• Single 5.0 V read, program and erase Minimizes system level power requirements
• Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
• Compatible with JEDEC-standard byte-wide pinouts
- 32-pin PLCC (Package suffix: PD)
- 32-pin TSOP(I) (Package suffix: PF)
- 32-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
• Minimum 100,000 write/erase cycles
• High performance
- 55 ns maximum access time
• Sector erase architecture
- 8 equal size sectors of 64K bytes each
- Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Embedded Erase™ Algorithms
- Automatically pre-programs and erases the chip or any sector
• Embedded Program™ Algorithms
- Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Low VCC write inhibit £ 3.2 V
• Sector protection
- Hardware method disables any combination of sectors from write or erase operations
• Erase Suspend/Resume
- Suspends the erase operation to allow a read data in another sector within the same device

The MBM29F040C is a 4M-bit, 5.0 V-only Flash memory organized as 512K bytes of 8 bits each. The MBM29F040C is offered in a 32-pin PLCC and 32-pin TSOP(I) package. This device is designed to be programmed in-system with the standard system 5.0 V VCC supply. A 12.0 V VPP is not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers.

 The standard MBM29F040C offers access times 55 ns and 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls.
The MBM29F040C is pin and command set compatible with JEDEC standard E2PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0 V Flash or EPROM devices.

 The MBM29F040C is programmed by executing the program command sequence. This will invoke the Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Typically, each sector can be programmed and verified in less than 0.5 seconds. Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin.

 Any individual sector is typically erased and verified in 1 second. (If already completely preprogrammed.) The device also features a sector erase architecture. The sector mode allows for 64K byte sectors of memory to be erased and reprogrammed without affecting other sectors. The MBM29F040C is erased when shipped from the factory.
The device features single 5.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7 or by the Toggle Bit feature on DQ6. Once the end of a program or erase cycle has been completed, the device internally resets to the read mode.

 Fujitsu's Flash technology combines years of EPROM and E2PROM experience to produce the highest levels of quality, reliability and cost effectiveness. The MBM29F040C memory electrically erases the entire chip or all bits within a sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the EPROM programming mechanism of hot electron injection.


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