DESCRIPTION
The SPC6601 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.

FEATURES
*N-Channel
-30V/2.8A,RDS(ON)= 68mΩ@VGS=10V
-30V/2.3A,RDS(ON)= 78mΩ@VGS=4.5V
-30V/1.5A,RDS(ON)= 108mΩ@VGS=2.5V
*P-Channel
-30V/-2.8A,RDS(ON)=105mΩ@VGS=- 10V
-30V/-2.5A,RDS(ON)=120mΩ@VGS=-4.5V
-30V/-1.5A,RDS(ON)=150mΩ@VGS=-2.5V
*Super high density cell design for extremely low RDS (ON)
*Exceptional on-resistance and maximum DC current capability
*TSOP– 6P package design

APPLICATIONS
*Power Management in Note book
*Portable Equipment
*Battery Powered System
*DC/DC Converter
*Load Switch
*DSC
*LCD Display inverter

SPC6601ST6RG

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