The SPN1443A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

*30V/2.8A,RDS(ON)= 95mΩ@VGS=10V
*30V/2.3A,RDS(ON)= 105mΩ@VGS=4.5V
*30V/1.5A,RDS(ON)= 135mΩ@VGS=2.5V
*Super high density cell design for extremely low RDS (ON)
*Exceptional on-resistance and maximum DC current capability
*SOT-353 ( SC–70 ) package design

*Power Management in Note book
*Portable Equipment
*Battery Powered System
*DC/DC Converter
*Load Switch
*LCD Display inverter


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