General Description
Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for radar applications.

Features
*X-Band 10W Power Amplifier
*21.0 dB Large Signal Gain
*+40.0 dBm Saturated Output Power
*30% Power Added Efficiency
*On-chip Gate Bias Circuit
*100% On-Wafer RF, DC and Output Power Testing
*100% Visual Inspection to MIL-STD-883 Method 2010

XP1006-BD-000V, XP1006-BD-EV1

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