General Description
Mimix Broadband’s 33.0-40.0 GHz GaAs MMIC transmitter has a small signal conversion gain of 8.0 dB with a 30.0 dB LO/RF isolation. The device has a pair of sub-harmonic mixers configured to form an image reject mixer which requires an LO at 15.5-21.5 GHz. This is followed by a two stage LNA. The image reject mixer reduces the need for unwanted sideband filtering before the power amplifier. The use of the sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features
*Sub-Harmonic Transmitter
*Low DC Power Consumption
*Optional Power Bias
*8.0 dB Conversion Gain
*30 dB LO/RF Isolation
*100% On-Wafer RF and DC Testing
*100% Visual Inspection to MIL-STD-883 Method 2010

XU1001-BD-000V, XU1001-BD-000W, XU1001-BD-EV1

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