General Description
 The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device.
The device consists of thirty-two sectors, each with 512 Kb memory.
The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output).
The devices are designed to be programmed in-system with the standard system 3.0 volt VCC supply.
The memory can be programmed 1 to 256 bytes at a time, using the Page Program command. The device supports Sector Erase and Bulk Erase commands.
Each device requires only a 3.0 volt power supply (2.7 V to 3.6 V) for both read and write functions.
Internally generated and regulated voltages are provided for the program operations.
This device does not require a VPP supply.

Distinctive Characteristics
* Single power supply operation
– Full voltage range: 2.7 to 3.6 V read and program operations
* Memory Architecture
– Thirty-two sectors with 512 Kb each
* Program
– Page Program (up to 256 bytes) in 1.4 ms (typical)
– Program operations are on a page by page basis
* Erase
– 0.5 s typical sector erase time
– 10 s typical bulk erase time
* Cycling Endurance
– 100,000 cycles per sector typical
* Data Retention
– 20 years typical
* Device ID
– JEDEC standard two-byte electronic signature
– RES command one-byte electronic signature for backward compatibility
* Process Technology
– Manufactured on 0.20 μm MirrorBit® process technology
* Package Option
– Industry Standard Pinouts
– 16-pin SO package (300 mils)
– 8-pin SO package (208 mils)
– 8-Contact WSON Package (6x8 mm), Pb Free Performance Characteristics
* Speed
– 50 MHz clock rate (maximum)
* Power Saving Standby Mode
– Standby Mode 50 μA (max)
– Deep Power Down Mode 1.3 μA (typical) Memory Protection Features
* Memory Protection
– W# pin works in conjunction with Status Register Bits to protect specified memory areas
– Status Register Block Protection bits (BP2, BP1, BP0) in status register configure parts of memory as read-only

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