Description
The TSV630 and TSV631 devices are single operational amplifiers offering low voltage, low power operation and rail-to-rail input and output.
With a very low input bias current and low offset voltage (500 μV maximum for the A version), the TSV630 and TSV631 are ideal for applications that require precision. The devices can operate at power supplies ranging from 1.5 to 5.5 V, and are therefore ideal for battery-powered devices, extending battery life.
These products feature an excellent speed/power consumption ratio, offering a 880 kHz gain bandwidth while consuming only 60 μA at a 5-V supply voltage. These op-amps are unity gain stable for capacitive loads up to 100 pF.
The devices are internally adjusted to provide very narrow dispersion of AC and DC parameters, especially power consumption, product gain bandwidth and slew rate.
The TSV630 provides a shutdown function.
Both the TSV630 and TSV631 have a high tolerance to ESD, sustaining 4 kV for the human body model.
Additionally, they are offered in micropackages, SC70-6 and SOT23-6 for the TSV630 and SC70-5 and SOT23-5 for the TSV631. They are guaranteed for industrial temperature ranges from -40° C to +125° C.
All these features combined make the TSV630 and TSV631 ideal for sensor interfaces, battery-supplied and portable applications, as well as active filtering.

Features
*Low offset voltage: 500 μV max (A version)
*Low power consumption: 60 μA typ at 5 V
*Low supply voltage: 1.5 V - 5.5 V
*Gain bandwidth product: 880 kHz typ
*Unity gain stability
*Low power shutdown mode: 5 nA typ
*High output current: 63 mA at VCC= 5 V
*Low input bias current: 1 pA typ
*Rail-to-rail input and output
*Extended temperature range: -40°C to +125°C

Applications
*Battery-powered applications
*Portable devices
*Signal conditioning
*Active filtering
*Medical instrumentation

TSV630ILT, TSV630ICT, TSV631ILT, TSV631ICT, TSV630AILT, TSV630AICT

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Product Description
RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA-1426Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment. It features an input power detector, on/off power control, ESD protection, excellent overall robustness and a hand reworkable and thermally enhanced SOF-26 package.

Features
*P1dB=29.5dBm @ 2140MHz
*ACP = -65dBc with 17.0dBm Channel Power @ 2140MHz
*Low Thermal Resistance Package
*Power Up/Down Control<1μs
*Robust Class 1C ESD

Applications
*Macro/Micro-Cell Driver Stage
*Pico-Cell Output Stage
*GSM, CDMA, TDSCDMA, WCDMA, IS-95
*Single and Multi-Carrier Applications

SPA-1426Z-EVB1, SPA-1426Z-EVB2, SPA-1426Z-EVB3

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General description
The TFA9812 is a high-efficiency Bridge Tied Load (BTL) stereo Class-D audio amplifier with a digital I2S audio input. It is available in a HVQFN48 package with exposed die paddle. The exposed die paddle technology enhances the thermal and electrical performances of the device.
The TFA9812 features digital sound processing and audio power amplification. It supports I2C control mode and Legacy mode. In Legacy mode I2C involvement is not needed because the key features are controlled by hardware pin connections.
A continuous time output power of 2 ´ 12 W (RL = 8 W, VDDP = 15 V) is supported without an external heat sink. Due to the implementation of a programmable thermal foldback even for high supply voltages, higher ambient temperatures, and/or lower load impedances, the device operates without sound interrupting behavior.
TFA9812 is designed in such a way that it starts up easily (no special power-up sequence required). It features various soft and hard impact protection mechanisms to ensure an application that is both user friendly and robust.
A modulation technique is applied for the TFA9812, which supports common mode choke approach (1 common mode choke only per BTL amplifier stage). This minimizes the number of external components.

Features
*General features
-3.3 V and 8 V to 20 V external power supply
-High efficiency and low power dissipation
-Speaker outputs fully short circuit proof across load, to supply lines and ground
-Pop noise free at power-up/power-down and sample rate switching
-Low power Sleep mode
-Overvoltage and undervoltage protection on the 8 V to 20 V power supply
-Undervoltage protection on the 3.3 V power supply
-Overcurrent protection (no audible interruptions)
-Overdissipation protection
-Thermally protected and programmable thermal foldback
-Clock error protection
-I2C mode control or Legacy mode (i.e. no I2C) control
-Four different I2C addresses supported
-Internal Phase-Locked Loop (PLL) without using external components
-No high system clock required (PLL is able to lock on BCK)
-No external heat sink required
-5 V tolerant digital inputs
-Supports dual coil inductor application
-Easy application and limited external components required
*DSP features
-Digital parametric 10-band equalizer
-Digital volume control per channel
-Selectable +24 dB gain boost
-Analog interface to digital volume control in Legacy mode
-Digital clip level control
-Soft and hard mute
-Thermal foldback threshold temperature control
-De-emphasis
-Output power limiting control
-Polarity switch
-Four Pulse Width Modulation (PWM) switching frequency settings
*Audio data input interface format support
-Master or slave Master Clock (MCLK), Bit Clock (BCK) and Word Select (WS) signals
-Philips I2S, standard I2S
-Japanese I2S, Most Significant Bit (MSB) justified
-Sony I2S, Least Significant Bit (LSB) justified
-Sample rates from 8 kHz to 192 kHz

Applications
*Digital-in Class-D audio amplifier applications
*CRT and flat-panel television sets
*Flat-panel monitors
*Multimedia systems
*Wireless speakers
*Docking stations for MP3 players

TFA9812HN

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DESCRIPTION
The INA321 family is a series of rail-to-rail output, micropower CMOS instrumentation amplifiers that offer wide-range, single-supply, as well as bipolar-supply operation. The INA321 family provides low-cost, low-noise amplification of differential signals with micropower current consumption of 40μA. When shutdown, the INA321 has a quiescent current of less than 1μA. Returning to normal operations within microseconds, the shutdown feature makes the INA321 optimal for low-power battery or multiplexing applications.
Configured internally for 5V/V gain, the INA321 offers exceptional flexibility with user-programmable external gain resistors. The INA321 reduces common-mode error over frequency and with CMRR remaining high up to 3kHz, line noise and line harmonics are rejected.
The low-power design does not compromise on bandwidth or slew rate, making the INA321 ideal for driving sample Analog-to-Digital (A/D) converters as well as general-purpose applications. With high precision, low cost, and small packaging, the INA321 outperforms discrete designs, while offering reliability and performance.

FEATURES
*LOW QUIESCENT CURRENT: 40μA/channel Shut Down: < 1μA
*HIGH GAIN ACCURACY: G = 5, 0.02%, 2ppm/°C
*GAIN SET WITH EXTERNAL RESISTORS
*LOW OFFSET VOLTAGE: ±200μV
*HIGH CMRR: 94dB
*LOW BIAS CURRENT: 10pA
*BANDWIDTH: 500kHz, G = 5V/V
*RAIL-TO-RAIL OUTPUT SWING: (V+) − 0.02V
*WIDE TEMPERATURE RANGE: −55°C to +125°C
*SINGLE VERSION IN MSOP-8 PACKAGE AND DUAL VERSION IN TSSOP-14 PACKAGE

APPLICATIONS
*INDUSTRIAL SENSOR AMPLIFIERS: Bridge, RTD, Thermistor, Position
*PHYSIOLOGICAL AMPLIFIERS: ECG, EEG, EMG
*A/D CONVERTER SIGNAL CONDITIONING
*DIFFERENTIAL LINE RECEIVERS WITH GAIN
*FIELD UTILITY METERS
*PCMCIA CARDS
*COMMUNICATION SYSTEMS
*TEST EQUIPMENT
*AUTOMOTIVE INSTRUMENTATION

INA2321, INA321E, INA321EA, INA2321EA

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PRODUCT DESCRIPTION
The AWT6275 meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4 mm x 4 mm x 1.5 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.

FEATURES
*InGaP HBT Technology
*High Efficiency:
-43% @ POUT = +27.5 dBm
-21% @ POUT = +16 dBm
-15% @ POUT = +7 dBm
*Low Quiescent Current: 16 mA
*Low Leakage Current in Shutdown Mode: <1 μA
*VREF = +2.85 V (+2.75 V min over temp)
*Optimized for a 50 Ω System
*Low Profile Miniature Surface Mount Package Option: 1.1 mm Max
*RoHS Compliant Package, 250 oC MSL-3
*HSDPA Capable

APPLICATIONS
*Dual Band WCDMA Wireless Handsets
*Dual Mode 3GPP Wireless Handsets

AWT6275RM20P8

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Product Description
Sirenza Microdevices’ SUF-6000 is a high gain broadband 2-stage amplifier covering 2-16 GHz for wideband communication and general purpose applications. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5V supply. Its compact size make it ideal for high-density multi-chip module applications.

Product Features
*Broadband Performance
*High Gain = 17.4 dB @ 14 GHz
*P1dB = 12.0 dBm @ 14 GHz
*IP3 = 24.9 dBm @ 14 GHz
*5V Operation, No Dropping Resistor
*Low Gain Variation vs. Temperature
*Patented Thermal Design
*Patented Self-Bias Darlington Circuit

Applications
*Broadband Communications
*Test Instrumentation
*Military & Space
*LO and IF Mixer Applications
*High IP3 RF Driver Applications

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PRODUCT DESCRIPTION
The SST12LP07 is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology.
The SST12LP07 can be easily configured for high-power applications with good power-added efficiency while operating over the 2.4- 2.5 GHz frequency band. This device typically provides 29 dB gain with 22% power-added efficiency @ POUT = 22 dBm for 802.11g and 21% poweradded efficiency @ POUT = 22 dBm for 802.11b.
The SST12LP07 has excellent linearity, typically ~2.5% added EVM at 19 dBm output power which is essential for 54 Mbps 802.11g/n operation while meeting 802.11g spectrum mask at 22 dBm. The SST12LP07 can also be configured for high-efficiency operation, typically 17 dBm linear 54 Mbps 802.11g output power at 85 mA total power consumption. High-efficiency operation is desirable in embedded applications such as in hand-held units.
The SST12LP07 also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. Ultra-low reference current (total IREF ~2 mA) makes the SST12LP07 controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST12LP07 ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications.
The SST12LP07 has an excellent on-chip, single-ended power detector, which features wide-range (~20 dB) with dB-wise linearization and high stability over temperature (<+/-0.3 dB 0°C to +85°C), frequency (<+/-0.3 dB across Channels 1 through 14), and output load (<+/-0.4 dB
with 2:1 output VSWR all phases). The excellent onchip power detector provides a reliable solution to board-level power control.
The SST12LP07 is offered in a 16-contact VQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions.

FEATURES
*High Gain:
-Typically 29 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C
*High linear output power:
->26 dBm P1dB
--Please refer to “Absolute Maximum Stress Ratings” on page 4
-Meets 802.11g OFDM ACPR requirement up to 22 dBm
-~2.5% added EVM up to 19 dBm for 54 Mbps 802.11g signal
-Meets 802.11b ACPR requirement up to 22 dBm
*High power-added efficiency/Low operating current for both 802.11g/b applications
-~22%/220 mA @ POUT = 22 dBm for 802.11g
-~21%/230 mA @ POUT = 22 dBm for 802.11b
*Single-pin low IREF power-up/down control
-IREF <2 mA
*Low idle current
-~70 mA ICQ
*High-speed power-up/down
-Turn on/off time (10%- 90%) <100 ns
-Typical power-up/down delay with driver delay included <200 ns
*High temperature stability
-~1 dB gain/power variation between 0°C to +85°C
*Low shut-down current (< 0.1 μA)
*Excellent On-chip power detection
-<+/- 0.3dB variation between 0°C to +85°C
-<+/- 0.4dB variation with 2:1 VSWR mismatch
-<+/- 0.3dB variation Ch1 through Ch14
*20 dB dynamic range on-chip power detection
*Simple input/output matching

APPLICATIONS
*WLAN (IEEE 802.11g/b)
*Home RF
*Cordless phones
*2.4 GHz ISM wireless equipment
*Packages available
-16-contact VQFN – 3mm x 3mm
*All non-Pb (lead-free) devices are RoHS compliant

SST12LP07-QVCE-K, SST12LP07-QVCE

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Product Description
Sirenza Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications.

Product Features
*High Linearity Performance:
-+21.3 dBm IS-95 Channel Power at -55 dBc ACP
-+48 dBm OIP3 Typ.
*On-chip Active Bias Control
*Patented High Reliability GaAs HBT Technology
*Surface-Mountable Plastic Package

Applications
*PCS Systems
*Multi-Carrier Applications

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Product Description
RFMD’s SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA-1526Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment. It features an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package.

Features
*P1dB=32dBm @ 2140MHz
*ACP=-65dBc with 18.4dBm Channel Power @ 2140MHz
*Low Thermal Resistance Package
*Power Up/Down Control<1μs
*Robust Class 1C ESD

Applications
*Macro/Micro-Cell Driver Stage
*Pico-Cell Output Stage
*GSM, CDMA, TDSCDMA, WCDMA, IS-95
*Single and Multi-Carrier Applications

SPA-1526Z-EVB1, SPA-1526Z-EVB2, SPA-1526Z-EVB3
TAG Amplifier, HBT

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General Description
The HMC616LP3(E) is a GaAs PHEMT MMIC Low Noise Amplifi er that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 175 and 660 MHz. The amplifi er has been optimized to provide 0.5 dB noise fi gure, 24 dB gain and +37 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling components. The HMC616LP3(E) shares the same package and pinout with the HMC617-LP3(E) and HMC618LP3(E) LNAs. The HMC616LP3(E) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application.

Features
*Low Noise Figure: 0.5 dB
*High Gain: 24 dB
*High Output IP3: +37 dBm
*Single Supply: +3V to +5V
*50 Ohm Matched Input/Output
*16 Lead 3x3mm QFN Package: 9 mm2

Typical Applications
The HMC616LP3(E) is ideal for:
*Cellular/3G and LTE/WiMAX/4G
*BTS & Infrastructure
*Repeaters and Femtocells
*Public Safety Radio
*DAB Receivers

HMC616LP3E

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