Z, AME8819AEFT300Z

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DESCRIPTION
The CAT6218 is a 300mA CMOS low dropout regulator that provides fast response time during load current and line voltage changes.
The quick-start feature allows the use of an external bypass capacitor to reduce the overall output noise without affecting the turn-on time of just 150μs.
With zero shutdown current and low ground current of 55μA typical, the CAT6218 is ideal for batteryoperated devices with supply voltages from 2.3V to 5.5V. An internal under voltage lockout circuit disables the output at supply voltages under 2.1V typical.
The CAT6218 offers 1% initial accuracy and low dropout voltage, 180mV typical at 300mA. Stable operation is provided with a small value ceramic capacitor, reducing required board space and compo–nent cost.
Other features include fold-back current current limit and thermal protection.
The device is available in the low profile (1mm max height) 5-lead thin SOT23 package.

FEATURES
*Guaranteed 300mA output current
*Low dropout voltage of 180mV typical at 300mA
*Stable with 1μF ceramic output capacitor
*External 10nF bypass capacitor for low noise
*Quick-start feature
*No-load ground current of 55μA typical
*Full-load ground current of 80μA typical
*±1.0% output voltage initial accuracy
*±2.0% accuracy over temperature
*“Zero” current shutdown mode
*Fold-back current limit and under-voltage lockout
*Thermal protection
*Thin SOT23-5 package

APPLICATIONS
*Cellular phones
*Battery-powered devices
*Consumer Electronics

CAT6218-180TD-GT3, CAT6218-240TD-GT3, CAT6218-270TD-GT3

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DESCRIPTION
The DG300A_MIL/DG301A_MIL/DG302A_MIL monolithic CMOS switches feature three switch configuration options (SPST, SPDT, and DPST) for precision applications in communications, instrumentation and process control, where low leakage switching combined with low power consumption are required.
Designed on the Vishay Siliconix PLUS-40 CMOS process, these switches are latch-up proof, and are designed to block up to 30 V peak-to-peak when off. An epitaxial layer prevents latchup.
In the on condition the switches conduct equally well in both directions (with no offset voltage) and minimize error conditions with their low on-resistance.
Featuring low power consumption (3.5 mW typ) these switches are ideal for battery powered applications, without sacrificing switching speed. Designed for break-before-make switching action, these devices are CMOS and quasi TTL compatible. Single supply operation is allowed by connecting the V- rail to 0 V.

FEATURES
*Analog Signal Range: ±15 V
*Fast Switching—tON: 150 ns
*Low On-Resistance—rDS(on): 30Ω
*Single Supply Operation
*Latch-up Proof
*CMOS Compatible

APPLICATIONS
*Low Level Switching Circuits
*Programmable Gain Amplifiers
*Portable and Battery Powered Systems

DG301A_MIL, DG302A_MIL

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Description
The TSV621 is a single operational amplifier offering low voltage, low power operation and railto-rail input and output.
With a very low input bias current and low offset voltage (800 μV maximum for the A version), the TSV621 is ideal for applications that require precision. The device can operate at a power supply ranging from 1.5 to 5.5 V, and therefore suits battery-powered devices and extends battery life.
This product features an excellent speed/power consumption ratio, offering a 420 kHz gain bandwidth while consuming only 29 μA at a 5-V supply voltage.
This operational amplifier is unity gain stable for capacitive loads up to 100 pF.
The device is internally adjusted to provide very narrow dispersion of AC and DC parameters, especially power consumption, product gain bandwidth and slew rate.
The TSV621 presents a high tolerance to ESD, sustaining 4 kV for the human body model.
Additionally, the TSV621 is offered in SC70-5 and SOT23-5 micropackages, with extended temperature ranges from -40° C to +125° C.
All these features make the TSV621 ideal for sensor interfaces, battery-supplied and portable applications, as well as active filtering.

Features
*Low supply voltage: 1.5 V–5.5 V
*Rail-to-rail input and output
*Low input offset voltage: 800 μV max (A version)
*Low power consumption: 29 μA typ
*Gain bandwidth product: 420 kHz typ
*Unity gain stability
*Micropackages: SC70-5, SOT23-5
*Low input bias current: 1 pA typ
*Extended temperature range: -40 to +125° C
*4 kV HBM

Applications
*Battery-powered applications
*Portable devices
*Signal conditioning
*Active filtering
*Medical instrumentation

TSV621ILT, TSV621ICT

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GENERAL DESCRIPTION
The SAA7345 incorporates the CD signal processing functions of decoding and digital filtering. The device is equipped with on-board SRAM and includes additional features to reduce the processing required in the analog domain.
Supply of this Compact Disc IC does not convey an implied license under any patent right to use this IC in any Compact Disc application.

FEATURES
*Integrated data slicer and clock regenerator
*Digital Phase-Locked Loop (PLL)
*Demodulator and Eight-to-Fourteen Modulation (EFM) decoding
*Subcoding microcontroller serial interface
*Integrated programmable motor speed control
*Error correction and concealment functions
*Embedded Static Random Access Memory (SRAM) for de-interleave and First-In First-Out (FIFO)
*FIFO overflow concealment for rotational shock resistance
*Digital audio interface [European Broadcasting Union (EBU)]
*2 to 4 times oversampling integrated digital filter
*Audio data peak level detection
*Versatile audio data serial interface
*Digital de-emphasis filter
*Kill interface for Digital-to-Analog Converter (DAC) deactivation during digital silence
*Double speed mode
*Compact Disc Read Only Memory (CD-ROM) modes
*A single speed only version is available (SAA7345GP/SS).

SAA7345GP

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Description
The Microchip Technology Inc. 24AA128/24LC128/24FC128 (24XX128*) is a 16K x 8 (128 Kbit) Serial Electrically Erasable PROM (EEPROM), capable of operation across a broad voltage range (1.7V to 5.5V). It has been developed for advanced, low-power applications such as personal communications or data acquisition. This device also has a page write capability of up to 64 bytes of data. This device is capable of both random and sequential reads up to the 128K boundary. Functional address lines allow up to eight devices on the same bus, for up to 1 Mbit address space. This device is available in the standard 8-pin plastic DIP, SOIC (3.90 mm and 5.28 mm), TSSOP, MSOP, DFN, and Chip Scale packages.

Features
*Single Supply with Operation down to 1.7V for 24AA128/24FC128 devices, 2.5V for 24LC128 devices
*Low-Power CMOS Technology:
-Write current 3 mA, typical
-Standby current 100 nA, typical
*2-Wire Serial Interface, I2C™ Compatible
*Cascadable up to Eight Devices
*Schmitt Trigger Inputs for Noise Suppression
*Output Slope Control to Eliminate Ground Bounce
*100 kHz and 400 kHz Clock Compatibility
*1 MHz Clock for FC Versions
*Page Write Time 5 ms, typical
*Self-Timed Erase/Write Cycle
*64-Byte Page Write Buffer <adjust per device>
*Hardware Write-Protect
*ESD Protection >4000V
*More than 1 Million Erase/Write Cycles
*Data Retention > 200 years
*Factory Programming Available
*Packages include 8-lead PDIP, SOIC, TSSOP, DFN, MSOP, and Chip Scale Packages
*Pb-Free and RoHS Compliant
*Temperature Ranges:
- Industrial (I): -40°C to +85°C
- Automotive (E): -40°C to +125°C

24AA128, 24AA128T, 24LC128, 24LC128T, 24FC128, 24FC128T
TAG CMOS, EEPROM

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DESCRIPTION
Maxwell Technologies’ 6484 provides a common-mode range that extends to both supply rails. This rail-to-rail performance combined with excellent accuracy, due to a high CMRR<makes it unique among rail-to-rail input amplifiers. It is ideal for systems, such as data acquisition, that require a large input signal range.
Maximum dynamic signal range is assured in low voltage and single supply systems by the 6484’s rail-to-rail output swing. The device’s rail-to-rail output swing is guaranteed for loads down to 600Ω. Guaranteed low voltage characteristics and low power dissipation make the 6484 especially well-suited for battery-operated systems.
Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up toMaxwell Technologies self-defined Class K.

FEATURES
*Rad-Pak® technology-hardened against natural space radiation
*Total dose hardness
-100 krad (Si), depending upon orbit and space mission
*Package
*- 14 pin Rad-Pak® flat package
*Rail-to-Rail input common-mode voltage range (guaranteed over temperature
*Rail-to-Rail output swing (within 20 mV of supply rail, 100 kΩ load)
*Guaranteed 3V, 5V and 15V performance
*Excellent CMRR and PSRR: 82 dB
*Ultra low input current: 20 pA
*High voltage gain (RL = 500 kΩ): 130 dB
*Specified for 2 kΩ and 600 Ω loads

6484RPFH, 6484RPFI, 6484RPFE, 6484

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DESCRIPTION
The HY62U8400A is a high-speed, low power and 4M bits CMOS SRAM organized as 512K words by 8 bits. The HY62U8400A uses Hynix's high performance twin tub CMOS process technology and was designed for high-speed and low power circuit technology. It is particularly well suited for use in high-density and low power system applications. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0V.

FEATURES
*Fully static operation and Tri-state outputs
*TTL compatible inputs and outputs
*Low power consumption
*Battery backup(LL-part)
-2.0V(min) data retention
*Standard pin configuration
-32pin 525mil SOP
-32pin 400mil TSOP-II (Standard and Reversed)

HY62U8400A, HY62U8400A-E, HY62U8400A-I
TAG CMOS, SRAM

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