General Description
The S29NS128J, S29NS064J, S29NS032J and S29NS016J are 128 Mbit, 64 Mbit, 32 Mbit and 16 Mbit 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash memory devices, organized as 8,388,608, 4,194,304, 2,097,152 and 1,048,576. words of 16 bits each. These devices use a single VCC of 1.7 to 1.95 V to read, program, and erase the memory array. A 12.0-volt Acc may be used for faster program performance if desired. These devices can also be programmed in standard EPROM programmers.

*Single 1.8 volt read, program and erase (1.7 to 1.95 V)
*Multiplexed Data and Address for reduced I/O count
– A15–A0 multiplexed as DQ15–DQ0
– Addresses are latched by AVD# control input when CE# low
*Simultaneous Read/Write operation
– Data can be continuously read from one bank while executing erase/program functions in other bank
– Zero latency between read and write operations
*Read access times at 54 MHz (CL=30 pF)
– Burst access times of 11/13.5 ns at industrial temperature range
– Asynchronous random access times of 65/70 ns
– Synchronous random access times of 71/87.5 ns
*Burst Modes
– Continuous linear burst
– 8/16/32 word linear burst with wrap around
– 8/16/32 word linear burst without wrap around
*Power dissipation (typical values, 8 bits switching, CL = 30 pF)
– Burst Mode Read: 25 mA
– Simultaneous Operation: 40 mA
– Program/Erase: 15 mA
– Standby mode: 9 μA
*Sector Architecture
– Four 8 Kword sectors
– Two hundred fifty-five (S29NS128J), one hundred twenty-seven (S29NS064J),sixty-three (S29NS032J), or thirty-one (S29NS016J) 32 Kword sectors
– Four banks (see next page for sector count and size)
*Sector Protection
– Software command sector locking
– WP# protects the two highest sectors
– All sectors locked when Acc = VIL
*Handshaking feature
– Provides host system with minimum possible latency by monitoring RDY
*Supports Common Flash Memory Interface (CFI)
*Software command set compatible with JEDEC 42.4 standards
– Backwards compatible with Am29F and Am29LV families
*Manufactured on 110 nm process technology
*Embedded Algorithms
– Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors
– Embedded Program algorithm automatically writes and verifies data at specified addresses
*Data# Polling
– Provides a software method of detecting program and erase operation completion
*Erase Suspend/Resume
– Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation
*Hardware reset input (RESET#)
– Hardware method to reset the device for reading array data
*CMOS compatible inputs and outputs
– 48-ball Very Thin FBGA (S29NS128J)
– 44-ball Very Thin FBGA (S29NS064J, S29NS032J, S29NS016J)
*Cycling Endurance: 1 million cycles per sector typical
*Data Retention: 20 years typical

S29NS128J0LBAW000, S29NS064J0LBAW000, S29NS032J0LBAW000

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