Description
Peripheral Imaging Corporation's HSN series is family of self-scanning photodiode solid-state linear imaging arrays. These photodiode sensors employ PIC’s proprietary CMOS Image Sensing Technology to integrate the sensors into a single monolithic chip. These sensors are optimally designed for applications in spectroscopy. Accordingly, these sensors contain a linear array of photodiodes with an optimized geometrical aspect ratio (25-μm aperture pitch x 2500-μm aperture width) for helping to maintain mechanical stability in spectroscopic instruments and for providing a large light-capturing ability. The family of sensors consists of photodiode arrays of various lengths, 256, 512, and 1024 pixels.
The HSN photodiode arrays are mounted in 22-pin ceramic side-brazed dual-in-line packages that fit in standard DIP sockets. A diagram of its pinout configuration is seen in Figure 1.

Features
*Selectable saturation charge capacities. 65-pC capacity for wider dynamic range. 25-pC for lower noise readout.
*Wide spectral response (180 – 1000 nm) for UV and IR response.
*NP junction photodiodes with superior resistance to UV damage.
*Low dark current.
*Integration time up to 11 seconds at room te mperature.
*Integration time extended to hours by cooling.
*Anti-blooming circuitry.
*High linearity.
*Low power dissipation (less than 1 mW).
*Geometrical structure for enhanced stability and registration.
*Standard 22-lead dual-in-line IC package.

PI0512HSN, PI1024HSN

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Description
AMI Semiconductor’s WSN series is a family of self-scanning photodiode solid-state linear imaging arrays. These photodiode sensors employ AMI Semiconductor’s proprietary CMOS image sensing technology to integrate the sensors into a single monolithic chip. These sensors are optimally designed for applications in spectroscopy. Accordingly, these sensors contain a linear array of photodiodes with an optimized geometrical aspect ratio (50μm aperture pitch x 2500μm aperture width) for helping to maintain mechanical stability in spectroscopic instruments and for providing a large light-capturing ability. The family of sensors consists of photodiode arrays of various lengths - 128, 256 and 512 pixels.
The WSN photodiode arrays are mounted in 22-pin ceramic side-brazed dual-in-line packages that fit in standard DIP sockets.

Features
*65pC saturation capacity for wide dynamic range
*Wide spectral response (180 – 1000nm) for UV and IR response
*NP junction photodiodes with superior resistance to UV damage
*Low dark current
*Integration time up to nine seconds at room temperature
*Integration time extended to hours by cooling
*High linearity
*Low power dissipation (less than 1mW)
*Geometrical structure for enhanced stability and registration
*Standard 22 lead dual-in-line IC package

AMIS-732256, AMIS-732512

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Description
Peripheral Imaging Corporation's WSN series is family of self-scanning photodiode solid-state linear imaging arrays. These photodiode sensors employ PIC’s proprietary CMOS Image Sensing Technology to integrate the sensors into a single monolithic chip. These sensors are optimally designed for applications in spectroscopy. Accordingly, these sensors contain a linear array of photodiodes with an optimized geometrical aspect ratio (50-mm aperture pitch x 2500-mm aperture width) for helping to maintain mechanical stability in spectroscopic instruments and for providing a large light-capturing ability. The family of sensors consists of photodiode arrays of various lengths, 128, 256, and 512 pixels.
The WSN photodiode arrays are mounted in 22-pin ceramic side-brazed dual-in-line packages that fit in standard DIP sockets. A diagram of its pinout configuration is seen in Figure 1.

Features
*65-pC saturation capacity for wide dynamic range.
*Wide spectral response (180 – 1000 nm) for UV and IR response.
*NP junction photodiodes with superior resistance to UV damage.
*Low dark current.
*Integration time up to 9 seconds at room temperature.
*Integration time extended to hours by cooling.
*High linearity.
*Low power dissipation (less than 1 mW).
*Geometrical structure for enhanced stability and registration.
*Standard 22-lead dual-in-line IC package.

PI0128WSN, PI0256WSN, PI0512WSN

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DESCRIPTION
 DESIGNED for use in general purpose, medium current (to 100mA) switching and differential amplifier applications, the ULN-2083A and ULS-2083H transistor arrays each consist of five NPN transistors on a single monolithic chip.
Two transistors are matched at low currents (1mA) making them ideal for use in balanced mixer circuits, pushpull amplifiers, and other circuit functions requiring close thermal and offset matching.
A separate substrate connection permits maximum circuit design flexibility.
In order to mointain isolation between transistros and provide normal transistor action, the substrate must be connected to a voltage which is more negative than any collector voltage.
The substrate terminal (pin5) should therefore be maintained at either d-c ground or suitably bypassed to a-c ground to avoid undesired coupling between transistors.
Two package configurations are available.
The Type ULN-2083A is supplied in a 16-lead dual inline plastic package for operation over the temperature range of -20˚C to +85˚C.
This package is similar to JEDEC style MO-001AC.
The Type ULS2083H is electrically identical to the ULN-2083A but is supplied in a hermetic dual in-line package for operation over the temperature range of -55˚C to +125˚C.
This package conforms to the dimensional requirements of Military Specification MIL-M-38510 and can meet all of the applicable environmental requirements of Military Standard MIL-STD-883.

ULS-2083H

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Description
The SP725 is an array of SCR/Diode bipolarstructures for ESD and overvoltage protection of sensitive inputs circuits.
The SP725 has 2 protection SCR/Diode device structures per input.
There are a total of 4 available inputs that can be used to protect up to 4 external signal or bus lines.
Overvoltage protection is from the IN (Pins 1 - 4) to V+ or V-.
The SCR structures are dusigned for fast triggering at athreshold of one +VBE diode threshold above V+ (Pin 5,6) or one -VBE diode threshold below V- (Pin 7,8).
From an IN input, a clamp to V+ is activated if a transient pulse causes the input to be increased to a voltage level greater than one VBE above V+.
A similar clamp to V- is activated if a negative pulse, one VBE less than V-, is applied to an IN input.
Refer to Fig 1 and Table 1 for further detaels.
Refer to Application Note AN9304 and AN9612 for furter detail.

Features
* ESD interface per HBM Standards
- IEC 61000-4-2, Direct Discharge...........8kV (Level 4)
- IEC 61000-4-2, Air Discharge..............15kV (Level 4)
- MIL-STD-3015.7.............................................25kV
* Peak Current Capability
- IEC 61000-4-5 8/20 ㎲ Peak Pulse Current.....± 14 A
- Single Transeint Pulse, 100㎲ Pulse Width ......± 8 A
* Designes to Provede Over-Voltage Protection
- Single-Ended Voltage Range to .....................+ 30V
- Differential Voltage Range to...........................±15V
* Fast Switching....................................2ns Risetime
* Low input Leakages..................5 nA at 25˚C Typical
* Low input Capacitance.........................5 ㎊ Typical
* An Array of 4 SCR/Diode Pairs
* Operating Temperature Range...........-40 ˚C to 105 ˚C

Applications
* Microprocessor/Logic
* Data Bus Protection
* Analog Device input Protection
* Voltage Clamp

SP725ABG
SP725ABTG

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ㅁ EIGHTDARLINGTONS WITHCOMMONEMITTERS
ㅁ OUTPUT CURRENT TO 500 mA
ㅁ OUTPUT VOLTAGE TO50 V
ㅁ INTEGRAL SUPPRESSIONDIODES VERSIONS FOR ALL POPULARLOGIC FAMILIES
ㅁ OUTPUT CAN BE PARALLELED INPUTS PINNED OPPOSITE OUTPUTS TO SIMPLIFYBOARDLAYOUT

DESCRIPTION
The ULN2801A-ULN2805Aeach contain eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features a peak load current rating of 600mA (500mA continuous) and can withstand at least50V in the off state. Outputsmaybe paralleled for higher current capability. Five versions are available to simplify interfacing to standard logic families : the ULN2801Ais designed for generalpurpose applicationswith a current limit resistor ; theULN2802Ahas a 10.5kW inputresistor and zenerfor 14-25VPMOS; theULN2803Ahas 2.7kW input resistor for 5V TTL and CMOS ; the ULN2804A has a 10.5kW input resistor for 6-15V CMOS and the ULN2805A is designed to sink minimum of 350mA for standard and Schottky TTL where higher output current is required. All types are supplied in a 18-lead plastic DIP with a copperleadfromandfeaturethe convenientinputopposite-
outputpinout to simplify board layout.

ULN2802A ULN2803A ULN2804A ULN2805A
TAG ARRAYS

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