DESCRIPTION
The PA12 is a state of the art high voltage, very high output current operational amplifier designed to drive resistive, inductive and capacitive loads. For optimum linearity, especially at low levels, the output stage is biased for class A/B operation using a thermistor compensated base-emitter voltage multiplier circuit. The safe operating area (SOA) can be observed for all operating conditions by selection of user programmable current limiting resistors. For continuous operation under load, a heatsink of proper rating is recommended. The PA12 is not recommended for gains below –3 (inverting) or +4 (non-inverting).
This hybrid integrated circuit utilizes thick film (cermet) resistors, ceramic capacitors and semiconductor chips to maximize reliability, minimize size and give top performance. Ultrasonically bonded aluminum wires provide reliable interconnections at all operating temperatures. The 8-pin TO-3 package is hermetically sealed and electrically isolated. The use of compressible isolation washers voids the warranty.

FEATURES
*LOW THERMAL RESISTANCE — 1.4°C/W
*CURRENT FOLDOVER PROTECTION — NEW
*HIGH TEMPERATURE VERSION — PA12H
*EXCELLENT LINEARITY — Class A/B Output
*WIDE SUPPLY RANGE — ±10V to ±50V
*HIGH OUTPUT CURRENT — Up to ±15A Peak

APPLICATIONS
*MOTOR, VALVE AND ACTUATOR CONTROL
*MAGNETIC DEFLECTION CIRCUITS UP TO 10A
*POWER TRANSDUCERS UP TO 100kHz
*TEMPERATURE CONTROL UP TO 360W
*PROGRAMMABLE POWER SUPPLIES UP TO 90V
*AUDIO AMPLIFIERS UP TO 120W RMS

PA12A

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GENERAL DESCRIPTION
The ALD2726E/ALD2726 is a dual monolithic rail-to-rail precision CMOS operational amplifier with integrated user programmable EPAD (Electrically Programmable Analog Device) based offset voltage adjustment. The ALD2726E/ALD2726 is a dual version of the ALD1726E/ALD1726 operational amplifier. Each ALD2726E/ALD2726 operational amplifier features individual, user-programmable offset voltage trimming resulting in significantly enhanced total system performance and user flexibility. EPAD technology is an exclusive ALD design which has been refined for analog applications where precision voltage trimming is necessary to achieve a desired performance. It utilizes CMOS FETs as in-circuit elements for trimming of offset voltage bias characteristics with the aid of a personal computer under software control. Once programmed, the set parameters are stored indefinitely. EPAD offers the circuit designer a convenient and cost-effective trimming solution for achieving the very highest amplifier/system performance.
The ALD2726E/ALD2726 dual operational amplifier features rail-to-rail input and output voltage ranges, tolerance to overvoltage input spikes of 300mV beyond supply rails, capacitive loading up to 25pF, extremely low input currents of 0.01pA typical, high open loop voltage gain, useful bandwidth of 700KHz, slew rate of 0.7V/ms, and low typical supply current of 50mA for both amplifiers.

KEY FEATURES
*EPAD ( Electrically Programmable Analog Device)
*User programmable VOS trimmer
*Computer-assisted trimming
*Rail-to-rail input/output
*Compatible with standard EPAD Programmer
*Each amplifier VOS can be trimmed to a different Vos level
*High precision through in-system circuit trimming
*Reduces or eliminates VOS, PSRR, CMRR and TCVOS errors
*System level “calibration” capability
*Application Specific Programming mode
*In-System Programming mode
*Electrically programmable to compensate for external component tolerances
*0.01pA input bias current and 35mV input offset voltage
*±1V to ±5V operation

APPLICATIONS
*Sensor interface circuits
*Transducer biasing circuits
*Capacitive and charge integration circuits
*Biochemical probe interface
*Signal conditioning
*Portable instruments
*High source impedance electrode amplifiers
*Precision Sample and Hold amplifiers
*Precision current to voltage converter
*Error correction circuits
*Sensor compensation circuits
*Precision gain amplifiers
*Periodic In-system calibration
*System output level shifter

ALD2726E, ALD2726EDB, ALD2726ESB, ALD2726EPB, ALD2726DB, ALD2726SB

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General Description
The kB2338A is a high efficiency, 3W mono class-D audio power amplifier. A low noise, filterless PWM architecture eliminates the output filter, reducing external component count, system cost, and simplifying design.
Operating in a single 5V supply, kB2338A is capable of driving 4Ω speaker load at a continuous average output of 3W/10% THD+N or 2W/1% THD+N. The kB2338A has high efficiency with speaker load compared to a typical class AB amplifier. With a 3.6V supply driving an 8Ω speaker , the efficiency for a 400mW power level is 88%. In cellular handsets, the earpiece, speaker phone, and melody ringer can each be driven by the kB2338A. The gain of kB2338A is externally configurable which allows independent gain control from multiple sources by summing signals from seperate sources.
The kB2338A is available in space-saving WCSP and DFN packages.

Features
*Unique Modulation Scheme Reduces EMI Emissions
*Efficiency at 3.6V With an 8-Ω Speaker:
-88% at 400 mW
-80% at 100 mW
*Low 2.38-mA Quiescent Current and 0.5-μA Shutdown Current
*2.5V to 6.0V Wide Supply Voltage
*Optimized PWM Output Stage Eliminates LC Output Filter
*Improved PSRR (-72 dB) Eliminates Need for a Voltage Regulator
*Fully Differential Design Reduces RF Rectification and Eliminates Bypass Capacitor
*Improved CMRR Eliminates Two Input Coupling Capacitors
*Internally Generated 250-kHz Switching Frequency
*Integrated Pop and Click Suppression Circuitry
*1.5mm x 1.5mm Wafer Chip Scale Package (WCSP) and 3mm x 3mm DFN-8 package
*RoHS compliant and 100% lead(Pb)-free

Applications
*Cellular Phone
*Portable Electronic Devices
*PDAs and Smart Phones
*Portable Computer

KBA2338-WCSP

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DESCRIPTION
The TPA6141A2 (also known as TPA6141) is a Class-G DirectPath™ stereo headphone amplifier with selectable gain. Class-G technology maximizes battery life by adjusting the voltage supplies of the headphone amplifier based on the audio signal level. At low level audio signals, the internal supply voltage is reduced to minimize power dissipation. DirectPathTM technology eliminates external DC-blocking capacitors.
The device operates from a 2.5 V to 5.5 V supply voltage. Class-G operation keeps total supply current below 5.0 mA while delivering 500 mW per channel into 32 Ω. Shutdown mode reduces the supply current to less than 3 mA and is activated through the EN pin.
The device has built-in pop suppression circuitry to completely eliminate disturbing pop noise during turn-on and turn-off. The amplifier outputs have short-circuit and thermal-overload protection along with ±8 kV HBM ESD protection, simplifying end equipment compliance to the IEC 61000-4-2 ESD standard.
The TPA6141A2 (TPA6141) is available in a 0,4 mm pitch, 16-bump 1,6 mm × 1,6 mm WCSP (YFF) package.

FEATURES
*TI Class-G Technology Significantly Prolongs Battery Life and Music Playback Time
–0.6 mA / Ch Quiescent Current
–50% to 80% Lower Quiescent Current Than Ground-Referenced Class-AB Headphone Amplifiers
*DirectPathTM Technology Eliminates Large Output DC-Blocking Capacitors
–Outputs Biased at 0 V
–Improves Low Frequency Audio Fidelity
*Active Click and Pop Suppression
*Fully Differential Inputs Reduce System Noise
–Also Configurable as Single-Ended Inputs
*SGND Pin Eliminates Ground Loop Noise
*Wide Power Supply Range: 2.5 V to 5.5 V
*100 dB Power Supply Noise Rejection
*Gain Settings: 0 dB and 6dB
*Short-Circuit Current Limiter
*Thermal-Overload Protection
*±8 kV HBM ESD Protected Outputs
*0,4 mm Pitch, 1,6 mm × 1,6 mm WCSP Package

APPLICATIONS
*Cellular Phones / Music Phones
*Portable Media / MP3 Players
*Portable CD / DVD Players

TPA6141A2YFFR, TPA6141A2YFFT

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PRODUCT DESCRIPTION
The SST12LP10 is a high-performance power amplifier based on the highly-reliable InGaP/GaAs HBT technology.
The SST12LP10 can be easily configured for high-power, high-efficiency applications with superb power-added efficiency while operating over the 2.4~2.5 GHz frequency band. It provides over 26 dB gain with 19% power-added efficiency @ POUT = 20 dBm for 802.11g and 30% poweradded efficiency @ POUT = 24 dBm for 802.11b.
The SST12LP10 has excellent linearity (over 20 dBm linear output with total system EVM<5%) which is essential for 54 Mbps 802.11g operation.
The power amplifier IC also features easy board-level usage along with high-speed power-up/down control and ultra-low reference current (~3 mA). These features coupled with low operating current make the SST12LP10 ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications.
The SST12LP10 is offered in 16-contact VQFN package. See Figure 1 for pin assignments and Table 1 for pin descriptions.

FEATURES
*High Gain:
–>26 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C
*High linear output power:
–~27 dBm P1dB
–Meets 802.11g OFDM ACPR requirement up to 23 dBm
–Over 20 dBm linear output with total system EVM<5% for 54 Mbps 802.11g signal
–Meets 802.11b ACPR requirement up to 24 dBm
*High power-added efficiency/Low operating current for both 802.11g/b applications
–~19% @ POUT = 20 dBm for 802.11g
–~30% @ POUT = 24 dBm for 802.11b
*Ultra-low Reference Current
–~3 mA Total IREF
*Low idle current
–~60 mA ICQ
*High-speed power-up/down
–Turn on/off time (10%~90%) <100 ns
–Typical power-up/down delay with driver delay included <200 ns
*High temperature stability
–~1 dB gain/power variation between 0°C to +80°C
*Low shut-down current (< 0.1 μA)
*Simple input/output matching
*Packages available
–16-contact VQFN (3mm x 3mm)
–Non-Pb (lead-free) packages available

APPLICATIONS:
*WLAN (IEEE 802.11g/b)
*Home RF
*Cordless phones
*2.4 GHz ISM wireless equipment

SST12LP10-QVC, SST12LP10-QVCE, SST12LP10-QVC-K, SST12LP10-QVCE-K

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Product Description
Sirenza Microdevices’ SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.
This product is specifically designed for 802.16 customer premise equipment (CPE) terminals in the 3.3-3.6 GHz bands. It can run from a 3V to 5.2V supply. The external output match and bias adjustability allows load line optimization for other applications covering 3.5-3.8GHz. It features an output power detector, on/off power control and high RF overdrive robustness.
A 20dB step attenuator feature can be utilized by swtiching the second stage Power up/down control. This product features a RoHS compliant and Green package with matte tin finish, designated by the ‘Z’ suffix.

Product Features
*P1dB =35dBm @ 5.2V
*Three Stages of Gain: 35dB
*802.11g 54Mb/s Class AB Performance
*Pout = 27dBm @ 2.5% EVM, Vcc 5.2V,900mA
*Active Bias with Adjustable Current
*On-chip Output Power Detector
*Low Thermal Resistance
*Power up/down control < 1μs
*Attenuator Step 20dB @ Vpc2 = 0V
*Class 1C ESD Rating

Applications
*802.16 WiMAX Driver or Output Stage
*Fixed Wireless, WLL
*CPE Terminal Applications

SZM-3166Z, SZM-3166Z-EVB1

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Product Description
The SPF-5043Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF-5043Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. A high maximum input power specification make it ideal for high dynamic range receivers.

Features
*Ultra-Low Noise Figure=0.8dB @ 900MHz
*Gain=18.2dB @ 900MHz
*High Linearity: OIP3=35dBm @ 1900MHz
*P1dB=21dBm @ 1900MHz
*Single-Supply Operation: 5V @ IDQ=46mA
*Flexible Biasing Options: 3V to 5V, Adjustable Current
*Broadband Internal Matching

Applications
*Cellular, PCS, W-CDMA, ISM, WiMAX Receivers
*Low Noise, High Linearity Gain Block Applications

SPF-5043Z-EVB1

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GENERAL DESCRIPTION
The SSM2319 is a fully integrated, high efficiency Class-D audio amplifier. It is designed to maximize performance for mobile phone applications. The application circuit requires a minimum of external components and operates from a single 2.5 V to 5.5 V supply. It is capable of delivering 3 W of continuous output power with <1% THD + N driving a 3 Ω load from a 5.0 V supply.
The SSM2319 features a high efficiency, low noise modulation scheme that does not require any external LC output filters. The modulation continues to provide high efficiency even at low output power. It operates with 90% efficiency at 1.4 W into 8 Ω or 85% efficiency at 3 W into 3 Ω from a 5.0 V supply and has an SNR of 98 dB. Spread-spectrum pulse density modulation is used to provide lower EMI-radiated emissions compared with other Class-D architectures.
SYNC can be activated in the event that end users are concerned about clock intermodulation (beating effect) of several amplifiers in close proximity.
The SSM2319 has a micropower shutdown mode with a typical shutdown current of 20 nA. Shutdown is enabled by applying a logic low to the SD pin.
The device also includes pop-and-click suppression circuitry. This minimizes voltage glitches at the output during turn-on and turn-off, reducing audible noise on activation and deactivation.
The default gain of the SSM2319 is 12 dB, but users can reduce the gain by using a pair of external resistors (see the Gain section).
The SSM2319 is specified over the industrial temperature range of −40°C to +85°C. It has built-in thermal shutdown and output short-circuit protection. It is available in a 9-ball, 1.5 mm × 1.5 mm wafer level chip scale package (WLCSP).

FEATURES
*Filterless Class-D amplifier with ultraefficient spread-spectrum Σ-Δ modulation
*Internal modulator synchronization (SYNC)
*3 W into 3 Ω load and 1.4 W into 8 Ω load at 5.0 V supply with <1% total harmonic distortion (THD)
*90% efficiency at 5.0 V, 1.4 W into 8 Ω speaker
*Signal-to-noise ratio (SNR): 98 dB
*Single-supply operation: 2.5 V to 5.5 V
*Ultralow shutdown current: 20 nA
*Short-circuit and thermal protection with autorecovery
*Available in 9-ball, 1.5 mm × 1.5 mm WLCSP
*Pop-and-click suppression
*Built-in resistors reduce board component count
*Default fixed 12 dB or user-adjustable gain setting

APPLICATIONS
*Mobile phones
*MP3 players
*Portable gaming
*Portable electronics
*Educational toys

SSM2319CBZ-R2, SSM2319CBZ-REEL, SSM2319CBZ-REEL7, EVAL-SSM2319Z

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DESCRIPTION
As a stereo audio speaker which is operating on a single 5V supply, the UTC PA3017 is capable of delivering 2W of output power per channel into 3Ω loads with less than 1% THD+N. Way of two terminals (GAIN0 and GAIN1) can configured and control the amplifier gain. It also provide gain settings of 6 dB, 10 dB, 15.6 dB, and 21.6 dB (inverting). Other features include internal gain control which requires few external components, an active-low shutdown mode input and thermal shutdown protection.

FEATURES
*2W Output power into 3Ω load from 5V supply each channel
*Gain control internally
*Differential input fully
*Depop circuitry
*Shutdown protection thermally

PA3017-N20-R, PA3017-N20-T

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DESCRIPTION
The TAS5352A is a high-performance, integrated stereo digital amplifier power stage designed to drive a 4-Ω bridge-tied load (BTL) at up to 125 W per channel with low harmonic distortion, low integrated noise, and low idle current.
The TAS5352A has a complete protection system integrated on-chip, safeguarding the device against a wide range of fault conditions that could damage the system. These protection features are short-circuit protection, over-current protection, under voltage protection, over temperature protection, and a loss of PWM signal (PWM activity detector).
A power-on-reset (POR) circuit is used to eliminate power-supply sequencing that is required for most power-stage designs.

FEATURES
*Total Power Output (Bridge Tied Load)
-2 × 125 W at 10% THD+N Into 4 Ω
-2 × 100 W at 10% THD+N Into 6 Ω
*Total Power Output (Single Ended)
-4 × 45 W at 10% THD+N Into 3 Ω
-4 × 35 W at 10% THD+N Into 4 Ω
*Total Power Output (Parallel Mode)
-1 × 250 W at 10% THD+N Into 2 Ω
-1 × 195 W at 10% THD+N Into 3 Ω
*>110 dB SNR (A-Weighted With TAS5518 Modulator)
*<0.1% THD+N (1 W, 1 kHz)
*Supports PWM Frame Rates of 192 kHz to 432 kHz
*Resistor-Programmable Current Limit
*Integrated Self-Protection Circuitry, Including:
-Under Voltage Protection
-Overtemperature Warning and Error
-Overload Protection
-Short-Circuit Protection
-PWM Activity Detector
*Standalone Protection Recovery
*Power-On Reset (POR) to Eliminate System Power-Supply Sequencing
*High-Efficiency Power Stage (>90%) With 80-mΩ Output MOSFETs
*Thermally Enhanced 44-Pin HTSSOP Package (DDV)
*Error Reporting, 3.3-V and 5.0-V Compliant
*EMI Compliant When Used With Recommended System Design

APPLICATIONS
*Mini/Micro Audio System
*DVD Receiver
*Home Theater

TAS5352ADDV

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